Arrangement for depositing bevel protective film

Abstract

An arrangement for depositing a film at a bevel edge of a substrate in a plasma chamber. The arrangement includes a gas delivery system for supplying gas into the chamber. The arrangement also includes a pair of electrodes including a movable electrode and a stationary electrode, wherein the substrate is disposed on one of the pair of electrodes. The arrangement further includes a gap controller module configured for adjusting an electrode gap between the pair of electrodes to a gap distance configured to prevent plasma formation over a center portion of the substrate. The gap distance is also dimensioned such that a plasma-sustainable condition around the bevel edge of the substrate is formed. The arrangement moreover includes a heater disposed below the substrate and powered by an RE source, wherein the heater is maintained at a chuck temperature conducive for facilitating film deposition on the bevel edge of the substrate.

1 - 20 . (canceled) 
     
     
         21 . An arrangement for depositing a protective film at a bevel edge of a substrate in a plasma chamber, comprising:
 a gas delivery system for supplying gas into said plasma chamber;   a pair of electrodes including a movable electrode and a stationary electrode, wherein said substrate is disposed on one of said movable electrode and said stationary electrode;   a gap controller module configured for adjusting an electrode gap between said pair of electrodes to a gap distance configured to prevent plasma formation over a center portion of said substrate, said gap distance also dimensioned such that a plasma-sustainable condition around said bevel edge of said substrate is created after said adjusting, and a heater disposed below said substrate and powered by an RE source, wherein said heater heats said substrate to a temperature conducive for facilitating film deposition on said bevel edge of said substrate.   
     
     
         22 . The arrangement of  claim 21  wherein said plasma chamber is a capacitively coupled chamber. 
     
     
         23 . The arrangement of  claim 21  further including a feedback control system configured to detect whether plasma is formed over said center portion of said substrate. 
     
     
         24 . The arrangement of  claim 21  further including a first gas flow control configured for supplying gas to an edge area of said substrate. 
     
     
         25 . The arrangement of  claim 24  further including a second gas flow control configured for supplying gas to a central area of said substrate. 
     
     
         26 . The arrangement of  claim 21  wherein said gas interacts with power provided by said RF source to generate plasma. 
     
     
         27 . The arrangement of  claim 21  wherein said center portion is substantially equal to an area on said substrate where features are formed. 
     
     
         28 . The arrangement of  claim 21  wherein said center portion is substantially equal to an area on said substrate where the surface of said substrate is substantially fiat, 
     
     
         29 . The arrangement of  claim 21  wherein said plasma chamber is configured perform localized etching as well as localized deposition. 
     
     
         30 . The arrangement of  claim 21  further including a ceramic component positioned adjacent to said heater, wherein said ceramic component has a dimension that is adjustable to control the exposure of the lower outer edge of said substrate to a plasma. formed around said bevel edge of said substrate. 
     
     
         31 . The arrangement of  claim 21  wherein said movable electrode includes a ceramic cover, wherein dimension of said ceramic cover is adjustable to control the width of said protective film on the upper outer edge of said substrate. 
     
     
         32 . The arrangement of  claim 21  wherein said electrode gap is adjusted by one of a mechanical actuator and a bellows and a belt-type gear. 
     
     
         33 . The arrangement of  claim 21  wherein said protective film is one of a. dielectric film, a conductor film, and an organic film. 
     
     
         34 . The arrangement of  claim 21  further including a set of inductive antennas configured for performing in-situ cleaning of said plasma chamber. 
     
     
         35 . The arrangement of  claim 34  wherein said set of inductive antenna is a set of Transformer-Coupled Plasma (TCP) inductor coils. 
     
     
         36 . An arrangement for depositing a protective film at a bevel edge of a substrate in a plasma chamber, comprising:
 a gas delivery system for supplying gas into said plasma chamber;   a pair of electrodes including a movable electrode and a stationary electrode, wherein said substrate is disposed on one of said pair of electrodes;   a plurality of gas flow controls configured for adjusting flow of said gas into said plasma chamber to a pressure configured to prevent plasma formation over a center portion of said substrate, said pressure also adjusted such that a plasma-sustainable condition around said bevel edge of said substrate is created after said adjusting; and   a heater disposed below said substrate and powered by an RF source, Wherein said heater is maintained at a chuck temperature conducive for facilitating film deposition on said bevel edge of said substrate.   
     
     
         37 . The arrangement of  claim 36  further including a feedback control system configured to detect whether plasma is formed over said center portion of said substrate. 
     
     
         38 . The arrangement of  claim 36  further including a ceramic component positioned adjacent to said heater, wherein said ceramic component has a dimension that is adjustable to control the exposure of the lower outer edge of said substrate to a plasma formed around said bevel edge of said substrate. 
     
     
         39 . The arrangement of  claim 36  further including a set of inductive antenna configured for performing in-situ cleaning of said plasma chamber. 
     
     
         40 . The arrangement of  claim 36  wherein said protective film is one of a dielectric film, a conductor film, and an organic film.