Chemical deposition raw material including heterogeneous polynuclear complex and chemical deposition method using the chemical deposition raw material

Abstract

The present invention relates to a chemical deposition raw material including a heterogeneous polynuclear complex in which a cyclopentadienyl and a carbonyl are coordinated to a first transition metal and a second transition metal as central metals, the chemical deposition raw material being represented by the following formula. In the following formula, the first transition metal (Mi) and the second transition metal (M 2 ) are mutually different. The number of cyclopentadienyls (L) is 1 or more and 2 or less, and to the cyclopentadienyl is coordinated one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less as each of substituents R 1 to R 5 . With the chemical deposition raw material of the present invention, a composite metal thin film or a composite metal compound thin film containing plural metals can be formed from a single raw material.

1 . A chemical deposition raw material for producing a composite metal thin film or a composite metal compound thin film by a chemical deposition method,
 comprising a heterogeneous polynuclear complex in which a cyclopentadienyl (L) and a carbonyl are coordinated to a first transition metal (M 1 ) as a central metal, and a carbonyl is coordinated to a second transition metal (M 2 ) as a central metal, the heterogeneous polynuclear complex being represented by the chemical formula 1:   
       
         
           
           
               
               
           
         
         wherein M 1  is Ru, and M 2  is one of Mn and Co; n is 3 or more and 5 or less; and each of R 1  to R 5  is a hydrogen atom, or an alkyl group with a carbon number of 1 or more and 5 or less. 
       
     
     
         2 . The chemical deposition raw material according to  claim 1 , wherein x is 1 and y is n+2, the chemical deposition raw material comprising a heterogeneous polynuclear complex represented by the following formula: 
       
         
           
           
               
               
           
         
         wherein M 1  is one of Ru, Mn and Fe, M 2  is one of V, Cr, Mn, Fe, Co and Ni, and M 1  and M 2  are different; n is 3 or more and 5 or less; and R 1  to R 5  are each one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less. 
       
     
     
         3 . The chemical deposition raw material according to  claim 1 , wherein the transition metal is one of Mn, Fe, Co, Ni, Cu, Nb, Mo, Ru, Rh, Ta, W, Ir and Pt. 
     
     
         4 . The chemical deposition raw material according to  claim 1 , wherein M 1  is one of Ru, Mn and Fe, M 2  is one of Mn, Fe, Co and Ni, and M 1  and M 2  are different. 
     
     
         5 . The chemical deposition raw material according to  claim 1 , wherein each of R 1  to R 5  is one of a hydrogen atom, a methyl group, an ethyl group, a propyl group and a butyl group. 
     
     
         6 . The chemical deposition raw material according to  claim 1 , wherein the total carbon number of all the substituents R 1  to R 5  is 1 or more and 4 or less. 
     
     
         7 . A method for chemical deposition of a composite metal thin film or a composite metal compound thin film, comprising vaporizing a raw material including a heterogeneous polynuclear complex to prepare a raw material gas, and while introducing the raw material gas to a substrate surface, the gas is heated,
 wherein the chemical deposition raw material defined in  claim 1  is used as the raw material.   
     
     
         8 . The chemical deposition raw material according to  claim 5 , wherein the total carbon number of all the substituents R 1  to R 5  is 1 or more and 4 or less. 
     
     
         9 . A method for chemical deposition of a composite metal thin film or a composite metal compound thin film, comprising vaporizing a raw material including a heterogeneous polynuclear complex to prepare a raw material gas, and while introducing the raw material gas to a substrate surface, the gas is heated,
 wherein the chemical deposition raw material defined in  claim 5  is used as the raw material.   
     
     
         10 . A method for chemical deposition of a composite metal thin film or a composite metal compound thin film, comprising vaporizing a raw material including a heterogeneous polynuclear complex to prepare a raw material gas, and while introducing the raw material gas to a substrate surface, the gas is heated,
 wherein the chemical deposition raw material defined in  claim 6  is used as the raw material.