Method for preparing a semiconductor package

Abstract

The present disclosure provides a method far preparing a semiconductor package. The semiconductor package includes a semiconductor device having an upper surface and a side, wherein the upper surface and the side form a corner of the semiconductor device. The semiconductor package also includes a lateral bump structure disposed on the side and implementing a lateral signal path of the semiconductor device. The semiconductor package further includes a vertical hump structure disposed over the upper surface and implementing a vertical signal path of the semiconductor device.

What is claimed is: 
     
         1 . A method for preparing a semiconductor package, comprising:
 providing a semiconductor device having a bulk region and an edge region adjacent to the bulk region;   forming a depression in the edge region, wherein the depression exposes a side of the bulk region; and   forming a lateral bump structure in the depression, wherein the lateral bump structure is formed on the side and implements a lateral signal path of the semiconductor device.   
     
     
         2 . The method for preparing a semiconductor package of  claim 1 , comprising:
 forming a mask over an upper surface of the semiconductor device, wherein the mask has an aperture exposing a portion of the edge region; and   performing an etching process to remove a portion of the edge region exposed by the aperture to form the depression.   
     
     
         3 . The method for preparing a semiconductor package of  claim 2 , further comprising:
 forming a bumping material in the depression;   removing the mask; and   performing a thermal process to form the lateral bump structure.   
     
     
         4 . The method for preparing a semiconductor package of  claim 3 , further comprising:
 performing an etching process to increase a depth of the depression before the thermal process.   
     
     
         5 . The method for preparing a semiconductor package of  claim 3 , further comprising:
 performing a grinding process from a bottom surface of the semiconductor device to remove the edge region of the semiconductor device after the thermal process.   
     
     
         6 . The method for preparing a semiconductor package of  claim 1 ,
 forming a mask over an upper surface of the semiconductor device, wherein the mask has an opening exposing a portion of the bulk region.   
     
     
         7 . The method for preparing a semiconductor package of  claim 6 , further comprising:
 forming a bumping material in the opening;   removing the mask; and   performing a thermal process to form a vertical bump structure on the bulk region.   
     
     
         8 . The method for preparing a semiconductor package of  claim 1 , further comprising:
 forming a vertical bump structure over an upper surface of the semiconductor device and implementing a vertical signal path of the semiconductor device.   
     
     
         9 . The method for preparing a semiconductor package of  claim 8 , wherein the vertical bump structure is integrally formed with the lateral bump structure.