Semiconductor Processing System Having Multiple Decoupled Plasma Sources

Abstract

A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.

What is claimed is: 
     
         1 . A method for processing a semiconductor substrate, comprising:
 operating a first set of plasma microchambers in exposure to a processing region, wherein each of the first set of plasma microchambers generates a first plasma and supplies reactive constituents of the first plasma to the processing region, the first set of plasma microchambers located above the processing region opposite from a substrate support on which a substrate is present; and   operating a second set of plasma microchambers in exposure to the processing region, wherein each of the second set of plasma microchambers generates a second plasma and supplies reactive constituents of the second plasma to the processing region, wherein the second plasma is different than the first plasma, the second set of plasma microchambers located above the processing region opposite from the substrate support and interspersed in a substantially uniform manner among the first set of plasma microchambers.   
     
     
         2 . The method for processing a semiconductor substrate as recited in  claim 1 , further comprising:
 supplying a first power to the first set of plasma microchambers;   supplying a first process gas to the first set of plasma microchambers;   supplying a second power to the second set of plasma microchambers; and   supplying a second process gas to the second set of plasma microchambers.   
     
     
         3 . The method for processing a semiconductor substrate as recited in  claim 2 , further comprising:
 independently controlling either the first and second powers, or the first and second process gases, or both the first and second powers and the first and second process gases.   
     
     
         4 . The method for processing a semiconductor substrate as recited in  claim 2 , wherein the first power is either direct current (DC) power, radiofrequency (RF) power, or a combination of DC and RF power, and wherein the second power is either DC power, RF power, or a combination of DC and RF power. 
     
     
         5 . The method for processing a semiconductor substrate as recited in  claim 2 , further comprising:
 removing exhaust gases from the processing region through a set of exhaust channels defined to remove gases from the processing region in a direction substantially perpendicular to and away from a top surface of the substrate support upon which the substrate is placed.   
     
     
         6 . The method for processing a semiconductor substrate as recited in  claim 5 , wherein the second set of plasma microchambers are respectively defined inside the set of exhaust channels. 
     
     
         7 . The method for processing a semiconductor substrate as recited in  claim 1 , further comprising:
 operating the first set of plasma microchambers to generate the first plasma to have a first ratio of ion density to radical density; and   operating the second set of plasma microchambers to generate the second plasma to have a second ratio of ion density to radical density, the second ratio of ion density to radical density in the second plasma being different than the first ratio of ion density to radical density in the first plasma.   
     
     
         8 . The method for processing a semiconductor substrate as recited in  claim 7 , wherein the first plasma has a higher radical density than ion density, and wherein the second plasma has a higher ion density than radical density. 
     
     
         9 . The method for processing a semiconductor substrate as recited in  claim 1 , wherein the first and second sets of plasma microchambers are operated in a simultaneous manner. 
     
     
         10 . The method for processing a semiconductor substrate as recited in  claim 1 , wherein the first and second sets of plasma microchambers are operated in a pulsed manner, wherein the pulsed manner includes operation of either the first set of plasma microchambers or the second set of plasma microchambers at a given time and in an alternating sequence. 
     
     
         11 . The method for processing a semiconductor substrate as recited in  claim 1 , further comprising:
 applying a bias voltage across the processing region from the substrate support so as to attract ions from one or both of the first and second plasmas toward the substrate.   
     
     
         12 . An apparatus for processing a semiconductor substrate, comprising:
 a system configured to direct operation of a first set of plasma microchambers in exposure to a processing region, wherein each of the first set of plasma microchambers generates a first plasma and supplies reactive constituents of the first plasma to the processing region, the first set of plasma microchambers located above the processing region opposite from a substrate support on which a substrate is present,   wherein the system is configured to operate a second set of plasma microchambers in exposure to the processing region, wherein each of the second set of plasma microchambers generates a second plasma and supplies reactive constituents of the second plasma to the processing region, wherein the second plasma is different than the first plasma, the second set of plasma microchambers located above the processing region opposite from the substrate support and interspersed in a substantially uniform manner among the first set of plasma microchambers.   
     
     
         13 . The apparatus for processing a semiconductor substrate as recited in  claim 12 , wherein the system is configured to direct supply of a first power to the first set of plasma microchambers, and wherein the system is configured to direct supply of a first process gas to the first set of plasma microchambers, and wherein the system is configured to direct supply of a second power to the second set of plasma microchambers, and wherein the system is configured to direct supply a second process gas to the second set of plasma microchambers. 
     
     
         14 . The apparatus for processing a semiconductor substrate as recited in  claim 13 , wherein the system is configured to enable independent control of either the first and second powers, or the first and second process gases, or both the first and second powers and the first and second process gases. 
     
     
         15 . The apparatus for processing a semiconductor substrate as recited in  claim 13 , wherein the first power is either direct current (DC) power, radiofrequency (RF) power, or a combination of DC and RF power, and wherein the second power is either DC power, RF power, or a combination of DC and RF power. 
     
     
         16 . The apparatus for processing a semiconductor substrate as recited in  claim 13 , wherein the system is configured to direct removal of exhaust gases from the processing region through a set of exhaust channels defined to remove gases from the processing region in a direction substantially perpendicular to and away from a top surface of the substrate support upon which the substrate is placed. 
     
     
         17 . The apparatus for processing a semiconductor substrate as recited in  claim 16 , wherein the second set of plasma microchambers are respectively defined inside the set of exhaust channels. 
     
     
         18 . The apparatus for processing a semiconductor substrate as recited in  claim 12 , wherein the system is configured to direct operation of the first set of plasma microchambers to generate the first plasma to have a first ratio of ion density to radical density, and wherein the system is configured to direction operation of the second set of plasma microchambers to generate the second plasma to have a second ratio of ion density to radical density, the second ratio of ion density to radical density in the second plasma being different than the first ratio of ion density to radical density in the first plasma. 
     
     
         19 . The apparatus for processing a semiconductor substrate as recited in  claim 18 , wherein the first plasma has a higher radical density than ion density, and wherein the second plasma has a higher ion density than radical density. 
     
     
         20 . The apparatus for processing a semiconductor substrate as recited in  claim 12 , wherein the system is configured to direct operation of the first and second sets of plasma microchambers in a simultaneous manner. 
     
     
         21 . The apparatus for processing a semiconductor substrate as recited in  claim 12 , wherein the system is configured to direct operation of the first and second sets of plasma microchambers in a pulsed manner, wherein the pulsed manner includes operation of either the first set of plasma microchambers or the second set of plasma microchambers at a given time and in an alternating sequence. 
     
     
         22 . The apparatus for processing a semiconductor substrate as recited in  claim 12 , wherein the system is configured to direct application of a bias voltage across the processing region from the substrate support so as to attract ions from one or both of the first and second plasmas toward the substrate.