US2013331004A1PendingUtilityA1

Semiconductor device manufacturing method and chemical mechanical polishing method

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Assignee: JSR CORPPriority: Jun 11, 2012Filed: Jun 11, 2013Published: Dec 12, 2013
Est. expiryJun 11, 2032(~5.9 yrs left)· nominal 20-yr term from priority
Inventors:Gaku MinamihabaAkifumi GawaseHajime EdaYukiteru MatsuiSatoshi KamoNaoki NishiguchiAyako Maekawa
B24B 53/017B24B 53/095B24B 37/26B24B 37/042B24B 37/24
46
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Claims

Abstract

According to one embodiment, a semiconductor device manufacturing method comprises forming a film to be polished on a semiconductor substrate, and performing a CMP method on the film to be polished. The CMP method includes polishing the film to be polished by bringing a surface of the film to be polished into contact with a surface of a polishing pad having a negative Rsk value.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor device manufacturing method comprising:
 forming a film to be polished on a semiconductor substrate; and   performing a CMP method on the film to be polished,   wherein the CMP method includes polishing the film to be polished by bringing a surface of the film to be polished into contact with a surface of a polishing pad having a negative Rsk value.   
     
     
         2 . The method of  claim 1 , wherein the Rsk value is not more than −0.5. 
     
     
         3 . The method of  claim 1 , wherein the Rsk value is not more than −1.0. 
     
     
         4 . The method of  claim 1 , wherein before the polishing the film to be polished, the CMP method further comprises conditioning the polishing pad by bringing a dresser into contact with the surface of the polishing pad while supplying pure water to the surface of the polishing pad. 
     
     
         5 . The method of  claim 4 , wherein a surface temperature of the polishing pad is not less than 23° C. in the conditioning the polishing pad. 
     
     
         6 . The method of  claim 5 , wherein
 the polishing pad is rotated in the conditioning the polishing pad, and   the surface temperature of the polishing pad is an inlet temperature of the polishing pad on an upstream side in a rotating direction with respect to the dresser.   
     
     
         7 . The method of  claim 5 , wherein the surface temperature of the polishing pad is controlled by a supply temperature and supply flow rate of the pure water. 
     
     
         8 . The method of  claim 4 , wherein
 the polishing pad is rotated in the conditioning the polishing pad, and   a rate of rotation of the polishing pad is 10 (inclusive) to 110 (inclusive) rpm.   
     
     
         9 . The method of  claim 4 , wherein
 the dresser is rotated in the conditioning the polishing pad, and   a rate of rotation of the dresser is 10 (inclusive) to 110 (inclusive) rpm.   
     
     
         10 . The method of  claim 4 , wherein a load of the dresser to be brought into contact with the surface of the polishing pad is 50 (inclusive) to 300 (inclusive) hPa. 
     
     
         11 . The method of  claim 1 , wherein the polishing pad contains polyurethane as a main material, and has a Shore D hardness of 50 (inclusive) to 80 (inclusive) and a modulus of elasticity of 200 (inclusive) to 700 (inclusive) MPa. 
     
     
         12 . The method of  claim 1 , wherein the film to be polished is a silicon oxide film to be used as an STI structure. 
     
     
         13 . A chemical mechanical polishing method comprises polishing a film to be polished formed on a substrate by bringing a surface of the film to be polished into contact with a surface of a polishing pad having a negative Rsk value. 
     
     
         14 . The method of  claim 13 , wherein the Rsk value is not more than −0.5. 
     
     
         15 . The method of  claim 13 , wherein the Rsk value is not more than −1.0. 
     
     
         16 . The method of  claim 13 , further comprising, before the polishing the film to be polished, conditioning the polishing pad by bringing a dresser into contact with the surface of the polishing pad while supplying pure water to the surface of the polishing pad. 
     
     
         17 . The method of  claim 16 , wherein a surface temperature of the polishing pad is not less than 23° C. in the conditioning the polishing pad. 
     
     
         18 . The method of  claim 17 , wherein
 the polishing pad is rotated in the conditioning the polishing pad, and   the surface temperature of the polishing pad is an inlet temperature of the polishing pad on an upstream side in a rotating direction with respect to the dresser.   
     
     
         19 . The method of  claim 17 , wherein the surface temperature of the polishing pad is controlled by a supply temperature and supply flow rate of the pure water. 
     
     
         20 . The method of  claim 13 , wherein the polishing pad contains polyurethane as a main material, and has a Shore D hardness of 50 (inclusive) to 80 (inclusive) and a modulus of elasticity of 200 (inclusive) to 700 (inclusive) MPa.

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