Method Of Fabricating A Semiconductor Wafer Including A Through Substrate Via (TSV) And A Stepped Support Ring On A Back Side Of The Wafer

Abstract

A semiconductor wafer having a plurality of through substrate vias (TSVs) is disclosed. The semiconductor wafer includes a stepped support ring on an outer edge of the semiconductor wafer, a usable back side region of the semiconductor wafer substantially enclosed by the stepped support ring, and the plurality of TSVs extending from a front side of the semiconductor wafer to the usable back side region of the semiconductor wafer. The stepped support ring includes a step between an outer ring and an inner ring of the stepped support ring. The semiconductor wafer further includes a back side metal on the usable back side region of the semiconductor wafer, a plurality of semiconductor devices on the front side of the semiconductor wafer, where at least one of the plurality of semiconductor devices is coupled to the back side metal through at least one of the plurality of TSVs.

1 . A semiconductor wafer having a plurality of through substrate vias (TSVs), said semiconductor wafer comprising:
 a stepped support ring on an outer edge of said semiconductor wafer;   a usable back side region of said semiconductor wafer substantially enclosed by said stepped support ring; and   said plurality of TSVs extending from a front side of said semiconductor wafer to said usable back side region of said semiconductor wafer.   
     
     
         2 . The semiconductor wafer of  claim 1 , wherein said stepped support ring comprises a step between an outer ring and an inner ring of said stepped support ring. 
     
     
         3 . The semiconductor wafer of  claim 1 , wherein at least one of said plurality of TSVs comprises tungsten. 
     
     
         4 . The semiconductor wafer of  claim 1 , further comprising a back side metal on said usable back side region of said semiconductor wafer. 
     
     
         5 . The semiconductor wafer of  claim 1 , further comprising a plurality of semiconductor devices on said front side of said semiconductor wafer. 
     
     
         6 . The semiconductor wafer of  claim 5 , wherein at least one of said plurality of semiconductor devices is coupled to a back side metal through at least one of said plurality of TSVs. 
     
     
         7 . A semiconductor wafer having a plurality of devices, said semiconductor wafer comprising:
 a stepped support ring on an outer edge of said semiconductor wafer, said stepped support ring having a step between an outer ring and an inner ring of said stepped support ring;   a usable back side region of said semiconductor wafer substantially enclosed by said stepped support ring;   said plurality of devices situated on a front side of said semiconductor wafer.   
     
     
         8 . The semiconductor wafer of  claim 7 , wherein at least one of said plurality of devices includes an active semiconductor device. 
     
     
         9 . The semiconductor wafer of  claim 7 , wherein at least one of said plurality of devices includes a passive device. 
     
     
         10 . The semiconductor wafer of  claim 7 , further comprising a back side metal on said usable back side region. 
     
     
         11 . The semiconductor wafer of  claim 10 , wherein at least one of said plurality of devices is coupled to said back side metal through at least one through substrate via (TSV).