Hybrid high-k dielectric material film stacks comprising zirconium oxide utilized in display devices

Abstract

Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include source and drain electrodes formed on a substrate, a gate insulating layer formed on a substrate covering the source and drain electrodes, wherein the gate insulating layer is hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer comprising metal, and a gate electrode formed above or below the gate insulating layer

What is claimed is: 
     
         1 . A thin film transistor structure comprising:
 source and drain electrodes formed on a substrate;   a gate insulating layer formed on a substrate covering the source and drain electrodes, wherein the gate insulating layer is hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer comprising metal; and   a gate electrode formed above or below the gate insulating layer.   
     
     
         2 . The structure of  claim 1 , further comprising:
 a capacitor layer formed on the gate electrode, wherein the capacitor layer is a hybrid film stack having a dielectric constant greater than 15.   
     
     
         3 . The structure of  claim 1 , wherein the hybrid film stack has a dielectric constant greater than 15. 
     
     
         4 . The structure of  claim 1 , wherein the interface layer is at least one of aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), titanium oxide (TiO 2 ), aluminum titanium oxide (AlTiO), aluminum zirconium oxide (AlZrO), zinc oxide (ZnO), indium tin oxide (ITO) or AlON. 
     
     
         5 . The structure of  claim 1 , wherein the interface layer of the hybrid film is formed on a silicon containing material. 
     
     
         6 . The structure of  claim 1 , wherein the dielectric layer comprising the zirconium containing material comprises aluminum in an amorphous structure. 
     
     
         7 . The structure of  claim 1 , wherein the dielectric layer comprising the zirconium containing layer has a crystalline structure. 
     
     
         8 . The structure of  claim 6 , wherein the dielectric layer is an aluminum doped ZrO 2  layer having a dielectric constant between about 15 and 25. 
     
     
         9 . The structure of  claim 7 , wherein the dielectric layer is a ZrO 2  layer having a dielectric constant between about 25 and about 50. 
     
     
         10 . The structure of  claim 1 , wherein the dielectric layer or the interface layer is formed by a ALD process or a PE-ALD process. 
     
     
         11 . The structure of  claim 6 , where the first layer of the zirconium containing material comprising aluminum has an aluminum concentration between about 10 atm. % and about 20 atm. %. 
     
     
         12 . The structure of  claim 5 , wherein the silicon containing material is silicon oxide or silicon nitride. 
     
     
         13 . A method for forming a hybrid film stack for display devices, comprising:
 performing an interface layer comprising metal of a hybrid film stack on a substrate; and   performing a dielectric layer of the hybrid film stack by an ALD process on the interface layer, wherein the dielectric layer comprises zirconium containing material, wherein the hybrid film stack is utilized as a capacitor layer or a gate insulating layer in display devices.   
     
     
         14 . The method of  claim 13 , wherein the substrate comprising silicon material further comprises:
 a silicon material disposed on the substrate.   
     
     
         15 . The method of  claim 13 , wherein the dielectric layer comprising the zirconium containing material comprises aluminum in an amorphous structure. 
     
     
         16 . The method of  claim 13 , wherein the dielectric layer comprising the zirconium containing material has a crystalline structure. 
     
     
         17 . The method of  claim 15 , wherein the interface layer is at least one of aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), titanium oxide (TiO 2 ), aluminum titanium oxide (AlTiO), aluminum zirconium oxide (AlZrO), zinc oxide (ZnO), indium tin oxide (ITO) or AlON. 
     
     
         18 . The structure of  claim 16 , wherein the dielectric layer is a ZrO 2  layer having a dielectric constant between about 25 and about 50. 
     
     
         19 . A device structure utilized for display devices, comprising:
 a hybrid film stack using as a capacitor structure formed between two electrodes in display devices, wherein the hybrid film stack comprises an aluminum containing layer and a Zr containing layer formed on the aluminum containing layer.   
     
     
         20 . The device structure of  claim 19 , further comprising:
 a silicon containing layer in the hybrid film stack formed under the aluminum containing layer.