Advanced 4-dimensional signal and device testing using circuit-state recognition

Abstract

The Fast Fourier transform describes functions into different dimensions or coordinates such as Cartesian to spherical. For example, a function could be represented in the domains of time and frequency. The concept of the 3-D FFT has the same form as the mathematical representation of the 2-D FFT utilizing a 1-D FFT. This technique is essentially a spatial filtering operation in which the hologram functions as a matched filter. It has been applied here, to function as 4-D FFT by adding the dimension of time to recognize the presence of a specific electronic circuit and detect the moment when specific voltage levels or signals are present within or acting upon, the circuit or device under test and development. Any dynamic changes in the test object from ideal or recorded conditions, such as by defects in the device under test's circuitry or from prescribed voltage or signal induced operating parameters, will not result in the reconstruction of the desired object wave or holographic image.

1 . A method for testing, developing, and evaluating a device under test, or evaluating the manufacture thereof comprising:
 obtaining digital data for determining, shaping or testing a semiconductor or anisotropic device and materials under test, using the steps:   (a) providing a beam of light from a light source having a first wavelength to which the device under test is transparent, semitransparent, or reflective,   (b) in a first beam instance imposing said beam of light on a test device over a spatial region within said test device substantially greater than said first wavelength, wherein said test device has a first state of refractive indexes;   (c) in a second beam instance imposing said beam of light on said test device over a spatial region within said test device substantially greater than said first wavelength, wherein said test device has a second state of refractive indexes;   (d) wherein said first state of refractive indexes is at a first voltage potential or electromagnetic field state, and wherein said second state of refractive indexes is at a second or subsequent voltage potential or electromagnetic field state different from said first voltage potential or electromagnetic field state;   (e) obtaining, displaying, transmitting, processing, or storing first electric digital data resulting from the interference of said first beam instance within said device under test representative of the voltages within said region or target feature and obtaining second electric digital data resulting from the interference of said second beam instance within said device or target feature under test representative of the voltages within said region, and comparing by electric digital data processing said first and second electric digital data to determine operating characteristics or attributes of devices within said device under test;   (f) calculating a matched spatial filter or a hologram using a Fast Fourier Transform of the target portion or feature using as point reference source at least one of the following, a hypothetical test condition, or a predetermined test characteristic of experimental data, a feature or at specific moment of time or event affecting the device, stored data utilizing the integrated circuit design or layout tools, or specific operating characteristics of the said device under test;   (g) positioning the match spatial filter such that the calculated complex amplitude is relative to the device or condition under test and the photo detector device; and   (h) detecting, displaying, transmitting, processing, or storing at least one of said operating characteristics or events.   
     
     
         2 . The method of  claim 1  wherein providing a hologram or holographic optical element includes shaping a hologram or holographic optical element to generate wavefronts of a desired amplitude and phase distribution for the first optical interference pattern when exposed to the non-invasive illumination. 
     
     
         3 . The method of  claim 1  wherein providing the target portion of the device under test includes providing the target portion as at least one of the following: a metalized layer, an internal structure or surface, and a semiconductor layer. 
     
     
         4 . The method of  claim 1  wherein providing a hologram or holographic optical element includes shaping a hologram or holographic optical element by at least one of the following: by direct recording of a sample image and by computer generation of a hologram or holographic optical element grating pattern. 
     
     
         5 . The method of  claim 1 , wherein the test device comprises at least one of the following: an anisotropic material, an isotropic material, silicon, GaAs, germanium, a conductor, resistor, or a free-metal material semiconductor or free-material which is at least semitransparent, transparent, luminescent, phosphorescent, optically absorptive, refractive, or reflective to the first beam or the second beam. 
     
     
         6 . The method of  claim 1  wherein exposing a hologram or holographic optical element and the target portion with the non-invasive illumination includes producing the first optical interference pattern as one of the following: one dimensional, two dimensional, and three dimensional. 
     
     
         7 . The method of  claim 1  wherein providing the target portion includes providing the target portion as at least one of the following: a surface of the structure, a printed or etched surface, wherein the structure further includes circuitry and the target portion is integrated with the circuitry, a portion of the structure that is on a backside of the structure, a portion of the structure that is adjacent a metalized layer, a portion of the structure that is incorporated into a metalized layer, a portion of the structure that is on a front side of the structure, wherein the structure further has a circuitry layer and the target portion further includes a portion of the structure that is adjacent the circuitry layer, wherein the structure further has a circuitry layer and the target portion is at least partially incorporated into the circuitry layer. 
     
     
         8 . The method of  claim 1 , wherein the matched spatial filter or the calculated hologram is calculated using interference of at least one wavelength of the first and second wavelengths used. 
     
     
         9 . The method of  claim 1 , wherein the coherent light source of the first wavelength and the second wavelength comprise at least one of the following sources, or a combination thereof: an infrared light source or sources, an ultraviolet light source or sources, a long wavelength infrared or thermal coherent light source or sources. 
     
     
         10 . A method for testing, developing, and evaluating a device under test, or evaluating the manufacture thereof comprising:
 obtaining digital data for determining, shaping or testing a semiconductor or anisotropic device and materials under test, using the steps:   (a) providing a beam of light from a light source having a first wavelength to which the device under test is transparent, semitransparent, opaque, or reflective;   (b) imposing said beam of light on a test device over a spatial region within said test device substantially greater than said first wavelength, wherein said test device has at least a first state of birefringence or refraction;   (c) imposing said beam of light on said test device over a spatial region within said test device substantially greater than said first wavelength, wherein said test device has at least a second state of birefringence or refraction;   (d) wherein said first state of birefringence or refraction is at a first voltage potential, and wherein said second state of birefringence or refraction is at a second or subsequent voltage potential or electromagnetic field state different from said first voltage potential or subsequent or electromagnetic field state.   (e) obtaining, displaying, transmitting, processing, or storing first electric digital data resulting from the interference of said first beam instance within said device under test representative of the voltages within said region or target feature and obtaining second electric digital data resulting from the interference of said second beam instance within said device or target feature under test representative of the voltages within said region, and comparing by electric digital data processing said first and second electric digital data to determine operating characteristics or attributes of devices within said device under test;   (f) calculating a matched spatial filter using a Fast Fourier Transform of the target portion or feature using as point reference source at least one of the following, a hypothetical test condition, or a predetermined test characteristic of experimental data, a feature or at specific moment of time or event affecting the device, stored data utilizing the integrated circuit design or layout tools, or specific operating characteristics of the said device under test; and   (g) positioning the match spatial filter such that the calculated complex amplitude is relative to the device or condition under test and the photo detector device.   
     
     
         11 . A method for testing, developing, and evaluating a device under test, or evaluating the manufacture thereof comprising:
 obtaining digital data for determining, shaping or testing a semiconductor or anisotropic device and materials device: under test comprising, using the steps:   (a) providing a coherent beam of light from a light source having a first wavelength to which the device under test is transparent, semitransparent, opaque, or reflective;   (b) imposing said coherent beam of light on a test device over a spatial region within said test device greater than said first wavelength, wherein said test device has a first state;   (c) imposing said beam of light on said test device over a spatial region within said test device greater than said first wavelength, wherein said test device has a second state;   (d) wherein said first state is at a first voltage potential or electromagnetic field state, and wherein said second state is at a second voltage potential or electromagnetic field different from said first voltage potential or electromagnetic field state;   (e) obtaining, displaying, transmitting, processing, or storing first electric digital data resulting from the interference of said first beam instance within said device under test representative of the voltages within said region or target feature and obtaining second electric digital data resulting from the interference of said second beam instance within said device or target feature under test representative of the voltages within said region, and comparing by electric digital data processing said first and second electric digital data to determine operating characteristics or attributes of devices within said device under test;   (f) calculating a matched spatial filter using a Fast Fourier Transform of the target portion or feature using as point reference source at least one of the following, a hypothetical test condition, or a predetermined test characteristic of experimental data, a feature or at specific moment of time or event affecting the device, stored data utilizing the integrated circuit design or layout tools, or specific operating characteristics of the said device under test; and   (g) positioning the match spatial filter such that the calculated complex amplitude is relative to the device or condition under test and the photo detector device.