Techniques for forming optoelectronic devices

Abstract

Embodiments relate to use of a particle accelerator beam to form thin films of material from a bulk substrate. In particular embodiments, a bulk substrate (e.g. donor substrate) having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise GaN; in other embodiments this bulk substrate may comprise Si, SiC, or other materials. Then, a thin film or wafer of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. In certain embodiments this separated material is incorporated directly into an optoelectronic device, for example a GaN film cleaved from GaN bulk material. In some embodiments, this separated material may be employed as a template for further growth of semiconductor materials (e.g. GaN) that are useful for optoelectronic devices.

What is claimed is: 
     
         1 . A method comprising:
 providing a GaN workpiece;   introducing a plurality of particles into a surface of the GaN workpiece to form a cleave region in the GaN workpiece;   bonding the surface of the GaN workpiece to a substrate;   applying energy to cleave a detached thickness of GaN, from a remainder of the GaN workpiece; and   processing the substrate bearing the detached thickness of GaN.   
     
     
         2 . A method as in  claim 1  wherein the substrate comprises a metal. 
     
     
         3 . A method as in  claim 2  wherein:
 the metal comprises a reflecting layer positioned between the detached thickness of GaN and a remainder of the substrate following the application of energy; and 
 the method further comprises processing the substrate to create a light emitting diode device. 
 
     
     
         4 . A method as in  claim 3  wherein the wherein the substrate comprises an integrated pattern including filler. 
     
     
         5 . A method as in  claim 4  wherein the integrated pattern includes electrically conductive islands. 
     
     
         6 . A method as in  claim 5  wherein the filler comprises silicon oxide and/or aluminum nitride. 
     
     
         7 . A method as in  claim 1  wherein the substrate comprises sapphire. 
     
     
         8 . A method as in  claim 7  wherein the processing comprises laser lift-off to create the light emitting diode device. 
     
     
         9 . A method as in  claim 7  wherein the substrate comprises double-sided polished sapphire. 
     
     
         10 . A method as in  claim 1  wherein the processing comprises performing polishing and/or other surface treatment. 
     
     
         11 . A method as in  claim 10  wherein the other surface treatment includes annealing. 
     
     
         12 . A method as in  claim 10  wherein the other surface treatment includes a plasma etch. 
     
     
         13 . A method as in  claim 10  wherein the other surface treatment includes a chemical etch. 
     
     
         14 . A method as in  claim 1  wherein the substrate further comprises a bond layer. 
     
     
         15 . A method as in  claim 14  wherein:
 the bond layer comprises a thermo-compression bond layer; and 
 the bonding comprises a thermo-compression bonding process. 
 
     
     
         16 . A method as in  claim 15  wherein the thermo-compression bond layer comprises copper, aluminum, or gold. 
     
     
         17 . A method as in  claim 1  wherein the bonding comprises a plasma activated bonding (PAB) process. 
     
     
         18 . A method as in  claim 1  wherein the metal is configured to serve as a thermal contact and an electrical contact for a device comprising the detached thickness of GaN. 
     
     
         19 . A method as in  claim 1  wherein the bonding comprises a self-bonding process placing an oxide face comprising one of the surface and the GaN workpiece, against a cleaned face comprising the other of the surface and the GaN workpiece. 
     
     
         20 . A method as in  claim 1  wherein:
 the substrate further comprises an electrically insulating layer that is positioned between the detached thickness of GaN and the metal following the application of energy; and 
 the method further comprises processing the substrate to create an electronic device.