Methods and Systems for Measuring a Characteristic of a Substrate or Preparing a Substrate for Analysis

Abstract

Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

What is claimed is: 
     
         1 . A system configured to prepare a substrate for analysis, comprising:
 a chemical delivery subsystem configured to deliver one or more chemicals to a substrate; and   an electron delivery subsystem configured to deliver an electron beam to the substrate, wherein the one or more chemicals in combination with the electron beam remove a portion of a material on the substrate proximate to a defect.   
     
     
         2 . The system of  claim 1 , wherein the electron delivery subsystem is further configured to measure a characteristic of the defect using the electron beam. 
     
     
         3 . The system of  claim 1 , further comprising an analysis subsystem configured to measure a characteristic of the defect, wherein the analysis subsystem comprises an x-ray analysis system. 
     
     
         4 . A system configured to prepare a substrate for analysis, comprising:
 a chemical delivery subsystem configured to deliver one or more chemicals to a substrate; and   an electron and light delivery subsystem configured to deliver an electron beam to the substrate coaxially with a light beam, wherein the one or more chemicals in combination with the electron beam and the light beam remove a portion of a material on the substrate proximate to a defect.   
     
     
         5 . The system of  claim 4 , wherein the electron and light delivery subsystem comprises a laser configured to generate the light beam. 
     
     
         6 . The system of  claim 4 , wherein the electron and light delivery subsystem comprises an electron column, and wherein the electron column comprises an optical window configured to allow the light beam to enter the electron column. 
     
     
         7 . The system of  claim 4 , wherein the electron and light delivery subsystem comprises a mirror with an aperture formed through the mirror, wherein the electron beam passes through the aperture, and wherein the light beam is reflected from the mirror such that the light beam is coaxial with the electron beam. 
     
     
         8 . The system of  claim 4 , wherein the electron and light delivery subsystem is further configured such that the light beam heats the material. 
     
     
         9 . The system of  claim 4 , wherein the electron and light delivery subsystem is further configured such that the light beam heats a horizontal surface of the material and does not substantially heat a vertical surface of the material. 
     
     
         10 . The system of  claim 4 , wherein the electron and light delivery subsystem is further configured to measure a characteristic of the defect using the electron beam. 
     
     
         11 . The system of  claim 4 , further comprising an analysis subsystem configured to measure a characteristic of the defect, wherein the analysis subsystem comprises an x-ray analysis system.