Substrate processing apparatus

Abstract

A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube.

What is claimed is: 
     
         1 . A cleaning method, comprising:
 performing a first stage and a second stage at least one cycle, the first stage being a stage wherein a cleaning gas is supplied until a pressure in a reaction chamber becomes 10 Torr or more, with exhaustion from the reaction chamber being completely stopped or the reaction chamber being exhausted at an exhausting rate that does not affect a uniform diffusion of the cleaning gas in the reaction chamber from a predetermined point of time before the cleaning gas is supplied into the reaction chamber to a point of time when several seconds are elapsed after starting of the supply of the cleaning gas into the reaction chamber, and the second stage being a stage wherein an inside of the reaction chamber is exhausted to reduce the pressure in the reaction chamber.   
     
     
         2 . The method according to  claim 1 , wherein
 the first stage and the second stage are repeated at least two cycles.   
     
     
         3 . The method according to  claim 1 , wherein
 in the second stage, the inside of the reaction chamber is exhausted to a base pressure.   
     
     
         4 . A method of manufacturing a semiconductor device, comprising:
 processing a substrate to form a film on the substrate: and   performing a first stage and a second stage at least one cycle, the first stage being a stage wherein a cleaning gas is supplied until a pressure in a reaction chamber becomes 10 Torr or more, with exhaustion from the reaction chamber being completely stopped or the reaction chamber being exhausted at an exhausting rate that does not affect a uniform diffusion of the cleaning gas in the reaction chamber from a predetermined point of time before the cleaning gas is supplied into the reaction chamber to a point of time when several seconds are elapsed after starting of the supply of the cleaning gas into the reaction chamber, and the second stage being a stage wherein an inside of the reaction chamber is exhausted to reduce the pressure in the reaction chamber.   
     
     
         5 . The method according to  claim 4 , wherein
 the first stage and the second stage are repeated at least two cycles.   
     
     
         6 . The method according to  claim 4 , wherein
 in the second stage, the inside of the reaction chamber is exhausted to a base pressure.   
     
     
         7 . A substrate processing apparatus, comprising:
 a gas introduce pipe that includes a flow-rate control valve and that supplies a cleaning gas into a reaction chamber;   a gas exhaust pipe that includes a closing member and that exhausts an inside of the reaction chamber; and   a controller that is configured to control at least the flow-rate control valve and the closing member such that a first stage and a second stage are performed at least one cycle, the first stage being a stage wherein the cleaning gas is supplied until a pressure in the reaction chamber becomes 1.0 Torr or more, with exhaustion from the reaction chamber being completely stopped or the reaction chamber being exhausted at an exhausting rate that does not affect a uniform diffusion of the cleaning gas in the reaction chamber from a predetermined point of time before the cleaning gas is supplied into the reaction chamber to a point of time when several seconds are elapsed after starting of the supply of the cleaning gas into the reaction chamber, and the second stage being a stage wherein the inside of the reaction chamber is exhausted to reduce the pressure in the reaction chamber.   
     
     
         8 . The apparatus according to  claim 7 , wherein
 the controller is configured to control at least the flow-rate control valve and the closing member such that the first stage and the second stage are repeated at least two cycles.   
     
     
         9 . The apparatus according to  claim 7 , wherein
 the controller is configured to control at least the flow-rate control valve and the closing member such that in the second stage, the inside of the reaction tube is exhausted to a base pressure.