Methods for producing polysilicon resistors

Abstract

A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.

What is claimed: 
     
         1 . A method for producing a polysilicon resistor device, comprising:
 forming a polysilicon layer;   forming an implantation mask over said polysilicon layer exposing a pre-defined subarea of said polysilicon layer;   implanting dopant atoms into said pre-defined subarea of said polysilicon layer through said implantation mask; and   creating diffusion of said dopant atoms, wherein said dopant atoms diffuse at most within said polysilicon layer.   
     
     
         2 . The method of  claim 1 , wherein said dopant atoms diffuse at most within a portion of said polysilicon layer. 
     
     
         3 . The method of  claim 1 , wherein forming said polysilicon layer comprises forming said polysilicon layer as an undoped layer. 
     
     
         4 . The method of  claim 1 , wherein forming said polysilicon layer is implemented by depositing polysilicon over an insulative layer. 
     
     
         5 . The method of  claim 1 , wherein the pre-defined subarea is a subarea in a central region of said polysilicon layer. 
     
     
         6 . The method of  claim 1 , wherein said dopant atoms are selected from a group composed of phosphorous atoms and arsenic atoms. 
     
     
         7 . The method of  claim 4 , wherein the dopant atoms are selected from atoms that do not diffuse into said insulative layer. 
     
     
         8 . The method of  claim 2 , wherein the diffusion of said dopant atoms is created by annealing of at least said portion of said polysilicon layer. 
     
     
         9 . The method of  claim 1 , wherein the dopant atoms comprise deep energy level donors. 
     
     
         10 . The method of  claim 9 , wherein said deep energy level donors are selected from a group composed of selenium, sulfur and nitrogen.