Composition for metal electroplating comprising leveling agent

Abstract

Disclosed is a composition comprising a source of metal ions, one or more suppressing agents and at least one additive comprising a linear or branched, polymeric biguanide compound comprising the structural unit of formula L1 or the corresponding salt thereof, wherein R 1 is independently selected from H or an organic radical having 1-20 carbon atoms; R 2 is an divalent organic radical having 1-20 carbon atoms, optionally comprising 20 polymeric biguanide side branches; and n is an integer of 2 or more.

1 . A composition comprising a source of metal ions, a suppressing agent and an additive comprising (i) a linear or branched polymeric biguanide compound comprising a structural unit of formula L1 
       
         
           
           
               
               
           
         
         wherein 
         R 1  is, independently at each occurrence, an H atom or an organic radical having from 1 to 20 carbon atoms. 
         R 2  is a divalent organic radical having from 1 to 20 carbon atoms, optionally comprising a polymeric biguanide branch. 
         n is an integer of 2 or more. 
         or (ii) a corresponding salt of the polymeric biguanide compound, formed by reacting the biguanide groups with one or more organic or inorganic acids. 
       
     
     
         2 . The composition of  claim 1 , wherein R 1  is, independently at each occurrence, an H atom or a substituted or unsubstituted C 1  to C 10  alkyl radical. 
     
     
         3 . The composition of  claim 1 , wherein R 1  is an H atom. 
     
     
         4 . The composition of  claim 1 , wherein R 2  is a substituted or unsubstituted linear C 2  to C 8  alkanediyl. 
     
     
         5 . The composition of  claim 1 , wherein n is from 2 to 6000. 
     
     
         6 . The composition of  claim 1 , wherein a number average molecular weight M n  of the polymeric biguanide compound, determined by gel permeation chromatography, is greater than 300 g/mol. 
     
     
         7 . The composition according to  claim 1 , wherein the additive is obtained by reacting
 a dicyanamide compound, and   at least one amino compound comprising at least two amino groups which independently of each other are primary or secondary amino groups, with   an inorganic or organic protic acid.   
     
     
         8 . The composition of  claim 7 , wherein the at least one amino compound is an aliphatic or aromatic diamine, triamine, multiamine, or a mixture thereof. 
     
     
         9 . The composition of  claim 7 , wherein the at least one amino compound is a terminal diamine. 
     
     
         10 . The composition of  claim 1 , wherein the metal ions comprise a copper ion. 
     
     
         11 . The composition of  claim 1 , further comprising an accelerating agent. 
     
     
         12 . The composition of  claim 11 , wherein the accelerating agent has a formula M A O 3 S—R A1 —S—R A1 —S—S—R A1′ —SO 3 M A , wherein
 M A  is a hydrogen or an alkali metal, and 
 R A1  and R A1′  are each independently a C1-C8 alkyl group or heteroalkyl group, an aryl group or a heteroaromatic group. 
 
     
     
         13 . The composition of  claim 11 , wherein the accelerating agent is bis-(3-sulfopropyl)-disulfide. 
     
     
         14 . The composition of  claim 1 , further comprising a halide ion. 
     
     
         15 . The composition of  claim 14 , wherein the halide ion is a chloride ion. 
     
     
         16 . A bath comprising the composition of  claim 1 , wherein the bath is suitable for depositing a metal containing layer. 
     
     
         17 . A process for depositing a metal layer on a substrate by
 a) contacting a metal plating bath comprising the composition of  claim 1  with the substrate, and   b) applying a current density to the substrate for a time sufficient to deposit a metal layer onto the substrate.   
     
     
         18 . The process of  claim 17 , wherein the substrate comprises micrometer or nanometer sized features and the deposition fills the micrometer or nanometer sized features. 
     
     
         19 . The process of  claim 18 , wherein the micrometer or nanometer-sized features have (i) a size from 1 to 1000 nm, (ii) an aspect ratio of 4 or more, or both (i) and (ii). 
     
     
         20 . The process of  claim 18 , wherein the micrometer or nanometer-sized features have a size from 1 to 100 nm.