US2013217228A1PendingUtilityA1

Method for fabricating semiconductor device

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Assignee: KODERA MASAKOPriority: Feb 21, 2012Filed: Aug 30, 2012Published: Aug 22, 2013
Est. expiryFeb 21, 2032(~5.6 yrs left)· nominal 20-yr term from priority
Inventors:Masako KoderaHiroshi TomitaTakeshi Nishioka
H10P 76/2041H10P 72/0414H10P 70/56H10P 70/20G03F 7/092G03F 7/0002B82Y 40/00B24B 37/042B82Y 10/00
47
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Claims

Abstract

According to one embodiment, a method for fabricating a semiconductor device includes performing a back surface processing to remove at least one of a scratch and a foreign material formed on a back surface of a substrate to be processed, a front surface of the substrate being retained in a non-contact state, contacting the back surface of the substrate to a stage to be retained, and providing a pattern on the front surface of the substrate by using lithography.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for fabricating a semiconductor device, comprising:
 performing a back surface processing to remove at least one of a scratch and a foreign material formed on a back surface of a substrate to be processed, a front surface of the substrate being retained in a non-contact state;   contacting the back surface of the substrate to a stage to be retained; and   providing a pattern on the front surface of the substrate using lithography.   
     
     
         2 . The method of  claim 1 , wherein
 removing the back surface of the substrate by a processing member, polishing the back surface of the substrate by a processing member or spraying a fluid onto the back surface of the substrate to be processed is used in the back surface processing.   
     
     
         3 . The method of  claim 2 , wherein
 a sponge, a non-woven cloth, a foamed polyurethane, a polishing tape or a polishing member is used as a material of the processing member.   
     
     
         4 . The method of  claim 1 , wherein
 a static pressure bearing providing a fluid on the front surface of the substrate is configured to retain the surface of the substrate in the non-contact state.   
     
     
         5 . The method of  claim 4 , wherein
 the fluid is selected one of water, organic solvent, liquid with organic material and high pressure gas, each of the fluid not having a contamination factor.   
     
     
         6 . The method of  claim 2 , wherein
 the back surface processing is sliding the processing member while contacting the processing member to the back surface of the substrate.   
     
     
         7 . The method of  claim 6 , wherein
 the substrate is pressed with a pressure of 100 hPa or more by the processing member in the back surface processing.   
     
     
         8 . The method of  claim 6 , wherein
 the processing member having a diameter smaller than a diameter of the substrate is moved on the back surface of the substrate in the back surface processing.   
     
     
         9 . The method of  claim 1 , further comprising:
 cleaning the back surface of the substrate and successively drying the back surface of the substrate, after the performing the back surface processing and before the providing the pattern on the front surface of the substrate.   
     
     
         10 . The method of  claim 9 , wherein
 the static pressure bearing providing the fluid on the front surface of the substrate is configured to retain the substrate when the performing the back surface processing and the cleaning the back surface of the substrate, and a retainer contacting to a side surface of the substrate is configured to be used to retain the substrate when the drying the back surface of the substrate.   
     
     
         11 . A method for fabricating a semiconductor device, comprising:
 performing a front surface processing to remove at least one of a scratch and a foreign material formed on a front surface of a substrate to be processed where a back surface of the substrate is retained in a non-contact state;   contacting the back surface of the substrate to a stage to be retained; and   providing a pattern on the front surface of the substrate by using imprint lithography.   
     
     
         12 . The method of  claim 11 , wherein
 removing the front surface of the substrate by a processing member, polishing the front surface of the substrate by a processing member or spraying a fluid onto the front surface of the substrate is used in the front surface processing.   
     
     
         13 . The method of  claim 12 , wherein
 a sponge, a non-woven cloth, a foamed polyurethane, a polishing tape or a polishing member is used as a material of the processing member.   
     
     
         14 . The method of  claim 11 , wherein
 a static pressure bearing providing a fluid on the front surface of the substrate is configured to retain the front surface of the substrate as the non-contact state.   
     
     
         15 . The method of  claim 14 , wherein
 the fluid is selected from water, organic solvent, liquid with organic material or high pressure gas, each of the fluid not having a contamination factor.   
     
     
         16 . The method of  claim 12 , wherein
 the front surface processing is sliding the processing member while contacting the processing member to the front surface of the substrate.   
     
     
         17 . The method of  claim 16 , wherein
 the substrate is pressed by a pressure of 100 hPa or more as the front surface processing.   
     
     
         18 . The method of  claim 16 , wherein
 the processing member having a diameter smaller than a diameter of the substrate is moved on the front surface of the substrate in the front surface processing.   
     
     
         19 . The method of  claim 11 , further comprising:
 cleaning the front surface of the substrate and successively drying the front surface of the substrate, after the performing the front surface processing and before the providing the pattern on the front surface of the substrate.   
     
     
         20 . The method of  claim 19 , wherein
 the static pressure bearing providing the fluid on the front surface of the substrate is configured to retain the substrate when the performing the front surface processing and the cleaning the front surface of the substrate, and a retainer contacting to a side surface of the substrate is configured to be used to retain the substrate when the drying the front surface of the substrate.

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