Temperature controlled plasma processing chamber component with zone dependent thermal efficiences

Abstract

Components and systems for controlling a process or chamber component temperature as a plasma process is executed by plasma processing apparatus. A first heat transfer fluid channel is disposed in a component subjacent to a working surface disposed within a plasma processing chamber such that a first length of the first channel subjacent to a first temperature zone of the working surface comprises a different heat transfer coefficient, h, or heat transfer area, A, than a second length of the first channel subjacent to a second temperature zone of the working surface. In embodiments, different heat transfer coefficients or heat transfer areas are provided as a function of temperature zone to make more independent the temperature control of the first and second temperature zones.

What is claimed is: 
     
         1 . A plasma processing apparatus, comprising:
 a plasma power source coupled to the process chamber to energize a plasma during processing of a workpiece disposed in the process chamber;   a process chamber including a temperature-controlled component coupled to a heat source or sink by a first heat transfer fluid loop, the first fluid loop passing through first and second lengths of a channel embedded in the temperature-controlled component, wherein the first length is subjacent to a first temperature zone of the component and the second length is subjacent a second temperature zone of the component, wherein the first length comprises a lower heat transfer coefficient and/or heat transfer area than the second length.   
     
     
         2 . The plasma processing apparatus of  claim 1 , wherein the temperature-controlled component is a gas distribution showerhead or a substrate supporting chuck, wherein the first temperature zone comprises an annular portion of the showerhead or chuck surrounding the second temperature zone and wherein the showerhead or chuck is further coupled to a second heat transfer fluid loop, the second fluid loop passing through a third length of a channel embedded in the temperature-controlled component subjacent to the first temperature zone of the component. 
     
     
         3 . The plasma processing apparatus of  claim 2 , wherein the first length has a lower heat transfer coefficient or heat transfer area than both the second and third lengths. 
     
     
         4 . The plasma processing apparatus of  claim 3 , wherein the heat transfer coefficient along the first length is lower than the second length. 
     
     
         5 . The plasma processing apparatus of  claim 3 , wherein the heat transfer area along the first length is lower than the second length. 
     
     
         6 . The plasma processing apparatus of  claim 3 , wherein the first length has a first cross-sectional area larger than a second cross-sectional area of the second length. 
     
     
         7 . A method of controlling a temperature of a working surface in a plasma processing apparatus, comprising:
 flowing a first heat transfer fluid through a first and second length of a first heat transfer fluid channel, wherein the first length is subjacent to an outer temperature zone of the working surface and wherein the second length is subjacent to an inner temperature zone of the working surface, the outer temperature zone forming an annulus about the inner temperature zone;   flowing a second heat transfer fluid through a second heat transfer fluid channel, wherein the second heat transfer fluid channel is subjacent to the outer temperature zone of the working surface; and   modulating a flow rate of the first heat transfer fluid to control the temperature of the inner temperature zone without affecting the temperature of the outer temperature zone.   
     
     
         8 . The method of  claim 7 , further comprising delivering a process gas through the component and conducting a plasma etch process of a workpiece while modulating the flow rate.