Encapsulating layer-covered semiconductor element, producing method thereof, and semiconductor device

Abstract

A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board formed with a through hole passing through in a thickness direction and a pressure-sensitive adhesive layer laminated on a surface at one side in the thickness direction of the support board so as to cover the through hole; disposing a semiconductor element on a surface at one side in the thickness direction of the pressure-sensitive adhesive layer in opposed to the through hole in the thickness direction; covering the semiconductor element with an encapsulating layer to produce an encapsulating layer-covered semiconductor element; and inserting a pressing member into the through hole from the other side in the thickness direction to peel the encapsulating layer-covered semiconductor element from the pressure-sensitive adhesive layer.

What is claimed is: 
     
         1 . An encapsulating layer-covered semiconductor element comprising:
 an LED and   a phosphor sheet, wherein   the phosphor sheet is made of a phosphor resin composition containing a curable resin and a phosphor, and   the phosphor sheet is disposed so that at least the side surfaces of the LED are covered.   
     
     
         2 . An encapsulating layer-covered semiconductor element comprising:
 an LED and   an embedding portion, wherein   the embedding portion is made of a phosphor resin composition containing a curable resin and a phosphor, and   the LED is embedded in the embedding portion so that the side surfaces and the upper surface of the LED are covered.   
     
     
         3 . The encapsulating layer-covered semiconductor element according to  claim 2 , further comprising:
 a reflector portion, wherein   the reflector portion is made of a reflecting resin composition containing a resin and a light reflecting component, and   the reflector portion is disposed so that at least the side surfaces of the embedding portion are covered.   
     
     
         4 . An encapsulating layer-covered semiconductor element comprising:
 an LED and   a cover portion, wherein   the cover portion is made of a phosphor resin composition containing a curable resin and a phosphor, and   the cover portion is disposed so that the upper surface of the LED is covered.   
     
     
         5 . The encapsulating layer-covered semiconductor element according to  claim 4 , further comprising a reflector portion, wherein
 the reflector portion is made of a reflecting resin composition containing a resin and a light reflecting component, and   the reflector portion is disposed so that the side surfaces of the cover portion are covered.   
     
     
         6 . A semiconductor device comprising:
 a board,   an LED mounted on the board and   a phosphor sheet, wherein   the phosphor sheet is made of a phosphor resin composition containing a curable resin and a phosphor, and   the phosphor sheet is disposed so that at least the side surfaces of the LED are covered.   
     
     
         7 . The semiconductor device according to  claim 6 , further comprising an encapsulating protective layer, wherein
 the LED and the phosphor sheet are encapsulated in the encapsulating protective layer.   
     
     
         8 . A semiconductor device comprising:
 a board,   an LED mounted on the board and   an embedding portion, wherein   the embedding portion is made of a phosphor resin composition containing a curable resin and a phosphor, and   the LED is embedded in the embedding portion so that the side surfaces and the upper surface of the LED are covered.   
     
     
         9 . The semiconductor device according to  claim 8 , further
 comprising a reflector portion, wherein   the reflector portion is made of a reflecting resin composition containing a resin and a light reflecting component, and   the reflector portion is disposed so that at least the side surfaces of the embedding portion are covered.   
     
     
         10 . The semiconductor device according to  claim 8 , further comprising an encapsulating protective layer, wherein
 the LED and the embedding portion are encapsulated in the encapsulating protective layer.   
     
     
         11 . A semiconductor device comprising:
 a board,   an LED mounted on the board and   a cover portion, wherein   the cover portion is made of a phosphor resin composition containing a curable resin and a phosphor, and   the cover portion is disposed so that the upper surface of the LED is covered.   
     
     
         12 . The semiconductor device according to  claim 11 , further comprising a reflector portion, wherein
 the reflector portion is made of a reflecting resin composition containing a resin and a light reflecting component, and   the reflector portion is disposed so that the side surfaces of the cover portion are covered.   
     
     
         13 . The semiconductor device according to  claim 11 , comprising an encapsulating protective layer, wherein
 the LED and the cover portion are encapsulated in the encapsulating protective layer.