Magnetoresistive element and manufacturing method thereof

Abstract

According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a first magnetic layer having a variable magnetization direction. A first nonmagnetic layer is provided on the first magnetic layer. A second magnetic layer having a fixed magnetization direction is provided on the first nonmagnetic layer. The first magnetic layer, the first nonmagnetic layer and the second magnetic layer are preferredly oriented in a cubical crystal (111) plane.

What is claimed is: 
     
         1 . A magnetoresistive element comprising:
 a first magnetic layer having a variable magnetization direction;   a first nonmagnetic layer provided on the first magnetic layer; and   a second magnetic layer provided on the first nonmagnetic layer and having a fixed magnetization direction,   wherein the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer are preferredly oriented in a cubical crystal (111) plane or a hexagonal crystal (0002) plane.   
     
     
         2 . The magnetoresistive element according to  claim 1 , wherein a material of the first and second magnetic layers is a monometal of Co, a monometal of Ni, an alloy of Co and Fe, an alloy of Co and Ni, an alloy of Fe and Ni, or an alloy of Co, Fe and Ni, when the layers are preferredly oriented in the cubical crystal (111). 
     
     
         3 . The magnetoresistive element according to  claim 1 , wherein a material of the first nonmagnetic layer is a SrTiO 3 , SrFeO 3 , SrFeO 3 , LaAlO 3 , NdCoO 3 , or BN which is of a ZnS structure, when the layers are preferredly oriented in the cubical crystal (111). 
     
     
         4 . The magnetoresistive element according to  claim 1 , wherein a material of the first and second magnetic layers is Co, an alloy of Co and Fe, an alloy of Co and Ni, or an alloy of Co, Fe and Ni, when the layers are preferredly oriented in the hexagonal crystal (0002). 
     
     
         5 . The magnetoresistive element according to  claim 1 , wherein a material of the first nonmagnetic layer is an alloy of B and N, or an alloy of Al and O, when the layers are preferredly oriented in the hexagonal crystal (0002). 
     
     
         6 . A magnetoresistive element comprising:
 a first magnetic layer having a variable magnetization direction;   a first nonmagnetic layer provided on the first magnetic layer; and   a second magnetic layer provided on the first nonmagnetic layer and having a fixed magnetization direction,   wherein each of the first and second magnetic layers includes a highly polarized magnetic material.   
     
     
         7 . The magnetoresistive element according to  claim 6 , wherein the highly polarized magnetic material includes a half-metal. 
     
     
         8 . The magnetoresistive element according to  claim 6 , wherein the half-metal is represented by X 2 YZ or XYZ, wherein X, Y and Z represent different elements. 
     
     
         9 . The magnetoresistive element according to  claim 8 , wherein the X is Co. 
     
     
         10 . The magnetoresistive element according to  claim 8 , wherein the first nonmagnetic layer includes an alloy of Zn and S, an alloy of Ce and O, an alloy of Mg and O, or an alloy of Al and O. 
     
     
         11 . The magnetoresistive element according to  claim 1 , further comprising: an underlying layer, and wherein the first magnetic layer is formed on the underlying layer. 
     
     
         12 . The magnetoresistive element according to  claim 1 , further comprising:
 a second nonmagnetic layer provided on the second magnetic layer; and   a shift cancelling layer provided on the second nonmagnetic layer.   
     
     
         13 . The magnetoresistive element according to  claim 12 , wherein the second magnetic layer is Ru. 
     
     
         14 . A method for manufacturing a magnetoresistive element, comprising:
 forming a first magnetic layer by depositing a magnetic material having a variable magnetization direction;   forming a nonmagnetic layer on the first magnetic layer by depositing a nonmagnetic material; and   forming a second magnetic layer on the nonmagnetic layer by depositing a magnetic material having a fixed magnetization direction,   wherein the first magnetic layer, the nonmagnetic layer, and the second magnetic layer are preferredly oriented in a cubical crystal (111) plane or a hexagonal crystal (0002) plane.   
     
     
         15 . The method according to  claim 14 , wherein the first magnetic layer, the nonmagnetic layer, and the second magnetic layer are formed by a sputtering method. 
     
     
         16 . The method according to  claim 14 , wherein forming the first magnetic layer, the nonmagnetic layer, and the second magnetic layer are performed in a state in which the first magnetic layer, the nonmagnetic layer, and the second magnetic layer are preferredly oriented in the cubical crystal (111) plane or a hexagonal crystal (0002) plane.