Three dimensional structures having improved alignments between layers of microcomponents

Abstract

The invention relates to a method of initiating molecular bonding, comprising bringing one face ( 31 ) of a first wafer ( 30 ) to face one face ( 21 ) of a second wafer ( 20 ) and initiating a point of contact between the two facing faces. The point of contact is initiated by application to one of the two wafers, for example using a bearing element ( 51 ) of a tool ( 50 ), of a mechanical pressure in the range 0.1 MPa to 33.3 MPa.

What is claimed is: 
     
         1 . A composite three-dimensional structure, comprising:
 a first layer;   a first plurality of microcomponents formed on a surface of the first layer;   a second layer having a first surface molecularly bonded to the surface of the first layer on which the first plurality of microcomponents are formed such that the first plurality of microcomponents are buried between the first layer and the second layer; and   a second plurality of microcomponents foamed on an exposed second surface of the first layer, at least some microcomponents of the second plurality of microcomponents corresponding to and generally vertically aligned with at least some microcomponents of the first plurality of microcomponents, wherein offsets between corresponding microcomponents of the first and second pluralities of microcomponents are limited to values less than 200 nm.   
     
     
         2 . The composite three-dimensional structure of  claim 1 , wherein the offsets between corresponding microcomponents of the first and second pluralities of microcomponents are limited to values less than 100 nm. 
     
     
         3 . The composite three-dimensional structure of  claim 1 , wherein the offsets between corresponding microcomponents of the first and second pluralities of microcomponents are limited to values less than 200 nm in a homogenous manner over the entire composite three-dimensional structure. 
     
     
         4 . The composite three-dimensional structure of  claim 1 , wherein the at least some microcomponents of the first plurality of microcomponents comprise image sensors. 
     
     
         5 . The composite three-dimensional structure of  claim 4 , wherein the at least some microcomponents of the second plurality of microcomponents comprise color filters. 
     
     
         6 . The composite three-dimensional structure of  claim 1 , wherein the at least some microcomponents of the second plurality of microcomponents comprise at least one of contact points and interconnections. 
     
     
         7 . The composite three-dimensional structure of  claim 1 , wherein the second layer comprises a wafer. 
     
     
         8 . The composite three-dimensional structure of  claim 7 , wherein the wafer comprises a semiconductor material. 
     
     
         9 . The composite three-dimensional structure of  claim 7 , wherein the wafer has a diameter in a range of from 100 mm to 300 mm. 
     
     
         10 . The composite three-dimensional structure of  claim 1 , wherein the first layer comprises a material selected from the group consisting of silicon, germanium. 
     
     
         11 . The composite three-dimensional structure of  claim 10 , wherein the second layer comprises a material selected from the group consisting of silicon, germanium, glass, quartz, and sapphire. 
     
     
         12 . The composite three-dimensional structure of  claim 1 , wherein at least one of the surface of the first layer and the first surface of the second layer comprises an oxide material. 
     
     
         13 . A three-dimensionally integrated structure, comprising:
 a first layer;   a second layer having a first surface bonded to a surface of the first layer by direct inter-atomic forces between the surface of the first layer and the first surface of the second layer;   a first plurality of microcomponents at a surface of the first layer between the first layer and the second layer; and   a second plurality of microcomponents at an exposed second surface of the first layer, the second plurality of microcomponents aligned with the first plurality of microcomponents, wherein unintended offsets between aligned microcomponents of the first plurality of microcomponents and the second plurality of microcomponents are limited to about 200 nm or less.   
     
     
         14 . The three-dimensionally integrated structure of  claim 13 , wherein the unintended offsets between aligned microcomponents of the first plurality of microcomponents and the second plurality of microcomponents are limited to about 100 nm or less. 
     
     
         15 . The three-dimensionally integrated structure of  claim 13 , wherein the unintended offsets between aligned microcomponents of the first plurality of microcomponents and the second plurality of microcomponents are limited to about 200 nm or less in a homogenous manner across the three-dimensionally integrated structure. 
     
     
         16 . The three-dimensionally integrated structure of  claim 13 , wherein the microcomponents of the first plurality of microcomponents comprise image sensors. 
     
     
         17 . The three-dimensionally integrated structure of  claim 16 , wherein the at least some microcomponents of the second plurality of microcomponents comprise color filters. 
     
     
         18 . The three-dimensionally integrated structure of  claim 13 , wherein the microcomponents of the second plurality of microcomponents comprise at least one of contact points and interconnections. 
     
     
         19 . The three-dimensionally integrated structure of  claim 13 , wherein at least one of the first layer and the second layer comprises a semiconductor material. 
     
     
         20 . The three-dimensionally integrated structure of  claim 13 , wherein at least one of the first layer and the second layer comprises a material selected from the group consisting of silicon, germanium, glass, quartz, and sapphire. 
     
     
         21 . The three-dimensionally integrated structure of  claim 13 , wherein the first layer comprises an SOI structure. 
     
     
         22 . The three-dimensionally integrated structure of  claim 13 , wherein at least one of the surface of the first layer and the first surface of the second layer comprises an oxide material.