Chip and manufacturing method thereof

Abstract

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device has an active surface. The semiconductor device includes at least a connecting element and at least a bump. The connecting element is disposed on the activate surface and has a minimum dimension smaller than 100 microns. The bump is disposed on the connecting element and is electrically connected to the active surface by the connecting element. The bump includes a pillar part disposed on the connecting element and a top part disposed at the top of the pillar part. The pillar part has a first dimension and a second dimension both parallel to the active surface. The first dimension is longer than 1.2 times the second dimension. The top part is composed of solder and will melt under the determined temperature. The pillar part will not melt under a determined temperature.

What is claimed is: 
     
         1 . A column structure extending vertically from a semiconductor device for connecting to a carrier, comprising:
 a pillar part having a first dimension and a second dimension, wherein the first dimension is longer than the second dimension; and   a top part disposed on the pillar part, wherein the pillar part comprises materials that will not melt under a pre-determined temperature and top part comprises materials that will melt under the pre-determined temperature,   wherein the pillar part is formed on a bonding pad having a geometric center, metallization layer connects the bonding pad and the pillar part, and the geometric center of the bonding pad is not aligned vertically with the center of the pillar part.   
     
     
         2 . The column structure according to  claim 1 , wherein the first dimension is the maximum dimension and the second dimension is the minimum dimension. 
     
     
         3 . The column structure according to  claim 1 , wherein the first dimension is perpendicular to the second dimension. 
     
     
         4 . The column structure according to  claim 1 , wherein the first and second dimensions are parallel to a cross-section of the pillar part. 
     
     
         5 . The column structure according to  claim 4 , wherein the cross-section of the pillar part has an elliptical or rectangular shaped structure. 
     
     
         6 . The column structure according to  claim 4 , wherein the cross-section of the pillar part composes of at least two lines, each line having a length and a width. 
     
     
         7 . The column structure according to  claim 6 , wherein the lines extend in different directions. 
     
     
         8 . The column structure according to  claim 6 , wherein the cross-section of the pillar part has a T-shaped structure or an I-shaped structure. 
     
     
         9 . The column structure according to  claim 1 , wherein the pillar part comprises copper (Cu), gold (Au), nickel (Ni) or a combination thereof. 
     
     
         10 . The column structure according to  claim 1 , wherein the top part comprises tin (Sn), silver (Ag), lead (Pb) or a combination thereof. 
     
     
         11 . The column structure according to  claim 1 , wherein the column structure completely covers the bonding pad. 
     
     
         12 . The column structure according to  claim 1 , wherein the column structure is disposed on part of the bonding pad. 
     
     
         13 . A package structure, comprising:
 a semiconductor device having a contacting position;   a carrier having a contact point; and   a column structure comprising a pillar part and a top part, and disposed between the semiconductor device and the carrier, wherein the pillar part is connected to the contacting position and the top part is connected to the contact point, the pillar part comprises materials that will not melt under a pre-determined temperature and top part comprises materials that will melt under the pre-determined temperature,   wherein the pillar part is formed on a bonding pad having a geometric center, a metallization layer connects the bonding pad and the pillar part, and the geometric center of the bonding pad is not aligned vertically with the center of the pillar part.   
     
     
         14 . The package structure according to  claim 13 , wherein the first dimension is the maximum dimension and the second dimension is the minimum dimension. 
     
     
         15 . The package structure according to  claim 13 , wherein the first dimension is perpendicular to the second dimension. 
     
     
         16 . The package structure according to  claim 13 , wherein the first and second dimensions are parallel to a cross-section of the pillar part. 
     
     
         17 . The package structure according to  claim 16 , wherein the cross-section of the pillar part has an elliptical or rectangular shaped structure. 
     
     
         18 . The package structure according to  claim 13 , wherein the column structure completely covers the bonding pad. 
     
     
         19 . The package structure according to  claim 13 , wherein the column structure is disposed on part of the bonding pad. 
     
     
         20 . The package structure according to  claim 13 , wherein a center of the column structure is offset from a center of the bonding pad. 
     
     
         21 . The package structure according to  claim 13 , wherein a center of the bonding pad is offset from a center of the contact point. 
     
     
         22 . The package structure according to  claim 13 , wherein a center of the column structure is offset from a center of the contact point. 
     
     
         23 . The package structure according to  claim 13 , wherein the metallization layer comprises an adhesive layer, a barrier layer or a wetting layer. 
     
     
         24 . The package structure according to  claim 13 , wherein the pillar part comprises copper (Cu), gold (Au), nickel (Ni) or a combination thereof. 
     
     
         25 . The package structure according to  claim 13 , wherein the top part comprises tin (Sn), silver (Ag), lead (Pb) or a combination thereof.