Interconnect with titanium-oxide diffusion barrier

Abstract

An interconnect structure located on a semiconductor substrate within a dielectric material positioned atop the semiconductor substrate is provided having an opening within the dielectric material, the opening includes an electrically conductive material extending from the bottom to the top, and contacting the sidewall; a first layer located on the sidewall of the opening, the first layer is made from a material including titanium oxide or titanium silicon oxide; a second layer located between the first layer and the electrically conductive material, the second layer is made from a material selected from the group TiXO b , TiXSi a O b , XO b , and XSi a O b , X is Mn, Al, Sn, In, or Zr; and a third layer located along a top surface of the electrically conductive material, the third layer is made from a material selected from the group TiXO b , TiXSi a O b , XO b , and XSi a O b , X is Mn, Al, Sn, In, or Zr.

What is claimed is: 
     
         1 . An interconnect structure located on a semiconductor substrate within a dielectric material positioned atop the semiconductor substrate, the interconnect structure comprising:
 an opening within the dielectric material, the opening including a bottom, a top, and a sidewall, wherein the opening comprises an electrically conductive material extending from the bottom to the top, and contacting the sidewall;   a first layer located on the sidewall of the opening, wherein the first layer is made from a material comprising titanium oxide or titanium silicon oxide;   a second layer located between the first layer and the electrically conductive material, wherein the second layer is made from a material selected from the group consisting of TiXO b , TiXSi a O b , XO b , and XSi a O b , wherein X is Mn, Al, Sn, In, or Zr; and   a third layer located along a top surface of the electrically conductive material, wherein the third layer is made from a material selected from the group consisting of TiXO b , TiXSi a O b , XO b , and XSi a O b , wherein X is Mn, Al, Sn, In, or Zr.   
     
     
         2 . The interconnect structure of  claim 1 , further comprising:
 a fourth layer located between the second layer and the electrically conductive material, wherein the fourth layer is made from a material comprising titanium and copper.   
     
     
         3 . The interconnect structure of  claim 1 , further comprising:
 a dielectric capping layer located on a top surface of the dielectric material, and in direct contact with the first layer, the second layer, and the third layer.   
     
     
         4 . The interconnect structure of  claim 1 , further comprising:
 a copper wire located at the bottom of the opening and in direct contact with the conductive material.   
     
     
         5 . An interconnect structure located on a semiconductor substrate within a dielectric material positioned atop the semiconductor substrate, the interconnect structure comprising:
 an opening within the dielectric material, the opening including a bottom, a top, and a sidewall, wherein the opening comprises an electrically conductive material extending from the bottom to the top, and contacting the sidewall;   a first layer located on the sidewall of the opening, wherein the first layer is made from a material comprising titanium oxide or titanium silicon oxide;   a second layer located between the first layer and the electrically conductive material; where in the second layer is made from a material selected from the group consisting of Ta, Co, Ru, TaTi, CoTi, and RuTi; and   a third layer located along a top surface of the electrically conductive material, wherein the third layer is made from a material selected from the group consisting of TiXO b , TiXSi a O b , XO b , and XSi a O b , wherein X is Mn, Al, Sn, In, or Zr.   
     
     
         6 . The interconnect structure of  claim 5 , further comprising:
 a fourth layer located between the first layer and the second layer, wherein the fourth layer is made from a material selected from the group consisting of TiXO b , TiXSi a O b , XO b , and XSi a O b , wherein X is Mn, Al, Sn, In, or Zr.   
     
     
         7 . The structure of  claim 6 , further comprising:
 a fifth layer located between the second layer and the electrically conductive material, wherein the fifth layer is made from a material comprising titanium and copper.   
     
     
         8 . The interconnect structure of  claim 5 , further comprising:
 a dielectric capping layer located on a top surface of the dielectric material, and in direct contact with the first layer, the second layer, and the third layer.   
     
     
         9 . The interconnect structure of  claim 8 , further comprising:
 a copper wire located at the bottom of the opening and in direct contact with the conductive material.