Controlling within-die uniformity using doped polishing material

Abstract

Various embodiments include methods and integrated circuit structures. In some cases, an integrated circuit (IC) structure includes: a substrate; a set of fin structures overlying the substrate, the set of fin structures including a substrate base and a silicide layer over the substrate base; an oxide layer located between adjacent fins in the set of fin structures; and a nitride layer over the set of fin structures, wherein a height of the nitride layer is substantially uniform across the set of fin structures.

We claim: 
     
         1 . An integrated circuit (IC) structure comprising:
 a substrate;   a set of fin structures overlying the substrate, the set of fin structures including a substrate base and a silicide layer over the substrate base;   an oxide layer located between adjacent fins in the set of fin structures; and   a nitride layer over the set of fin structures, wherein a height of the nitride layer is substantially uniform across the set of fin structures.   
     
     
         2 . The IC structure of  claim 1 , wherein the oxide layer includes silicon dioxide (SiO 2 ) and is doped with at least one of carbon, phosphorous or boron, and wherein the nitride layer directly contacts the set of fin structures. 
     
     
         3 . The IC structure of  claim 1 , wherein the substantially uniform height is defined as having a deviation of less than approximately  2  nanometers across the nitride layer over the set of fin structures. 
     
     
         4 . The IC structure of  claim 1 , wherein the nitride layer includes silicon nitride (SiN).