US2012273927A1PendingUtilityA1

Semiconductor Device and Method of Forming Wafer Level Multi-Row Etched Lead Package

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Assignee: CAMACHO ZIGMUND RPriority: Mar 8, 2010Filed: Jul 6, 2012Published: Nov 1, 2012
Est. expiryMar 8, 2030(~3.6 yrs left)· nominal 20-yr term from priority
Inventors:Zigmund Ramirez CamachoDioscoro A. MeriloHenry Descalzo BathanEmmanuel Espiritu
H10W 74/142H10W 70/682H10W 72/0198H10W 70/099H10W 72/073H10W 72/884H10W 72/874H10W 90/754H10W 72/9413H10W 74/00H10W 90/736H10W 90/734H10W 90/732H10W 72/241H10W 90/00H10W 74/01
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Claims

Abstract

A semiconductor device has a base carrier having first and second opposing surfaces. The first surface of the base carrier is etched to form a plurality of cavities and multiple rows of base leads between the cavities extending between the first and second surfaces. A second conductive layer is formed over the second surface of the base carrier. A semiconductor die is mounted within a cavity of the base carrier. A first insulating layer is formed over the die and first surface of the base carrier and into the cavities. A first conductive layer is formed over the first insulating layer and first surface of the base carrier. A second insulating layer is formed over the first insulating layer and first conductive layer. A portion of the second surface of the base carrier is removed to expose the first insulating layer and electrically isolate the base leads.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device, comprising:
 a base carrier including a plurality of base leads and a cavity in the base carrier disposed between the base leads;   a first semiconductor die mounted within the cavity of the base carrier;   a first insulating layer formed in the cavity around the first semiconductor die and base leads;   a conductive layer formed over the first insulating layer and base leads; and   a second insulating layer formed over the first insulating layer and conductive layer.   
     
     
         2 . The semiconductor device of  claim 1 , wherein a portion of the base carrier is removed to electrically isolate the base leads. 
     
     
         3 . The semiconductor device of  claim 1 , wherein a portion of the base carrier is disposed under the first semiconductor die. 
     
     
         4 . The semiconductor device of  claim 1 , further including a shielding layer formed over the second insulating layer. 
     
     
         5 . The semiconductor device of  claim 1 , further including a second semiconductor die mounted over the first semiconductor die and electrically connected to the first semiconductor die through the base leads. 
     
     
         6 . The semiconductor device of  claim 1 , further including a plurality of the semiconductor devices electrically connected through the conductive layer and base leads. 
     
     
         7 . A semiconductor device, comprising:
 a base carrier including a plurality of base leads and a cavity in the base carrier disposed between the base leads;   a first semiconductor die mounted within the cavity of the base carrier;   a first insulating layer formed in the cavity around the first semiconductor die; and   a conductive layer formed over the first insulating layer and base leads.   
     
     
         8 . The semiconductor device of  claim 7 , further including a second insulating layer formed over the first insulating layer and conductive layer. 
     
     
         9 . The semiconductor device of  claim 8 , further including a shielding layer formed over the second insulating layer. 
     
     
         10 . The semiconductor device of  claim 7 , wherein a portion of the base carrier is removed to electrically isolate the base leads. 
     
     
         11 . The semiconductor device of  claim 7 , wherein a portion of the base carrier is disposed under the first semiconductor die. 
     
     
         12 . The semiconductor device of  claim 7 , further including a second semiconductor die mounted over the first semiconductor die and electrically connected to the first semiconductor die through the base leads. 
     
     
         13 . The semiconductor device of  claim 7 , further including a plurality of the semiconductor devices electrically connected through the conductive layer and base leads. 
     
     
         14 . A semiconductor device, comprising:
 a base carrier including a plurality of base leads and a cavity in the base carrier disposed between the base leads;   a first semiconductor die mounted within the cavity of the base carrier;   a first insulating layer formed in the cavity around the first semiconductor die;   a first conductive layer formed over the first insulating layer and base leads; and   a second conductive layer formed over the base carrier.   
     
     
         15 . The semiconductor device of  claim 14 , further including a second insulating layer formed over the first insulating layer and first conductive layer. 
     
     
         16 . The semiconductor device of  claim 15 , further including a shielding layer formed over the second insulating layer. 
     
     
         17 . The semiconductor device of  claim 14 , wherein a portion of the base carrier is removed to electrically isolate the base leads. 
     
     
         18 . The semiconductor device of  claim 14 , wherein a portion of the base carrier is disposed under the first semiconductor die. 
     
     
         19 . The semiconductor device of  claim 14 , further including a second semiconductor die mounted over the first semiconductor die and electrically connected to the first semiconductor die through the base leads. 
     
     
         20 . The semiconductor device of  claim 14 , further including a plurality of the semiconductor devices electrically connected through the first conductive layer and base leads. 
     
     
         21 . A semiconductor device, comprising:
 a first semiconductor die;   a plurality of base leads disposed around the first semiconductor die;   a first insulating layer formed around the first semiconductor die and base leads;   a conductive layer formed over the first insulating layer and base leads; and   a second insulating layer formed over the first insulating layer and conductive layer.   
     
     
         22 . The semiconductor device of  claim 21 , further including a shielding layer formed over the second insulating layer. 
     
     
         23 . The semiconductor device of  claim 21 , further including a second semiconductor die mounted over the first semiconductor die and electrically connected to the first semiconductor die through the base leads. 
     
     
         24 . The semiconductor device of  claim 21 , further including a plurality of the semiconductor devices electrically connected through the conductive layer and base leads. 
     
     
         25 . The semiconductor device of  claim 21 , further including a plurality of bumps formed over the base leads.

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