US2015357152A1PendingUtilityA1
Ion implantation system and method
Est. expiryOct 27, 2029(~3.2 yrs left)· nominal 20-yr term from priority
Inventors:Edward E. JonesSharad N. YedaveYing TangBarry Lewis ChambersRobert KaimJoseph D. SweeneyOleg BylPeng Zou
H10P 30/20H01J 37/08H01J 37/3171H01J 2237/006H01J 37/32055H01J 37/32412H01J 37/32449C23C 14/48H01J 2237/022C23C 14/52
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Claims
Abstract
An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B 2 F 4 or other alternatives to BF 3 . Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, equilibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.
Claims
exact text as granted — not AI-modified1 . A dopant gas composition supply for ion implantation of boron, said supply being selected from the group consisting of:
(A) a gas storage and dispensing vessel containing a boron dopant composition comprising B 2 F 4 in mixture with a diluent, reactant, and/or cleaning gas; and (B) a gas supply kit comprising (i) a first gas storage and dispensing vessel containing B 2 F 4 , and (ii) a second gas storage and dispensing vessel containing any one or more of diluent, reactant, and/or cleaning gas.
2 . The dopant gas composition supply of claim 1 , wherein the diluent, reactant, and/or cleaning gas comprises a boron-containing diluent, reactant, and/or cleaning gas.
3 . The dopant gas composition supply of claim 2 , wherein the boron-containing diluent, reactant, and/or cleaning gas comprises at least one of B 2 H 6 , B 5 H 9 , BF 3 , B 3 F 5 , BHF 2 , and BH 2 F.
4 . The dopant gas composition supply of claim 2 , wherein the boron-containing diluent, reactant, and/or cleaning gas comprises at least one of B 2 H 6 , B 5 H 9 , and BF 3 .
5 . The dopant gas composition supply of claim 1 , wherein the diluent gas comprises an inert gas.
6 . The dopant gas composition supply of claim 1 , wherein the diluent gas comprises at least one of Ar, N 2 , Xe, XeF 2 , H 2 , CH 4 , and NH 3 .
7 . The dopant gas composition supply according to claim 1 (A).
8 . The dopant gas composition supply of claim 7 , wherein the gas storage and dispensing vessel contains B 2 F 4 in mixture with a diluent gas.
9 . The dopant gas composition supply of claim 7 , wherein the gas storage and dispensing vessel contains B 2 F 4 in mixture with a reactant gas.
10 . The dopant gas composition supply of claim 7 , wherein the gas storage and dispensing vessel contains B 2 F 4 in mixture with a cleaning gas.
11 . The dopant gas composition supply of claim 7 , wherein the diluent, reactant, and/or cleaning gas comprises a boron-containing diluent, reactant, and/or cleaning gas.
12 . The dopant gas composition supply of claim 11 , wherein the boron-containing diluent, reactant, and/or cleaning gas comprises at least one of B 2 H 6 , B 5 H 9 , BF 3 , B 3 F 5 , BHF 2 , and BH 2 F.
13 . The dopant gas composition supply of claim 7 , wherein the boron-containing diluent, reactant, and/or cleaning gas comprises at least one of B 2 H 6 , B 5 H 9 , and BF 3 .
14 . The dopant gas composition supply of claim 7 , wherein B 2 F 4 is in mixture with a diluent gas.
15 . The dopant gas composition supply of claim 14 , wherein the diluent gas comprises an inert gas.
16 . The dopant gas composition supply of claim 14 , wherein the diluent gas comprises at least one of Ar, N 2 , Xe, XeF 2 , H 2 , CH 4 , and NH 3 .
17 . The dopant gas composition supply according to claim 1 (B).
18 . The dopant gas composition supply of claim 17 , wherein the second gas storage and dispensing vessel contains a diluent gas.
19 . The dopant gas composition supply of claim 17 , wherein the second gas storage and dispensing vessel contains a reactant gas.
20 . The dopant gas composition supply of claim 17 , wherein the second gas storage and dispensing vessel contains a cleaning gas.
21 . The dopant gas composition supply of claim 17 , wherein the second gas storage and dispensing vessel contains a boron-containing diluent, reactant, and/or cleaning gas.
22 . The dopant gas composition supply of claim 21 , wherein the boron-containing diluent, reactant, and/or cleaning gas comprises at least one of B 2 H 6 , B 5 H 9 , BF 3 , B 3 F 5 , BHF 2 , and BH 2 F.
23 . The dopant gas composition supply of claim 21 , wherein the boron-containing diluent, reactant, and/or cleaning gas comprises at least one of B 2 H 6 , B 5 H 9 , and BF 3 .
24 . The dopant gas composition supply of claim 17 , wherein the second gas storage and dispensing vessel contains an inert gas.
25 . The dopant gas composition supply of claim 17 , wherein the second gas storage and dispensing vessel contains at least one of Ar, N 2 , Xe, XeF 2 , H 2 , CH 4 , and NH 3 .
26 . A method for enhancing operation of an ion implantation system, comprising providing for use in the ion implantation system a dopant gas composition supply according to claim 1 .Join the waitlist — get patent alerts
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