US2017257075A1PendingUtilityA1

Baw device and baw device manufacturing method

Assignee: DISCO CORPPriority: Mar 3, 2016Filed: Mar 2, 2017Published: Sep 7, 2017
Est. expiryMar 3, 2036(~9.6 yrs left)· nominal 20-yr term from priority
Inventors:Jun Abatake
H03H 9/17H03H 9/54H03H 3/02H03H 2003/025H03H 9/175H03H 9/172H03H 9/0014H03H 9/0095H10P 34/40H10N 30/085H10N 30/706
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Claims

Abstract

A BAW device including a substrate, and a piezoelectric element formed on a front surface of the substrate is provided. The substrate is provided on a back surface side thereof with an acoustic wave diffusion region including a recess formed by partially melting a back surface of the substrate.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A bulk acoustic wave device comprising:
 a substrate;   a piezoelectric element formed on a front surface of the substrate;   the substrate being provided on a back surface side thereof with an acoustic wave diffusion region including a recess formed by partially melting a back surface of the substrate.   
     
     
         2 . A bulk acoustic wave device manufacturing method for manufacturing a bulk acoustic wave device, the bulk acoustic wave device including
 a substrate,   a piezoelectric element formed on a front surface of the substrate,   the substrate being provided on a back surface side thereof with an acoustic wave diffusion region including a recess formed by partially melting a back surface of the substrate, the bulk acoustic wave device manufacturing method comprising:   a substrate preparation step of preparing the substrate formed on the front surface thereof with the piezoelectric element; and   an acoustic wave diffusion region forming step of applying a laser beam having such a wavelength as to be absorbed in the substrate from the back surface side of the substrate, to partially melt the back surface of the substrate, thereby forming an acoustic wave diffusion region including a recess.

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