US2017186597A1PendingUtilityA1

Vapor deposition of silicon-containing films using penta-substituted disilanes

50
Assignee: L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudePriority: Dec 28, 2015Filed: Mar 15, 2017Published: Jun 29, 2017
Est. expiryDec 28, 2035(~9.5 yrs left)· nominal 20-yr term from priority
Inventors:Jean-Marc GirardChanghee KoIvan OshchepkovKazutaka YanagitaShingo OkuboNaoto NodaJulien Gatineau
H10P 14/69433H10P 14/69215H10P 14/6905H10P 14/6682H10P 14/6681H10P 14/6338H10P 14/6336H10P 14/6334H10P 14/6316H10P 14/6308H10P 14/3411H10P 14/3408H10P 14/416H10P 14/24H10P 14/6339C23C 16/325C23C 16/36C23C 16/24C23C 16/45553C23C 16/402C23C 16/345H01L 21/0228H01L 21/0217H01L 21/02532H01L 21/02236H01L 21/0262H01L 21/02247H01L 21/02529H01L 21/02164
50
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Claims

exact text as granted — not AI-modified
We claim: 
     
         1 . A thermal ALD method of depositing a silicon oxide film on a substrate, the method comprising:
 a) setting a reactor containing the substrate to a temperature ranging from approximately 500° C. to approximately 700° C. and a pressure ranging from approximately 0.1 to approximately 10 Torr (13 Pa to 1,333 Pa);   b) introducing a vapor of pentachlorodisilane into the reaction chamber to form a silicon-containing layer on the substrate;   c) reacting an oxidizing gas with the silicon-containing layer to form a layer of the silicon oxide film having a thickness ranging from approximately 0.4 Å (0.04 nm) to approximately 1.5 Å (0.15 nm);   d) repeating steps b) and c).   
     
     
         2 . The method of  claim 1 , wherein the oxidizing gas is a mixture of ozone and oxygen. 
     
     
         3 . The method of  claim 2 , wherein the mixture comprises at least 5% v/v ozone. 
     
     
         4 . The method of  claim 3 , wherein the oxidizing gas is 7.2% v/v O 3 /O 2 . 
     
     
         5 . The method of  claim 1 , wherein the substrate comprises structures having an aspect ratio ranging from approximately 10 to approximately 40, further comprising obtaining approximately 80% to approximately 100% step coverage of the hole. 
     
     
         6 . The method of  claim 1 , wherein the silicon oxide film is deposited without using plasma. 
     
     
         7 . The method of  claim 1 , wherein the pressure ranges from approximately 0.75 to approximately 1.25 Torr (100 Pa to 167 Pa). 
     
     
         8 . The method of  claim 1 , wherein the silicon oxide film has a thickness ranging from approximately 0.75 Å (0.075 nm) to approximately 1 Å (0.1 nm). 
     
     
         9 . A thermal vapor deposition method of depositing a silicon film on a substrate, the method comprising:
 a) setting a reactor containing the substrate to a temperature ranging from approximately 550° C. to approximately 800° C. and a pressure ranging from approximately 0.1 to approximately 100 Torr (13 Pa to 13,332 Pa);   b) introducing a vapor of pentachlorodisilane into the reaction chamber to form the silicon film on the substrate.   
     
     
         10 . The method of  claim 9 , further comprising introducing an inert gas. 
     
     
         11 . The method of  claim 9 , further comprising introducing a reducing gas. 
     
     
         12 . The method of  claim 9 , wherein the silicon film contains between approximately 0 atomic % and 5 atomic % C; between approximately 0 atomic % and 1 atomic % N; and between approximately 0 atomic % and 1 atomic % Cl. 
     
     
         13 . The method of  claim 12 , wherein the silicon film is an amorphous silicon film. 
     
     
         14 . The method of  claim 12 , wherein the silicon film is a polysilicon film.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.