Inventor · disambiguated record
Youngmin Eeh
Also filed as: EEH YOUNGMIN
33 granted patents·14 pending applications·275 citations·filing 2013–2024
97Inventor score
Top patents by PatentIndex Score
47 records- 0196US9741928B2Magnetoresistive element and magnetic random access memoryTOSHIBA KK·Filed 2016·Granted Aug 22, 2017·12 cites·13 claims
- 0295US10263178B2Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Apr 16, 2019·15 cites·18 claims
- 0395US10170519B2Magnetoresistive element and memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Jan 1, 2019·12 cites·17 claims
- 0495US10103318B2Magnetoresistive elementTOSHIBA MEMORY CORP·Filed 2016·Granted Oct 16, 2018·14 cites·13 claims
- 0595US9947862B2Magnetoresistive memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Apr 17, 2018·16 cites·21 claims
- 0695US9705076B2Magnetoresistive element and manufacturing method of the sameNAGAMINE MAKOTO·Filed 2014·Granted Jul 11, 2017·14 cites·17 claims
- 0795US9620561B2Magnetoresistive element and manufacturing method thereofNAGASE TOSHIHIKO·Filed 2015·Granted Apr 11, 2017·14 cites·17 claims
- 0895US9293695B2Magnetoresistive element and magnetic random access memoryUEDA KOJI·Filed 2014·Granted Mar 22, 2016·13 cites·17 claims
- 0995US9252357B2Magnetoresistive elementTOSHIBA KK·Filed 2015·Granted Feb 2, 2016·13 cites·18 claims
- 1094US10510950B2Magnetoresistive memory deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Dec 17, 2019·12 cites·7 claims
- 1194US10026891B2Magnetoresistive elementTOSHIBA MEMORY CORP·Filed 2016·Granted Jul 17, 2018·9 cites·17 claims
- 1294US9184374B2Magnetoresistive elementSAWADA KAZUYA·Filed 2013·Granted Nov 10, 2015·15 cites·18 claims
- 1394US8995181B2Magnetoresistive elementWATANABE DAISUKE·Filed 2013·Granted Mar 31, 2015·14 cites·20 claims
- 1493US10090459B2Magnetoresistive elementTOSHIBA MEMORY CORP·Filed 2017·Granted Oct 2, 2018·8 cites·20 claims
- 1593US9991313B2Magnetic memory and manufacturing method of the sameTOSHIBA MEMORY CORP·Filed 2015·Granted Jun 5, 2018·10 cites·16 claims
- 1693US9640584B2Method of manufacturing a magnetoresistive memory deviceNAGAMINE MAKOTO·Filed 2015·Granted May 2, 2017·10 cites·11 claims
- 1793US9461240B2Magnetoresistive memory deviceSAWADA KAZUYA·Filed 2015·Granted Oct 4, 2016·14 cites·18 claims
- 1893US9269890B2Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layerNAKAYAMA MASAHIKO·Filed 2013·Granted Feb 23, 2016·11 cites·5 claims
- 1992US9130143B2Magnetic memory and method for manufacturing the sameNAGASE TOSHIHIKO·Filed 2014·Granted Sep 8, 2015·9 cites·14 claims
- 2091US11201189B2Semiconductor device having rare earth oxide layer and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2018·Granted Dec 14, 2021·4 cites·9 claims
- 2188US9209386B2Magneto-resistive element having a ferromagnetic layer containing boronNAGAMINE MAKOTO·Filed 2014·Granted Dec 8, 2015·9 cites·4 claims
- 2288US9142756B2Tunneling magnetoresistive element having a high MR ratioNAGAMINE MAKOTO·Filed 2014·Granted Sep 22, 2015·9 cites·4 claims
- 2386US9178137B2Magnetoresistive element and magnetic memoryEEH YOUNGMIN·Filed 2013·Granted Nov 3, 2015·8 cites·12 claims
- 2483US10490732B2Magnetic memory device with sidewall layer containing boron and manufacturing method thereofTOSHIBA MEMORY CORP·Filed 2016·Granted Nov 26, 2019·6 cites·5 claims
- 2579US10573802B2Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Feb 25, 2020·1 cites·16 claims
- 2677US10170691B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Jan 1, 2019·2 cites·19 claims
- 2776US10203380B2Electronic deviceSK HYNIX INC·Filed 2017·Granted Feb 12, 2019·1 cites·20 claims
- 2860US12089505B2Magnetic memory deviceKIOXIA CORP·Filed 2021·Granted Sep 10, 2024·0 cites·15 claims
- 2959US10586917B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2018·Granted Mar 10, 2020·0 cites·16 claims
- 3058US2015259788A1Sputtering apparatus and manufacturing method of magnetoresistive elementNAGAMINE MAKOTO·Filed 2014·Application pending·0 cites
- 3157US2024298549A1Magnetic device and magnetic storage deviceKIOXIA CORP·Filed 2024·Application pending·0 cites
- 3257US2014284534A1Magnetoresistive element and manufacturing method thereofNAGASE TOSHIHIKO·Filed 2013·Application pending·0 cites
- 3357US2014284733A1Magnetoresistive elementWATANABE DAISUKE·Filed 2013·Application pending·0 cites
- 3456US2015068887A1Manufacturing method of magnetoresistive element and manufacturing apparatus of the sameNAGAMINE MAKOTO·Filed 2014·Application pending·0 cites
- 3555US12356866B2Magnetic memory deviceKIOXIA CORP·Filed 2021·Granted Jul 8, 2025·0 cites·11 claims
- 3654US10153423B2Electronic deviceSK HYNIX INC·Filed 2017·Granted Dec 11, 2018·0 cites·28 claims
- 3753US12284811B2Magnetic memory deviceKIOXIA CORP·Filed 2021·Granted Apr 22, 2025·0 cites·7 claims
- 3850US12063869B2Magnetic memory deviceKIOXIA CORP·Filed 2021·Granted Aug 13, 2024·0 cites·23 claims
- 3949US2018076262A1Semiconductor device having rare earth oxide layer and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2017·Application pending·0 cites
- 4046US2018205006A1Magnetoresistive memory deviceTOSHIBA MEMORY CORP·Filed 2018·Application pending·0 cites
- 4144US2015069544A1Magneto-resistive elementNAGAMINE MAKOTO·Filed 2014·Application pending·0 cites
- 4242US2016099408A1Manufacturing method for insulating film and manufacturing apparatus for the sameNAGAMINE MAKOTO·Filed 2015·Application pending·0 cites
- 4341US2016130693A1Method of manufacturing magnetoresistive memory device and manufacturing apparatus of the sameSAWADA KAZUYA·Filed 2015·Application pending·0 cites
- 4439US2018269043A1Magnetron sputtering apparatus and film formation method using magnetron sputtering apparatusTOSHIBA MEMORY CORP·Filed 2017·Application pending·0 cites
- 4538US2017263680A1Magnetoresistive memory device and manufacturing method of the sameTOSHIBA KK·Filed 2016·Application pending·0 cites
- 4638US2015069554A1Magnetic memory and method of manufacturing the sameNAKAYAMA MASAHIKO·Filed 2014·Application pending·0 cites
- 4734US2018277745A1Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →