Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element

Abstract

A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.

What is claimed is: 
     
         1 . A semiconductor element, wherein the semiconductor element is manufactured by forming a hard mask layer on a to-be-processed substrate, forming a fluorocarbon (CFx: x is a random number) layer patterned into a predetermined shape on the hard mask layer, forming a silicon containing film to cover the formed fluorocarbon layer and the hard mask layer exposed between the fluorocarbon layers, performing an etching to remove the silicon containing film located on the top side of the hard mask layer and on the top side of the fluorocarbon layer while leaving the silicon containing film located on a side wall side of the fluorocarbon layer, performing an etching to remove the fluorocarbon layer located between the side walls, etching the hard mask layer using the remaining silicon containing film as a mask, and etching the to-be-processed substrate using the remaining hard mask layer as a mask. 
     
     
         2 . The semiconductor element of  claim 1 , wherein the silicon containing film includes a SiO 2  film. 
     
     
         3 . The semiconductor element of  claim 1 , wherein the hard mask layer includes a SiN film.