Plasma processing apparatus

Abstract

In a plasma processing apparatus, an additional viewing window is disposed between an infrared temperature sensor and a view window, and the additional viewing window is cooled to be retained at room temperature (20° C. to 25° C.), to reduce and to stabilize electromagnetic waves emitted from the viewing window. By correcting the value of the electromagnetic waves, the measurement precision of the temperature monitor is increased and it is possible to measure and to control the dielectric window temperature in a stable state.

1 . A plasma processing apparatus, comprising:
 a processing chamber disposed in a vacuum container;   gas supply means for supplying gas to the processing chamber;   a sample stage which is disposed in the processing chamber and on which a sample to be processed is mounted;   a planar member comprising a dielectric material which is disposed above the processing chamber to cover the processing chamber and through which an electric field supplied to form plasma in the processing chamber passes;   an electric field supply path disposed outside the processing chamber for supplying the electric field to the planar member;   an infrared sensor disposed on the outside the planar member apart therefrom for receiving an infrared ray emitted from the planar member and for thereby detecting temperature of the planar member;   a first window member disposed between the planar member and the infrared sensor; and   a second window member disposed between the planar member and the infrared sensor to be apart from the first window member,   the first and second window members comprising one and the same material, wherein:
 temperature of the second window member is in a predetermined range; and 
 at reception of the infrared ray having passed through the first and second window members, the infrared sensor detects the temperature of the planar member. 
   
     
     
         2 . The plasma processing apparatus according to  claim 1 , wherein the temperature of the planar member is detected by correcting an output obtained from the infrared sensor according to the temperature of the second window member. 
     
     
         3 . The plasma processing apparatus according to  claim 1 , wherein the temperature of the planar member is adjusted according to a condition of processing on the sample. 
     
     
         4 . The plasma processing apparatus according to  claim 2 , wherein the temperature of the planar member is adjusted according to a condition of processing on the sample. 
     
     
         5 . A temperature sensor comprising
 an infrared sensor for receiving an infrared ray emitted from an object for temperature detection, and for thereby detecting the temperature,   a first window member disposed between a planar member and the infrared sensor; and   a second window member disposed between the planar member and the infrared sensor to be apart from the first window member, wherein:
 the first and second window member comprising one and the same material, 
 temperature of the second window member is in a predetermined range; and 
 at reception of an infrared ray having passed through the first and second window member, the infrared sensor detects the temperature of the planar member. 
   
     
     
         6 . The temperature sensor according to  claim 5 , wherein the temperature of the planar member is detected by correcting an output obtained from the infrared sensor according to the temperature of the second window member. 
     
     
         7 . The temperature sensor according to  claim 5 , wherein the temperature of the planar member is adjusted according to a condition of processing on a sample. 
     
     
         8 . The temperature sensor according to  claim 6 , wherein the temperature of the planar member is adjusted according to a condition of processing on a sample.