US2015069587A1PendingUtilityA1

Integrated circuit and method of manufacturing the same

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Assignee: NXP BVPriority: Apr 5, 2012Filed: Oct 15, 2014Published: Mar 12, 2015
Est. expiryApr 5, 2032(~5.7 yrs left)· nominal 20-yr term from priority
H10W 72/29H10W 72/9415H10W 72/942H10W 72/9223H10W 72/923H10W 70/656H10W 70/654H10W 70/65H10W 46/607H10W 46/401H10W 72/252H10W 72/255H10P 72/7422H10P 72/74H10W 74/141H10W 99/00H10W 46/00H10W 42/60H10W 42/20H01L 23/60H01L 23/544H01L 23/552
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Claims

Abstract

Presented is an integrated circuit packaged at the wafer level wafer (also referred to as a wafer level chip scale package, WLCSP), and a method of manufacturing the same. The WLCSP comprises a die having an electrically conductive redistribution layer, RDL, formed above the upper surface of the die, the RDL defining a signal routing circuit. The method comprises the steps of: depositing the electrically conductive RDL so as to form an electrically conductive ring surrounding the signal routing circuit; and coating the side and lower surfaces of the die with an electrically conductive shielding material.

Claims

exact text as granted — not AI-modified
1 - 6 . (canceled) 
     
     
         7 . A wafer level chip scale package, WLCSP, comprising a die having an electrically conductive redistribution layer, RDL, formed above the upper surface of the die,
 wherein the electrically conductive RDL defines a signal routing circuit and forms an electrically conductive ring surrounding the signal routing circuit,
 wherein underlying the electrical conductive RDL, etched trenches in the die surround the signal routing circuit, and 
   wherein the side and lower surfaces of the die are coated with an electrically conductive shielding material such that the electrically conductive shielding material contacts at least a portion of the periphery of the conductive ring   
     
     
         8 . The WLCSP of  claim 7 , wherein the electrically conductive shielding material is an electroless metal. 
     
     
         9 . The WLCSP of  claim 8 , wherein the electroless metal is an electroless nickel.

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