Composition for forming a developable bottom antireflective coating

Abstract

The present invention provides a composition for forming a bottom anti-reflective coating, and also provides a photoresist pattern formation method employing that composition. The composition gives a bottom anti-reflective coating used in a lithographic process for manufacturing semiconductor devices, and the coating can be developed with a developing solution for photoresist. The composition contains a solvent, a polymer having a condensed polycyclic aromatic group, and a compound having a maleimide derivative or a maleic anhydride derivative. The composition may further contain a photo acid generator or a crosslinking agent.

1 . A composition for forming a bottom anti-reflective coating, comprising
 a solvent,   a polymer represented by the following formula (1):
   -A m -B n -  (1)
 
   in which   A and B are repeating units represented by the following formulas (A) and (B), respectively:   
       
         
           
           
               
               
           
         
         
           wherein 
           each of R 11  and R 12  is independently hydrogen or an alkyl group; 
           L 11  is a single bond, COO or a straight- or branched chain alkylene containing one or more carbon atoms; 
           Y is a condensed polycyclic aromatic group containing two or more benzene rings; and 
           Z is a group selected from the group consisting of R 3 COOR 4  and R 3 OR 4 , provided that R 3  is a single bond, oxygen or a straight- or branched chain alkylene which may have a fluorine atom and which contains one or more carbon atoms and also provided that R 4  is hydrogen or a substituted or non-substituted hydrocarbon group; each of m and n is a number indicating the polymerization degree provided that m is not less than 10 and n is not less than 0; and, 
           a compound comprising an anhydride represented where the compound is represented by any of the following formulas (2) to (4): is represented by any of the following formulas (2) to (4): 
         
       
       
         
           
           
               
               
           
         
         
           in which each of R 21 , R 22  and R 23  is independently a group selected from the group consisting of hydrogen, alkyl, aryl, halogen atom, alkoxy, nitro, aldehyde, cyano, amido, dialkylamino, sulfonamide, imido, carboxylic acid, carboxylic acid ester, sulfonic acid, sulfonic acid ester, alkylamino, and arylamino; 
         
       
       
         
           
           
               
               
           
         
         
           in which each of R 41  and R 42  is independently a group selected from the group consisting of hydrogen, alkyl, aryl, halogen atom, alkoxy, nitro, aldehyde, cyano, amido, dialkylamino, sulfonamide, imido, carboxylic acid, carboxylic acid ester, sulfonic acid, sulfonic acid ester, alkylamine, and arylamino. 
         
       
     
     
         2 . The composition according to  claim 1 , where Y is a condensed polycyclic aromatic group containing two or more benzene rings provided that one of the benzene rings is replaced with a quinone ring and that the condensed polycyclic aromatic group may optionally have a substituent selected from the group consisting of alkyl, aryl, halogen, alkoxy, nitro, aldehyde, cyano, amido, dialkylamino, sulfonamido, imido, carboxy, carboxylic acid ester, sulfo, sulfonic acid ester, alkylamino, and arylamino. 
     
     
         3 . The composition according to  claim 1 , where the compound is represented by formula (2) 
     
     
         4 . The composition according to  claim 1 , comprising the compound represented by the formula (4). 
     
     
         5 . The composition according to  claim 1 , further comprising a photo acid generator. 
     
     
         6 . The composition according to  claim 1 , further comprising a crosslinking agent. 
     
     
         7 . The composition according to  claim 1 ,
 wherein   each of R 11  and R 12  is independently hydrogen or methyl,   L 11  is COO, and   Z is R 3 COOR 4 , provided that R 3  is a single bond or a straight chain alkylene group having 1 to 6 carbon atoms and that R 4  is hydrogen or a branched chain alkyl group having 1 to 10 carbon atoms.   
     
     
         8 . A bottom anti-reflective coating formed on a substrate the composition of  claim 2  and then heating for forming a bottom anti-reflective coating. 
     
     
         9 . The bottom anti-reflective coating according to  claim 8 , formed by a heat-induced Diels-Alder reaction between the polymer represented by the formula (1) and the compound represented by formula (2). 
     
     
         10 . The bottom anti-reflective coating according to  claim 8 , formed by a heat-induced Diels-Alder reaction between the polymer represented by the formula (1) and the compound represented by formula (4). 
     
     
         11 . A pattern formation method comprising the steps of:
 spreading the composition according to  claim 1  for forming a bottom anti-reflective coating on a semiconductor substrate and then baking, to form a bottom anti-reflective coating;   forming a photoresist layer on the bottom anti-reflective coating;   exposing to light the semiconductor substrate covered with the bottom anti-reflective coating and the photoresist layer; and after the exposure,   developing them by use of a developing solution selected from the group consisting of alkaline developing solution and organic solvent, thereby forming a pattern in the photoresist and the antireflective coating.   
     
     
         12 . The pattern formation method according to  claim 11 , wherein the photoresist layer is a positive-working photoresist, R 4  is hydrogen, and the developing solution is an alkaline aqueous solution. 
     
     
         13 . The pattern formation method according to  claim 11 , wherein the photoresist layer is made of a positive-working photoresist, R 4  is a substituted or non-substituted hydrocarbon group, and the developing solution is an alkaline aqueous solution. 
     
     
         14 . The pattern formation method according to  claim 13 , wherein the composition for forming a bottom anti-reflective coating further contains a photo acid generator. 
     
     
         15 . The pattern formation method according to  claim 11 , wherein the photoresist layer is a negative-working photoresist, R 4  is hydrogen, and the developing solution is an alkaline aqueous solution. 
     
     
         16 . The pattern formation method according to  claim 15 , wherein the composition for forming a bottom anti-reflective coating further contains a photo acid generator. 
     
     
         17 . The pattern formation method according to  claim 15 , wherein the composition for forming a bottom anti-reflective coating further contains a crosslinking agent. 
     
     
         18 . The pattern formation method according to  claim 11 , wherein the photoresist layer is a positive-working photoresist, R 4  is a substituted or non-substituted hydrocarbon group, and the developing solution is an organic solvent. 
     
     
         19 . The pattern formation method according to  claim 18 , wherein the composition for forming a bottom anti-reflective coating further contains a photo acid generator. 
     
     
         20 . The pattern formation method according to  claim 10 , wherein the exposure is carried out by use of light in the wavelength range of 13.5 to 248 nm.