Cleaning liquid for lithography and method for forming wiring

Abstract

A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.

What is claimed is: 
     
         1 . A cleaning liquid for lithography comprising an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. 
     
     
         2 . The cleaning liquid for lithography according to  claim 1 , wherein the silicon compound is an alkoxysilane represented by the following formula (1) or a partial hydrolysis condensate thereof:
   R 1   4-n SiOR 2   n   (1)
   wherein R 1  represents an organic group; R 2  represents an alkyl group having 1 to 4 carbon atoms; and n is an integer of 1 to 4.   
     
     
         3 . The cleaning liquid for lithography according to  claim 1 , wherein the amount of the silicon compound is 5% by mass or less. 
     
     
         4 . The cleaning liquid for lithography according to  claim 1 , wherein the alkali includes a quaternary ammonium hydroxide. 
     
     
         5 . The cleaning liquid for lithography according to  claim 4 , wherein the quaternary ammonium hydroxide is a compound represented by the following general formula (2): 
       
         
           
           
               
               
           
         
       
       wherein R 3  to R 6  each independently represent an alkyl, aryl, aralkyl, or hydroxyalkyl group having 1 to 16 carbon atoms. 
     
     
         6 . The cleaning liquid for lithography according to  claim 4 , wherein the amount of the quaternary ammonium hydroxide is 0.05 to 10% by mass. 
     
     
         7 . The cleaning liquid for lithography according to  claim 4 , wherein the amount of the quaternary ammonium hydroxide is 0.1 to 5% by mass. 
     
     
         8 . The cleaning liquid for lithography according to  claim 1 , wherein the alkali includes an alkanolamine. 
     
     
         9 . The cleaning liquid for lithography according to  claim 8 , wherein the amount of the alkanolamine is 0.05 to 20% by mass. 
     
     
         10 . The cleaning liquid for lithography according to  claim 8 , wherein the amount of the alkanolamine is 0.1 to 10% by mass. 
     
     
         11 . The cleaning liquid for lithography according to  claim 1 , wherein the alkali includes a combination of a quaternary ammonium hydroxide and an inorganic base. 
     
     
         12 . The cleaning liquid for lithography according to  claim 1 , wherein the acid includes hydrofluoric acid. 
     
     
         13 . The cleaning liquid for lithography according to  claim 1 , wherein the amount of the acid is 1 ppm by mass to 10% by mass. 
     
     
         14 . The cleaning liquid for lithography according to  claim 1 , wherein the amount of the acid is 100 ppm by mass to 5% by mass. 
     
     
         15 . The cleaning liquid for lithography according to  claim 1 , wherein the solvent includes an organic solvent or a combination of an organic solvent and water. 
     
     
         16 . The cleaning liquid for lithography according to  claim 1 , wherein the solvent consists of an organic solvent. 
     
     
         17 . The cleaning liquid for lithography according to  claim 1 , wherein the amount of the solvent is 1 to 99.7% by mass. 
     
     
         18 . The cleaning liquid for lithography according to  claim 1 , consisting essentially of the alkali or the acid, the solvent, the silicon compound, optionally an anticorrosive agent, and optionally a surfactant. 
     
     
         19 . The cleaning liquid for lithography according to  claim 1 , which is used for cleaning a semiconductor multilayer laminate including a low dielectric constant layer. 
     
     
         20 . A method for forming a wiring which forms a metallic wiring layer by embedding a metal in an etching space that is formed in a low dielectric constant layer of a semiconductor multilayer laminate, comprising:
 cleaning the semiconductor multilayer laminate using the cleaning liquid for lithography according to  claim 1 , after formation of the etching space.