US2015221610A1PendingUtilityA1

Separating bonded wafers

Assignee: IBMPriority: Jun 3, 2013Filed: Apr 14, 2015Published: Aug 6, 2015
Est. expiryJun 3, 2033(~6.9 yrs left)· nominal 20-yr term from priority
H10P 90/1914H10P 90/18H10P 74/203H10P 74/23H10P 72/0616H10P 72/0428H10P 52/00H10W 99/00H10W 72/071B32B 2457/14B32B 38/1825H01L 24/80H01L 24/98B32B 38/0012Y10T156/1168Y10T156/17
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Claims

Abstract

Separating bonded wafers. A bonded wafer pair is mounted between first and second bonding chucks having flat chuck faces, the first bonding chuck face including adjustable zones capable of movement relative to each other, at least a component of the relative movement is along an axis that is perpendicular to the flat first bonding chuck face. The adjustable zones of the first face are moved relative to each other in a coordinated manner such that a widening gap is formed between the bonding faces of the wafer pair.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method to separate bonded wafers, comprising:
 mounting a bonded wafer pair between first and second bonding chucks having flat chuck faces, the first bonding chuck face comprising a plurality of zones capable of movement relative to each other, at least a component of the relative movement is along an axis that is perpendicular to the flat chuck face of the first bonding; and   moving a plurality of zones of the first bonding chuck face in coordinated relative movement such that a widening gap is formed between the bonding faces of the wafer pair.   
     
     
         2 . A method in accordance with  claim 1 , wherein the coordinated relative movement forms the widening gap along the lengths of all radii of a wafer bonding face from greater radial dimensions inward. 
     
     
         3 . A method in accordance with  claim 1 , wherein the coordinated relative movement forms the widening gap along the length of a diameter of a wafer bonding face from one end of the diameter to the other end. 
     
     
         4 . A method in accordance with  claim 1 , further comprising re-bonding the wafer pair. 
     
     
         5 . A bonding chuck in accordance with  claim 1 , wherein the plurality of zones comprises one or more of: regular shaped zones, irregular shaped zones, and arbitrarily shaped zones. 
     
     
         6 . A bonding chuck in accordance with  claim 5 , wherein the plurality of zones comprises a central elliptical zone and one or more contiguous elliptical annular zones.

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