Inventor · disambiguated record
Sharad N. Yedave
Also filed as: YEDAVE SHARAD · YEDAVE SHARAD N
24 granted patents·8 pending applications·146 citations·filing 2000–2022
94Inventor score
Top patents by PatentIndex Score
32 records- 0197US8062965B2Isotopically-enriched boron-containing compounds, and methods of making and using sameKAIM ROBERT·Filed 2011·Granted Nov 22, 2011·21 cites·20 claims
- 0293US8598022B2Isotopically-enriched boron-containing compounds, and methods of making and using sameKAIM ROBERT·Filed 2011·Granted Dec 3, 2013·12 cites·31 claims
- 0392US11299802B2Germanium tetraflouride and hydrogen mixtures for an ion implantation systemENTEGRIS INC·Filed 2019·Granted Apr 12, 2022·6 cites·13 claims
- 0492US6607782B1Methods of making and using cubic boron nitride composition, coating and articles made therefromUNIV ARKANSAS·Filed 2000·Granted Aug 19, 2003·45 cites·14 claims
- 0591US8796131B2Ion implantation system and methodJONES EDWARD E·Filed 2010·Granted Aug 5, 2014·18 cites·20 claims
- 0690US11139145B2Ion implantation system with mixture of arc chamber materialsENTEGRIS INC·Filed 2020·Granted Oct 5, 2021·2 cites·20 claims
- 0788US9111860B2Ion implantation system and methodADVANCED TECH MATERIALS·Filed 2014·Granted Aug 18, 2015·6 cites·21 claims
- 0888US8603252B2Cleaning of semiconductor processing systemsDIMEO FRANK·Filed 2007·Granted Dec 10, 2013·21 cites·6 claims
- 0983US10109488B2Phosphorus or arsenic ion implantation utilizing enhanced source techniquesENTEGRIS INC·Filed 2015·Granted Oct 23, 2018·3 cites·19 claims
- 1080US11827973B2Germanium tetraflouride and hydrogen mixtures for an ion implantation systemENTEGRIS INC·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 1180US9960042B2Carbon dopant gas and co-flow for implant beam and source life performance improvementENTEGRIS INC·Filed 2013·Granted May 1, 2018·4 cites·18 claims
- 1280US9142387B2Isotopically-enriched boron-containing compounds, and methods of making and using sameENTEGRIS INC·Filed 2013·Granted Sep 22, 2015·3 cites·11 claims
- 1376US10920087B2Hydrogenated isotopically enriched boront trifluoride dopant source gas compositionENTEGRIS INC·Filed 2017·Granted Feb 16, 2021·1 cites·17 claims
- 1476US8138071B2Isotopically-enriched boron-containing compounds, and methods of making and using sameKAIM ROBERT·Filed 2010·Granted Mar 20, 2012·3 cites·10 claims
- 1574US10622192B2Methods and assemblies using fluorine containing and inert gases for plasma flood gun operationENTEGRIS INC·Filed 2018·Granted Apr 14, 2020·1 cites·18 claims
- 1670US11682540B2Ion implantation system with mixture of arc chamber materialsENTEGRIS INC·Filed 2021·Granted Jun 20, 2023·0 cites·16 claims
- 1763US2022044908A1Fluorinated compositions for ion source performance improvements in nitrogen ion implantationENTEGRIS INC·Filed 2021·Application pending·0 cites
- 1862US11538687B2Fluorine ion implantation system with non-tungsten materials and methods of usingENTEGRIS INC·Filed 2019·Granted Dec 27, 2022·0 cites·19 claims
- 1959US11621148B2Plasma immersion methods for ion implantationENTEGRIS INC·Filed 2020·Granted Apr 4, 2023·0 cites·19 claims
- 2059US11315791B2Fluorine ion implantation method and systemENTEGRIS INC·Filed 2019·Granted Apr 26, 2022·0 cites·16 claims
- 2159US2011259366A1Ion source cleaning in semiconductor processing systemsADVANCED TECH MATERIALS·Filed 2009·Application pending·0 cites
- 2258US9991095B2Ion source cleaning in semiconductor processing systemsSWEENEY JOSEPH D·Filed 2009·Granted Jun 5, 2018·0 cites·7 claims
- 2357US10354877B2Carbon dopant gas and co-flow for implant beam and source life performance improvementENTEGRIS INC·Filed 2018·Granted Jul 16, 2019·0 cites·15 claims
- 2454US11062906B2Silicon implantation in substrates and provision of silicon precursor compositions thereforENTEGRIS INC·Filed 2014·Granted Jul 13, 2021·0 cites·7 claims
- 2554US10892137B2Ion implantation processes and apparatus using galliumENTEGRIS INC·Filed 2019·Granted Jan 12, 2021·0 cites·18 claims
- 2654US9685304B2Isotopically-enriched boron-containing compounds, and methods of making and using sameENTEGRIS INC·Filed 2015·Granted Jun 20, 2017·0 cites·16 claims
- 2753US2019103275A1Phosphorus or arsenic ion implantation utilizing enhanced source techniquesENTEGRIS INC·Filed 2018·Application pending·0 cites
- 2850US2015357152A1Ion implantation system and methodENTEGRIS INC·Filed 2015·Application pending·0 cites
- 2949US2017330726A1Fluorinated compositions for ion source performance improvements in nitrogen ion implantationENTEGRIS INC·Filed 2017·Application pending·0 cites
- 3044US2003022026A1Cubic boron nitride composition, coating and articles made therefrom, methods of making and using said composition, coating and articlesFiled 2002·Application pending·0 cites
- 3144US2003087749A1Cubic boron nitride composition, coating and articles made therefrom, methods of making and using said composition, coating and articlesFiled 2002·Application pending·0 cites
- 3241US2019078696A1Fluid supply packageENTEGRIS INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →