Substrate Processing Apparatus

Abstract

A substrate processing apparatus includes a process container, a process gas supply system, an exhaust system, and a control unit. The process container has inner and outer reaction tubes and a communication section connecting the insides of the reaction tubes. The inner reaction tube has a flat top inner surface at an upper end that covers at least part of a top surface of a substrate support. The process gas supply system supplies a process gas into the process container, and the exhaust system exhausts the process gas from the process container via the communication section and a space between the reaction tubes. The control unit controls a repeated cycle that includes: supplying the process gas into the process container; confining the process gas in the process container; and exhausting the process gas from the process container via the communication section and the space between the reaction tubes.

What is claimed is: 
     
         1 . A substrate processing apparatus comprising:
 a process container comprising: an outer reaction tube; and an inner reaction tube disposed in the outer reaction tube, the inner reaction tube having a flat top inner surface at an upper end portion thereof covering at least a portion of a top surface of a support arranging and supporting a plurality of substrates in the inner reaction tube and including a communication section connecting an inside of the inner reaction tube to an inside of the outer reaction tube, wherein the communication section is disposed at a region other than a region horizontally encompassing a substrate arrangement region where the plurality of substrates are arranged;   a process gas supply system configured to supply a process gas into the process container;   an exhaust system configured to exhaust the process gas from the process container via the communication section and a space between the inner reaction tube and the outer reaction tube; and   a control unit configured to control the process gas supply system and the exhaust system to form thin films on the plurality of substrates by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying the process gas into the process container and confining the process gas in the process container with the plurality of substrates arranged and supported by the support being accommodated in the process container; (b) maintaining a state where the process gas is confined in the process container; and (c) exhausting the process gas from the process container via the communication section and the space between the inner reaction tube and the outer reaction tube.   
     
     
         2 . The substrate processing apparatus of  claim 1 , wherein the communication section is disposed above or below a portion of the region horizontally encompassing the substrate arrangement region of the inner reaction tube. 
     
     
         3 . The substrate processing apparatus of  claim 1 , wherein the communication section is disposed at one of the upper end portion of the inner reaction tube and a sidewall portion of the inner reaction tube. 
     
     
         4 . The substrate processing apparatus of  claim 1 , wherein the communication section is disposed at a central portion of the upper end portion of the inner reaction tube. 
     
     
         5 . The substrate processing apparatus of  claim 1 , wherein the communication section comprises a plurality of communication portions disposed at the upper end portion of the inner reaction tube. 
     
     
         6 . The substrate processing apparatus of  claim 1 , wherein the support comprises a plate-shaped member disposed at the top surface thereof, and the plate-shaped member faces the communication section. 
     
     
         7 . The substrate processing apparatus of  claim 1 , wherein the support comprises a plate-shaped member disposed at the top surface thereof, and the plate-shaped member covers a surface of an uppermost one of the plurality of substrates supported by the support. 
     
     
         8 . The substrate processing apparatus of  claim 1 , wherein the support comprises a plate-shaped member disposed at the top surface thereof, and the plate-shaped member faces the communication section and a surface of an uppermost one of the plurality of substrates supported by the support. 
     
     
         9 . The substrate processing apparatus of  claim 1 , wherein at least a top inner surface at an upper end portion of the outer reaction tube is flat. 
     
     
         10 . The substrate processing apparatus of  claim 1 , wherein the upper end portion of the inner reaction tube is parallel to an upper end portion of the outer reaction tube. 
     
     
         11 . The substrate processing apparatus of  claim 1 , wherein an upper end portion of the outer reaction tube, the upper end portion of the inner reaction tube and the top surface of the support are parallel to one another. 
     
     
         12 . The substrate processing apparatus of  claim 1 , wherein an upper end portion of the outer reaction tube, the upper end portion of the inner reaction tube, the top surface of the support and surfaces of the plurality of substrates are parallel to one another. 
     
     
         13 . The substrate processing apparatus of  claim 1 , wherein the support arranges and supports a plurality of insulating plates, and the communication section is disposed in a portion of a region horizontally encompassing an insulating plate arrangement region of the inner reaction tube where the plurality of insulating plates are arranged. 
     
     
         14 . The substrate processing apparatus of  claim 1 , further comprising a heater, wherein the control unit is further configured to control the heater to heat an inside of the process container to a thermal decomposition temperature of the process gas while the thin films are formed. 
     
     
         15 . The substrate processing apparatus of  claim 1 , wherein thin films are formed in a non-plasma atmosphere. 
     
     
         16 . A substrate processing apparatus comprising:
 a process container comprising: an outer reaction tube having an upper end portion thicker than a sidewall portion thereof; and an inner reaction tube disposed in the outer reaction tube, the inner reaction tube having a flat top inner surface at an upper end portion thereof covering at least a portion of a top surface of a support arranging and supporting a plurality of substrates in the inner reaction tube and including a communication section connecting an inside of the inner reaction tube to an inside of the outer reaction tube, wherein the communication section is disposed at a region other than a region horizontally encompassing a substrate arrangement region where the plurality of substrates are arranged;   a process gas supply system configured to supply a process gas into the process container;   an exhaust system configured to exhaust the process gas from the process container via the communication section and a space between the inner reaction tube and the outer reaction tube; and   a control unit configured to control the process gas supply system and the exhaust system to form thin films on the plurality of substrates by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying the process gas into the process container and confining the process gas in the process container with the plurality of substrates arranged and supported by the support being accommodated in the process container; (b) maintaining a state where the process gas is confined in the process container; and (c) exhausting the process gas from the process container via the communication section and the space between the inner reaction tube and the outer reaction tube.