Inventor · disambiguated record
Sien G. Kang
Also filed as: KANG SIEN · KANG SIEN G · KANG SIEN GIOK
20 granted patents·7 pending applications·963 citations·filing 1992–2018
96Inventor score
Top patents by PatentIndex Score
27 records- 0197US6448152B1Method and system for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customerSILICON GENESIS CORP·Filed 2001·Granted Sep 10, 2002·149 cites·29 claims
- 0296US6969668B1Treatment method of film quality for the manufacture of substratesSILICON GENESIS CORP·Filed 2000·Granted Nov 29, 2005·104 cites·23 claims
- 0394US6881644B2Smoothing method for cleaved films made using a release layerSILICON GENESIS CORP·Filed 2002·Granted Apr 19, 2005·84 cites·34 claims
- 0494US6287941B1Surface finishing of SOI substrates using an EPI processSILICON GENESIS CORP·Filed 1999·Granted Sep 11, 2001·142 cites·13 claims
- 0594US6171965B1Treatment method of cleaved film for the manufacture of substratesSILICON GENESIS CORP·Filed 1999·Granted Jan 9, 2001·136 cites·20 claims
- 0692US6455399B2Smoothing method for cleaved films made using thermal treatmentSILICON GENESIS CORP·Filed 2001·Granted Sep 24, 2002·59 cites·17 claims
- 0789US10164144B2Bond and release layer transfer processQMAT INC·Filed 2017·Granted Dec 25, 2018·7 cites·17 claims
- 0889US7598153B2Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen speciesSILICON GENESIS CORP·Filed 2006·Granted Oct 6, 2009·26 cites·48 claims
- 0988US9257339B2Techniques for forming optoelectronic devicesSILICON GENESIS CORP·Filed 2013·Granted Feb 9, 2016·7 cites·30 claims
- 1084US9859458B2Bond and release layer transfer processQMAT INC·Filed 2016·Granted Jan 2, 2018·4 cites·26 claims
- 1184US6204151B1Smoothing method for cleaved films made using thermal treatmentSILICON GENESIS CORP·Filed 1999·Granted Mar 20, 2001·65 cites·20 claims
- 1282US5447570APurge gas in wafer coating area selectionGENUS INC·Filed 1992·Granted Sep 5, 1995·88 cites·33 claims
- 1380US8133800B2Free-standing thickness of single crystal material and method having carrier lifetimesHENLEY FRANCOIS J·Filed 2009·Granted Mar 13, 2012·9 cites·21 claims
- 1472US10041187B2Techniques for forming optoelectronic devicesQMAT INC·Filed 2014·Granted Aug 7, 2018·2 cites·13 claims
- 1562US5387289AFilm uniformity by selective pressure gradient controlGENUS INC·Filed 1992·Granted Feb 7, 1995·36 cites·9 claims
- 1662US5272112ALow-temperature low-stress blanket tungsten filmGENUS INC·Filed 1992·Granted Dec 21, 1993·22 cites·10 claims
- 1758US7253081B2Surface finishing of SOI substrates using an EPI processSILICON GENESIS CORP·Filed 2001·Granted Aug 7, 2007·6 cites·17 claims
- 1855US2017358704A1Techniques for forming optoelectronic devicesSILICON GENESIS CORP·Filed 2017·Application pending·0 cites
- 1954US2019103507A1Bond and release layer transfer processQMAT INC·Filed 2018·Application pending·0 cites
- 2054US2017084778A1Techniques for forming optoelectronic devicesSILICON GENESIS CORP·Filed 2016·Application pending·0 cites
- 2152US2016111500A1Techniques for forming optoelectronic devicesSILICON GENESIS CORP·Filed 2015·Application pending·0 cites
- 2252US2019024259A1Techniques for forming optoelectronic devicesQMAT INC·Filed 2018·Application pending·0 cites
- 2351US8187377B2Non-contact etch annealing of strained layersMALIK IGOR J·Filed 2002·Granted May 29, 2012·5 cites·20 claims
- 2451US2007259526A1Surface finishing of SOI substrates using an EPI processSILICON GENESIS CORP·Filed 2007·Application pending·0 cites
- 2545US2009152162A1Carrier apparatus and method for shaped sheet materialsSILICON GENESIS CORP·Filed 2007·Application pending·0 cites
- 2640US5963836AMethods for minimizing as-deposited stress in tungsten silicide filmsGENUS INC·Filed 1996·Granted Oct 5, 1999·9 cites·11 claims
- 2729US6130159AApparatus and methods for minimizing as-deposited stress in tungsten silicide filmsGENUS INC·Filed 1999·Granted Oct 10, 2000·3 cites·5 claims
Join the waitlist — get patent alerts
Get an alert when Sien G. Kang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →