US2013143404A1PendingUtilityA1

Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate

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Assignee: IWANO TOMOHIROPriority: Nov 22, 2010Filed: Jan 31, 2013Published: Jun 6, 2013
Est. expiryNov 22, 2030(~4.4 yrs left)· nominal 20-yr term from priority
Inventors:Tomohiro IwanoTakenori NaritaDaisuke Ryuzaki
H10P 95/062H10P 52/402B24B 37/044C09K 13/12B24B 37/00C09K 3/1463C09G 1/02C09K 3/14H10P 52/00H01L 21/30625
55
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Claims

Abstract

The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a) Producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. (b) Producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

Claims

exact text as granted — not AI-modified
1 - 24 . (canceled) 
     
     
         25 . A slurry comprising abrasive grains and water,
 the abrasive grains including a tetravalent metal element hydroxide, and producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %,   the tetravalent metal element hydroxide being produced by mixing at least one tetravalent metal element salt selected from the group consisting of M(SO 4 ) 2 , M(NH 4 ) 2 (NO 3 ) 6  and M(NH 4 ) 4 (SO 4 ) 4  (where M is a metal) and an alkali solution.   
     
     
         26 . The slurry according to  claim 25 , wherein the abrasive grains produce absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %. 
     
     
         27 . The slurry according to  claim 25 , wherein the metal M is cerium. 
     
     
         28 . The slurry according to  claim 25 , wherein an alkali in the alkali solution is an alkali with a pKa in the range of less than 12. 
     
     
         29 . The slurry according to  claim 28 , wherein the alkali is at least one selected from the group consisting of ammonia and imidazole. 
     
     
         30 . A polishing liquid set comprising constituent components of a polishing liquid separately stored as a first liquid and a second liquid, so that the first liquid and the second liquid are mixed to form the polishing liquid,
 wherein the first liquid is the slurry according to  claim 25 , and the second liquid comprises an additive and water.   
     
     
         31 . The polishing liquid set according to  claim 30 , wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers. 
     
     
         32 . The polishing liquid set according to  claim 30 , wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid. 
     
     
         33 . A polishing liquid comprising abrasive grains, an additive and water,
 the abrasive grains including a tetravalent metal element hydroxide, and producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %,   the tetravalent metal element hydroxide being produced by mixing at least one tetravalent metal element salt selected from the group consisting of M(SO 4 ) 2 , M(NH 4 ) 2 (NO 3 ) 6  and M(NH 4 ) 4 (SO 4 ) 4  (where M is a metal) and an alkali solution.   
     
     
         34 . The polishing liquid according to  claim 33 , wherein the abrasive grains produce absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %. 
     
     
         35 . The polishing liquid according to  claim 33 , wherein the metal M is cerium. 
     
     
         36 . The polishing liquid according to  claim 33 , wherein an alkali in the alkali solution is an alkali with a pKa in the range of less than 12. 
     
     
         37 . The polishing liquid according to  claim 36 , wherein the alkali is at least one selected from the group consisting of ammonia and imidazole. 
     
     
         38 . The polishing liquid according to  claim 33 , wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers. 
     
     
         39 . The polishing liquid according to  claim 33 , wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid. 
     
     
         40 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and   a step of polishing at least a portion of the film to be polished while supplying the slurry according to  claim 25  between the abrasive pad and the film to be polished.   
     
     
         41 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad,   a step of mixing the first liquid and the second liquid of the polishing liquid set according to  claim 30  to obtain the polishing liquid, and   a step of polishing at least a portion of the film to be polished while supplying the polishing liquid between the abrasive pad and the film to be polished.   
     
     
         42 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and   a step of polishing at least a portion of the film to be polished while respectively supplying both the first liquid and the second liquid of the polishing liquid set according to  claim 30  between the abrasive pad and the film to be polished.   
     
     
         43 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and   a step of polishing at least a portion of the film to be polished while supplying the polishing liquid according to  claim 33  between the abrasive pad and the film to be polished.   
     
     
         44 . The polishing method according to  claim 40 , wherein the film to be polished includes silicon oxide. 
     
     
         45 . The polishing method according to  claim 41 , wherein the film to be polished includes silicon oxide. 
     
     
         46 . The polishing method according to  claim 42 , wherein the film to be polished includes silicon oxide. 
     
     
         47 . The polishing method according to  claim 43 , wherein the film to be polished includes silicon oxide. 
     
     
         48 . The polishing method according to  claim 40 , wherein a surface of the film to be polished has irregularities. 
     
     
         49 . The polishing method according to  claim 41 , wherein a surface of the film to be polished has irregularities. 
     
     
         50 . The polishing method according to  claim 42 , wherein a surface of the film to be polished has irregularities. 
     
     
         51 . The polishing method according to  claim 43 , wherein a surface of the film to be polished has irregularities. 
     
     
         52 . A slurry comprising abrasive grains and water,
 the abrasive grains including a tetravalent metal element hydroxide, and producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %,   the tetravalent metal element hydroxide being produced by mixing at least one tetravalent metal element salt selected from the group consisting of M(SO 4 ) 2 , M(NH 4 ) 2 (NO 3 ) 6  and M(NH 4 ) 4 (SO 4 ) 4  (where M is a metal) and an alkali solution.   
     
     
         53 . The slurry according to  claim 52 , wherein the abrasive grains produce absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. 
     
     
         54 . The slurry according to  claim 52 , wherein the abrasive grains produce absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %. 
     
     
         55 . The slurry according to  claim 52 , wherein the metal M is cerium. 
     
     
         56 . The slurry according to  claim 52 , wherein an alkali in the alkali solution is an alkali with a pKa in the range of less than 12. 
     
     
         57 . The slurry according to  claim 56 , wherein the alkali is at least one selected from the group consisting of ammonia and imidazole. 
     
     
         58 . A polishing liquid set comprising constituent components of a polishing liquid separately stored as a first liquid and a second liquid, so that the first liquid and the second liquid are mixed to form the polishing liquid,
 wherein the first liquid is the slurry according to  claim 52 , and the second liquid comprises an additive and water.   
     
     
         59 . The polishing liquid set according to  claim 58 , wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers. 
     
     
         60 . The polishing liquid set according to  claim 58 , wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid. 
     
     
         61 . A polishing liquid comprising abrasive grains, an additive and water,
 the abrasive grains including a tetravalent metal element hydroxide, and producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %,   the tetravalent metal element hydroxide being produced by mixing at least one tetravalent metal element salt selected from the group consisting of M(SO 4 ) 2 , M(NH 4 ) 2 (NO 3 ) 6  and M(NH 4 ) 4 (SO 4 ) 4  (where M is a metal) and an alkali solution.   
     
     
         62 . The polishing liquid according to  claim 61 , wherein the abrasive grains produce absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. 
     
     
         63 . The polishing liquid according to  claim 61 , wherein the abrasive grains produce absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %. 
     
     
         64 . The polishing liquid according to  claim 61 , wherein the metal M is cerium. 
     
     
         65 . The polishing liquid according to  claim 61 , wherein an alkali in the alkali solution is an alkali with a pKa in the range of less than 12. 
     
     
         66 . The polishing liquid according to  claim 65 , wherein the alkali is at least one selected from the group consisting of ammonia and imidazole. 
     
     
         67 . The polishing liquid according to  claim 61 , wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers. 
     
     
         68 . The polishing liquid according to  claim 61 , wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid. 
     
     
         69 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and   a step of polishing at least a portion of the film to be polished while supplying the slurry according to  claim 52  between the abrasive pad and the film to be polished.   
     
     
         70 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad,   a step of mixing the first liquid and the second liquid of the polishing liquid set according to  claim 58  to obtain the polishing liquid, and   a step of polishing at least a portion of the film to be polished while supplying the polishing liquid between the abrasive pad and the film to be polished.   
     
     
         71 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and   a step of polishing at least a portion of the film to be polished while respectively supplying both the first liquid and the second liquid of the polishing liquid set according to  claim 58  between the abrasive pad and the film to be polished.   
     
     
         72 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and   a step of polishing at least a portion of the film to be polished while supplying the polishing liquid according to  claim 61  between the abrasive pad and the film to be polished.   
     
     
         73 . The polishing method according to  claim 69 , wherein the film to be polished includes silicon oxide. 
     
     
         74 . The polishing method according to  claim 70 , wherein the film to be polished includes silicon oxide. 
     
     
         75 . The polishing method according to  claim 71 , wherein the film to be polished includes silicon oxide. 
     
     
         76 . The polishing method according to  claim 72 , wherein the film to be polished includes silicon oxide. 
     
     
         77 . The polishing method according to  claim 69 , wherein a surface of the film to be polished has irregularities. 
     
     
         78 . The polishing method according to  claim 70 , wherein a surface of the film to be polished has irregularities. 
     
     
         79 . The polishing method according to  claim 71 , wherein a surface of the film to be polished has irregularities. 
     
     
         80 . The polishing method according to  claim 72 , wherein a surface of the film to be polished has irregularities.

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