DOPING OF ZrO2 FOR DRAM APPLICATIONS

Abstract

A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe 2 ) 4 ; Ti(NMeEt) 4 ; Ti(NEt 2 ) 4 ; TiCl 4 ; tBuN=Nb(NEt 2 ) 3 ; tBuN=Nb(NMe 2 ) 3 ; t-BuN=Nb(NEtMe) 3 ; t-AmN=Nb(NEt 2 ) 3 ; t-AmN=Nb(NEtMe) 3 ; t-AmN=Nb(NMe 2 ) 3 ; t-AmN=Nb(OBu-t) 3 ; Nb-13; Nb(NEt 2 ) 4 ; Nb(NEt 2 ) 5 ; Nb(N(CH 3 ) 2 ) 5 ; Nb(OC 2 H 5 ) 5 ; Nb(thd)(OPr-i) 4 ; SiH(OMe) 3 ; SiCl 4 ; Si(NMe 2 ) 4 ; (Me 3 Si) 2 NH; GeR a x (OR b ) 4-x wherein x is from 0 to 4, each R a is independently selected from H or C 1 -C 8 alkyl and each R b is independently selected from C 1 -C 8 alkyl; GeCl 4 ; Ge(NR a 2 ) 4 wherein each R a is independently selected from H and C 1 -C 8 alkyl; and (R b 3 Ge) 2 NH wherein each R b is independently selected from C 1 -C 8 alkyl; bis(N,N′-diisopropyl- 1,3 -propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices.

What is claimed is: 
     
         1 . A niobium precursor, comprising a metalorganic niobium precursor selected from the group consisting of:
 t-BuN=Nb(NEt 2 ) 3      t-BuN=Nb(NEtMe) 3      t-AmN=Nb(NEt 2 ) 3      t-AmN=Nb(NEtMe) 3      t-AmN=Nb(NMe 2 ) 3      t-AmN=Nb(OBu-t) 3 .   
     
     
         2 . The niobium precursor of  claim 1 , comprising t-BuN=Nb(NEt 2 ) 3 . 
     
     
         3 . The niobium precursor of  claim 1 , comprising t-BuN=Nb(NEtMe) 3 . 
     
     
         4 . The niobium precursor of  claim 1 , comprising t-AmN=Nb(NEt 2 ) 3 . 
     
     
         5 . The niobium precursor of  claim 1 , comprising t-AmN=Nb(NEtMe) 3 . 
     
     
         6 . The niobium precursor of  claim 1 , comprising t-AmN=Nb(NMe 2 ) 3 . 
     
     
         7 . The niobium precursor of  claim 1 , comprising t-AmN=Nb(OBu-t) 3 . 
     
     
         8 . A chemical cocktail composition, comprising the niobium precursor of  claim 1 , and a zirconium precursor. 
     
     
         9 . The chemical cocktail composition of  claim 8 , wherein the niobium precursor has a concentration that in vapor deposition of the composition yields a zirconium-containing film in which niobium concentration does not exceed 10 atomic percent. 
     
     
         10 . The chemical cocktail composition of  claim 8 , wherein the zirconium precursor comprises a metalorganic zirconium precursor selected from the group consisting of Zr(OiPr) 2 (thd) 2 , Zr(OtBu) 4 , Zr(thd) 4 , and C 1 -C 12  alkoxy zirconium beta-diketonates. 
     
     
         11 . The chemical cocktail composition of  claim 8 , wherein the niobium precursor comprises t-BuN=Nb(NEt 2 ) 3 . 
     
     
         12 . The chemical cocktail composition of  claim 8 , wherein the niobium precursor comprises t-BuN=Nb(NEtMe) 3 . 
     
     
         13 . The chemical cocktail composition of  claim 8 , wherein the niobium precursor comprises t-AmN=Nb(NEt 2 ) 3 . 
     
     
         14 . The chemical cocktail composition of  claim 8 , wherein the niobium precursor comprises t-AmN=Nb(NEtMe) 3 . 
     
     
         15 . The chemical cocktail composition of  claim 8 , wherein the niobium precursor comprises t-AmN=Nb(NMe 2 ) 3 . 
     
     
         16 . The chemical cocktail composition of  claim 8 , wherein the niobium precursor comprises t-AmN=Nb(OBu-t) 3 . 
     
     
         17 . The chemical cocktail composition of  claim 8 , contained in a vapor deposition apparatus. 
     
     
         18 . A method of making a device comprising a niobium or niobium-containing film, comprising depositing the niobium or niobium-containing film on a substrate for said device, by vapor deposition from a precursor composition vapor formed by volatilization of a niobium precursor according to  claim 1 . 
     
     
         19 . The method of  claim 18 , wherein the device comprising a niobium or niobium-containing film comprises a device selected from the group consisting of niobium Josephson junction devices, niobium-containing superconductor devices or materials, niobium oxide capacitors, niobium nitride Josephson devices, niobium carbide contacts for nanotube device applications, and niobium oxide (poly[2-methoxy, 5-(2-ethylhexoxy)-1,4-phenylene vinylene]) hybrid solar cells. 
     
     
         20 . The method of  claim 18 , wherein the vapor deposition comprises chemical vapor deposition or atomic layer deposition. 
     
     
         21 . A method of forming a niobium or niobium-containing film on a substrate, comprising contacting the substrate with a precursor vapor of a precursor selected from the group consisting of:
 t-BuN=Nb(NEt 2 )  3      t-BuN=Nb(NEtMe) 3      t-AmN=Nb(NEt 2 ) 3      t-AmN=Nb(NEtMe) 3      t-AmN=Nb(NMe  2 ) 3      t-AmN=Nb(OBu-t) 3 .   
     
     
         22 . The method of  claim 21 , wherein said contacting is conducted in a chemical vapor deposition process. 
     
     
         23 . The method of  claim 21 , wherein said contacting is conducted in an atomic layer deposition process. 
     
     
         24 . The method of  claim 21 , as carried out in fabrication of a dynamic random access memory device.