Resist pattern-forming method

Abstract

A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

1 - 8 . (canceled) 
     
     
         9 . A resist pattern-forming method comprising:
 applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film, the resist underlayer film-forming composition comprising (A) a polysiloxane;   applying a radiation-sensitive resin composition to the resist underlayer film to form a resist film, the radiation-sensitive resin composition comprising:
 (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid; and 
 (a2) a fluorine-containing polymer, 
   exposing the resist film; and   developing the exposed resist film using a developer that comprises an organic solvent.   
     
     
         10 . The resist pattern forming method according to  claim 9 , wherein the polysiloxane (A) is a hydrolysis-condensation product of at least one silane compound comprising a silane compound shown by a formula (i),
   R A   a SiX 4-a   (I)
   wherein R A  represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, an alkenyl group, an aryl group, or a cyano group; the alkyl group represented by R A  is unsubstituted, or at least one hydrogen atom of the alkyl group represented by R A  is substituted with a glycidyloxy group, an oxetanyl group, an acid anhydride group, or a cyano group; the aryl group represented by R A  is unsubstituted, or at least one hydrogen atom of the aryl group represented by R A  is substituted with a hydroxyl group; X represents a halogen atom or —OR B , wherein R B  represents a monovalent organic group; a is an integer from 0 to 3; in a case where a plurality of R A  are present, each of the plurality of R A  is either identical or different; and in a case where plurality of X are present, each of the plurality of X is either identical or different.   
     
     
         11 . The resist pattern-forming method according to  claim 9 , wherein the resist underlayer film-forming composition further comprises (B) a nitrogen-containing compound. 
     
     
         12 . The resist pattern-forming method according to  claim 9 , wherein the resist underlayer film-forming composition further comprises (C) a photoacid generator. 
     
     
         13 . The resist pattern-forming method according to  claim 9 , wherein the polymer (a1) comprises a structural unit (I) shown by formula (1), 
       
         
           
           
               
               
           
         
         wherein R represents a hydrogen atom or a methyl group; and each of R p1 , R p2 , and R p3  individually represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; or R p1  represents a monovalent hydrocarbon group having 1 to 20 carbon atoms, and R p2  and R p3  bond to each other to form a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms together with a carbon atom bonded to R p2  and R p3 . 
       
     
     
         14 . The resist pattern-forming method according to  claim 9 , wherein the polymer (a2) does not comprise an acid-labile group. 
     
     
         15 . The resist pattern-forming method according to  claim 9 , the resist pattern-forming method being used to form a trench pattern, a hole pattern or both thereof. 
     
     
         16 . The resist pattern-forming method according to  claim 9 ,
 wherein a content of the organic solvent in the developer is 60 mass % or more based on a total amount of the developer.   
     
     
         17 . The resist pattern-forming method according to  claim 9 ,
 wherein a content of the organic solvent in the developer is 80 mass % or more based on a total amount of the developer.   
     
     
         18 . The resist pattern-forming method according to  claim 9 ,
 wherein a content of the organic solvent in the developer is 90 mass % or more based on a total amount of the developer.   
     
     
         19 . The resist pattern-forming method according to  claim 9 , wherein
 the resist underlayer film-forming composition further comprises (B) a nitrogen-containing compound, and (C) a photoacid generator.