Semiconductor device package

Abstract

A semiconductor device package includes: (1) a conductive base comprising a sidewall, a cavity defined from a first surface of the conductive base, the cavity having a bottom surface and a depth; (2) a semiconductor die disposed on the bottom surface of the cavity, the semiconductor die having a first surface and a second surface opposite the first surface, the second surface of the semiconductor die bonded to the bottom surface of the cavity; and (3) a first insulating material covering the sidewall of the conductive base and extending to a bottom surface of the conductive base.

What is claimed is: 
     
         1 . A semiconductor device package, comprising:
 a conductive base comprising a sidewall, a cavity defined from a first surface of the conductive base, the cavity having a bottom surface and a depth;   a semiconductor die disposed on the bottom surface of the cavity, the semiconductor die having a first surface and a second surface opposite the first surface, the second surface of the semiconductor die bonded to the bottom surface of the cavity; and   a first insulating material covering the sidewall of the conductive base and extending to a bottom surface of the conductive base.   
     
     
         2 . The semiconductor device package of  claim 1 , wherein at least one corner of the conductive base is smoothed. 
     
     
         3 . The semiconductor device package of  claim 2 , wherein the first insulating material surrounds the at least one corner of the conductive base. 
     
     
         4 . The semiconductor device package of  claim 1 , further comprising a second insulating material disposed on the bottom surface of the conductive base and contacting the first insulating material. 
     
     
         5 . The semiconductor device package of  claim 1 , wherein a distance between the first surface of the semiconductor die and the first surface of the conductive base is about 20% of the depth of the cavity. 
     
     
         6 . The semiconductor device package of  claim 1 , wherein a portion of the conductive base defining a sidewall of the cavity further defines an opening. 
     
     
         7 . The semiconductor device package of  claim 1 , wherein the conductive base comprises a stepped structure, wherein the stepped structure is filled with the first insulating material. 
     
     
         8 . The semiconductor device package of  claim 1 , wherein the conductive base comprises one or more protrusions. 
     
     
         9 . The semiconductor device package of  claim 1 , wherein the first insulating material further covers a part of the bottom surface of the conductive base. 
     
     
         10 . The semiconductor device package of  claim 1 , further comprising a conductive adhesive layer between the second surface of the semiconductor die and the bottom surface of the cavity, wherein the conductive adhesive layer contacts a portion of the conductive base defining a sidewall of the cavity. 
     
     
         11 . The semiconductor device package of  claim 1 , further comprising a second conductive base disposed above the semiconductor die, and a second semiconductor die bonded to the second conductive base. 
     
     
         12 . The semiconductor device package of  claim 1 , wherein the first surface of the semiconductor die is below the first surface of the conductive base. 
     
     
         13 . A semiconductor device package, comprising:
 a conductive base comprising:
 a sidewall; 
 a first surface and a second surface opposite the first surface; and 
 a cavity defined from the first surface of the conductive base, the cavity having a bottom surface, a sidewall and a depth; and 
   a semiconductor die disposed on the bottom surface of the cavity and having a first thickness,   wherein at least one corner of the conductive base is smoothed.   
     
     
         14 . The semiconductor device package of  claim 13 , further comprising a conductive adhesive layer between the semiconductor die and the bottom surface of the cavity, the conductive adhesive layer having a second thickness,
 wherein a sum of the first thickness and the second thickness is less than the depth of the cavity.   
     
     
         15 . The semiconductor device package of  claim 13 , wherein a portion of the conductive base defining the sidewall of the cavity further defines an opening. 
     
     
         16 . The semiconductor device package of  claim 13 , further comprising a first insulating material, wherein the conductive base comprises a stepped structure, wherein the stepped structure is filled with the first insulating material. 
     
     
         17 . The semiconductor device package of  claim 16 , further comprising a solder mask layer disposed over the first insulating material. 
     
     
         18 . The semiconductor device package of  claim 13 , wherein the conductive base comprises one or more protrusions. 
     
     
         19 . The semiconductor device package of  claim 13 , further comprising a second conductive base disposed above the semiconductor die, and a second semiconductor die bonded to the second conductive base. 
     
     
         20 . The semiconductor device package of  claim 13 , further comprising a first insulating material, wherein the first insulating material surrounds the at least one corner of the conductive base.