Method and system for treatment of deposition reactor

Abstract

A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

What is claimed is: 
     
         1 . A system for treating as reaction chamber, the system comprising:
 a reactor comprising a reaction chamber;   a metal halide source fluidly coupled to the reactor;   a metal CVD source selected from the group consisting of one or more of organometallic compounds and aluminum CVD compounds fluidly coupled to the reactor;   a treatment reactant source coupled to the reactor; and   a vacuum pump coupled to the reactor.   
     
     
         2 . The system of  claim 1 , further comprising a plasma source, wherein treatment reactant from the treatment reactant source is exposed to the plasma source to form one or more excited treatment reactant species. 
     
     
         3 . The system of  claim 1 , further comprising a thermal excitation source, wherein treatment reactant from the treatment reactant source is exposed to the thermal excitation source to form one or more excited treatment reactant species. 
     
     
         4 . The system of  claim 1 , wherein the treatment reactant source comprises one or more compounds selected from the group of compounds comprising one or more hydrogen atoms and compounds comprising a halogen. 
     
     
         5 . The system of  claim 1 , wherein the treatment reactant source comprises one or more of ammonia, hydrogen, silane, methane, silicon hydrides, boron hydrides, halosilanes, haloboranes, alkenes, alkynes, and hydrazine and its derivatives. 
     
     
         6 . The system of  claim 1 , wherein the treatment reactant source comprises a decomposition product of the CVD source.