Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate

Abstract

The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a) Producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. (b) Producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

1 - 24 . (canceled) 
     
     
         25 . A slurry comprising abrasive grains and water,
 the abrasive grains including a tetravalent metal element hydroxide, and producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %,   a mean secondary particle size of the abrasive grains being 1-200 nm.   
     
     
         26 . The slurry according to  claim 25 , wherein the abrasive grains produce absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %. 
     
     
         27 . The slurry according to  claim 25 , wherein the tetravalent metal element hydroxide is obtained by mixing a tetravalent metal element salt and an alkali solution. 
     
     
         28 . The slurry according to  claim 25 , wherein the tetravalent metal element is tetravalent cerium. 
     
     
         29 . A polishing liquid set comprising constituent components of a polishing liquid separately stored as a first liquid and a second liquid, so that the first liquid and the second liquid are mixed to form the polishing liquid,
 wherein the first liquid is the slurry according to  claim 25 , and the second liquid comprises an additive and water.   
     
     
         30 . The polishing liquid set according to  claim 29 , wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers. 
     
     
         31 . The polishing liquid set according to  claim 29 , wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid. 
     
     
         32 . A polishing liquid comprising abrasive grains, an additive and water,
 the abrasive grains including a tetravalent metal element hydroxide, and producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %,   a mean secondary particle size of the abrasive grains being 1-200 nm.   
     
     
         33 . The polishing liquid according to  claim 32 , wherein the abrasive grains produce absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %. 
     
     
         34 . The polishing liquid according to  claim 32 , wherein the tetravalent metal element hydroxide is obtained by mixing a tetravalent metal element salt and an alkali solution. 
     
     
         35 . The polishing liquid according to  claim 32 , wherein the tetravalent metal element is tetravalent cerium. 
     
     
         36 . The polishing liquid according to  claim 32 , wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers. 
     
     
         37 . The polishing liquid according to  claim 32 , wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid. 
     
     
         38 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and   a step of polishing at least a portion of the film to be polished while supplying the slurry according to  claim 25  between the abrasive pad and the film to be polished.   
     
     
         39 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad,   a step of mixing the first liquid and the second liquid of the polishing liquid set according to  claim 29  to obtain the polishing liquid, and   a step of polishing at least a portion of the film to be polished while supplying the polishing liquid between the abrasive pad and the film to be polished.   
     
     
         40 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and   a step of polishing at least a portion of the film to be polished while respectively supplying both the first liquid and the second liquid of the polishing liquid set according to  claim 29  between the abrasive pad and the film to be polished.   
     
     
         41 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and   a step of polishing at least a portion of the film to be polished while supplying the polishing liquid according to  claim 32  between the abrasive pad and the film to be polished.   
     
     
         42 . The polishing method according to  claim 38 , wherein the film to be polished includes silicon oxide. 
     
     
         43 . The polishing method according to  claim 39 , wherein the film to be polished includes silicon oxide. 
     
     
         44 . The polishing method according to  claim 40 , wherein the film to be polished includes silicon oxide. 
     
     
         45 . The polishing method according to  claim 41 , wherein the film to be polished includes silicon oxide. 
     
     
         46 . The polishing method according to  claim 38 , wherein a surface of the film to be polished has irregularities. 
     
     
         47 . The polishing method according to  claim 39 , wherein a surface of the film to be polished has irregularities. 
     
     
         48 . The polishing method according to  claim 40 , wherein a surface of the film to be polished has irregularities. 
     
     
         49 . The polishing method according to  claim 41 , wherein a surface of the film to be polished has irregularities. 
     
     
         50 . A slurry comprising abrasive grains and water,
 the abrasive grains including a tetravalent metal element hydroxide, and producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %,   a mean secondary particle size of the abrasive grains being 1-200 nm.   
     
     
         51 . The slurry according to  claim 50 , wherein the abrasive grains produce absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. 
     
     
         52 . The slurry according to  claim 50 , wherein the abrasive grains produce absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %. 
     
     
         53 . The slurry according to  claim 50 , wherein the tetravalent metal element hydroxide is obtained by mixing a tetravalent metal element salt and an alkali solution. 
     
     
         54 . The slurry according to  claim 50 , wherein the tetravalent metal element is tetravalent cerium. 
     
     
         55 . A polishing liquid set comprising constituent components of a polishing liquid separately stored as a first liquid and a second liquid, so that the first liquid and the second liquid are mixed to form the polishing liquid,
 wherein the first liquid is the slurry according to  claim 50 , and the second liquid comprises an additive and water.   
     
     
         56 . The polishing liquid set according to  claim 55 , wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers. 
     
     
         57 . The polishing liquid set according to  claim 55 , wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid. 
     
     
         58 . A polishing liquid comprising abrasive grains, an additive and water,
 the abrasive grains including a tetravalent metal element hydroxide, and producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %,   a mean secondary particle size of the abrasive grains being 1-200 nm.   
     
     
         59 . The polishing liquid according to  claim 58 , wherein the abrasive grains produce absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. 
     
     
         60 . The polishing liquid according to  claim 58 , wherein the abrasive grains produce absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %. 
     
     
         61 . The polishing liquid according to  claim 58 , wherein the tetravalent metal element hydroxide is obtained by mixing a tetravalent metal element salt and an alkali solution. 
     
     
         62 . The polishing liquid according to  claim 58 , wherein the tetravalent metal element is tetravalent cerium. 
     
     
         63 . The polishing liquid according to  claim 58 , wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers. 
     
     
         64 . The polishing liquid according to  claim 58 , wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid. 
     
     
         65 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and   a step of polishing at least a portion of the film to be polished while supplying the slurry according to  claim 50  between the abrasive pad and the film to be polished.   
     
     
         66 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad,   a step of mixing the first liquid and the second liquid of the polishing liquid set according to  claim 55  to obtain the polishing liquid, and   a step of polishing at least a portion of the film to be polished while supplying the polishing liquid between the abrasive pad and the film to be polished.   
     
     
         67 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and   a step of polishing at least a portion of the film to be polished while respectively supplying both the first liquid and the second liquid of the polishing liquid set according to  claim 55  between the abrasive pad and the film to be polished.   
     
     
         68 . A substrate polishing method comprising:
 a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and   a step of polishing at least a portion of the film to be polished while supplying the polishing liquid according to  claim 58  between the abrasive pad and the film to be polished.   
     
     
         69 . The polishing method according to  claim 65 , wherein the film to be polished includes silicon oxide. 
     
     
         70 . The polishing method according to  claim 66 , wherein the film to be polished includes silicon oxide. 
     
     
         71 . The polishing method according to  claim 67 , wherein the film to be polished includes silicon oxide. 
     
     
         72 . The polishing method according to  claim 68 , wherein the film to be polished includes silicon oxide. 
     
     
         73 . The polishing method according to  claim 65 , wherein a surface of the film to be polished has irregularities. 
     
     
         74 . The polishing method according to  claim 66 , wherein a surface of the film to be polished has irregularities. 
     
     
         75 . The polishing method according to  claim 67 , wherein a surface of the film to be polished has irregularities. 
     
     
         76 . The polishing method according to  claim 68 , wherein a surface of the film to be polished has irregularities.