Bond and release layer transfer process

Abstract

Embodiments transfer thin layers of material utilized in electronic devices (e.g., GaN for optoelectronic devices), from a donor to a handle substrate. Certain embodiments employ bond-and-release system(s) where release occurs along a cleave plane formed by implantation of particles into the donor. Some embodiments may rely upon release by converting components from solid to liquid under carefully controlled thermal conditions (e.g., solder-based materials and/or thermal decomposition of Indium-containing materials). Some embodiments utilize laser-induced film release processes using epitaxially grown or implanted regions as an optically absorptive region. A single bond-and-release sequence may involve processing an exposed N-face of GaN material. Multiple bond-and-release sequences (involving processing an exposed Ga-face of GaN material) may be employed in series, for example utilizing a temporary handle substrate as an intermediary. Particular embodiments form template blanks of high quality GaN suitable for manufacturing High Brightness-Light Emitting Diode (HB-LED) devices.

What is claimed is: 
     
         1 . An apparatus comprising:
 a GaN substrate implanted with particles through a face to form a cleave region;   a first metal layer overlying the face;   a bond-and-release system in contact with the first metal layer; and   a second metal layer in contact with the bond-and-release system and overlying a releasable substrate.   
     
     
         2 . An apparatus as in  claim 1  further comprising an adhesion layer between the first metal layer and the GaN material. 
     
     
         3 . An apparatus as in  claim 2  wherein the adhesion layer comprises Ti. 
     
     
         4 . An apparatus as in  claim 1  further comprising an adhesion layer between the second metal layer and the releasable substrate. 
     
     
         5 . An apparatus as in  claim 4  wherein the adhesion layer comprises Ti. 
     
     
         6 . An apparatus as in  claim 1  wherein the bond-and-release system comprises indium. 
     
     
         7 . An apparatus as in  claim 6  wherein the bond-and-release system further comprises copper. 
     
     
         8 . An apparatus as in  claim 6  wherein the bond-and-release system further comprises silver. 
     
     
         9 . An apparatus as in  claim 6  wherein the bond-and-release system further comprises gold. 
     
     
         10 . An apparatus as in  claim 6  wherein the bond-and-release system further comprises nitrogen. 
     
     
         11 . An apparatus as in  claim 6  wherein the bond-and-release system further comprises Gallium. 
     
     
         12 . An apparatus as in  claim 1  wherein the face comprises a N-face of the GaN substrate. 
     
     
         13 . An apparatus as in  claim 1  wherein the face comprises a Ga-face of the GaN substrate. 
     
     
         14 . An apparatus comprising:
 a cleaved GaN layer having a first face and a second face;   a bond-and-release system between the first face and a releasable substrate; and   a permanent substrate bonded to the second face.   
     
     
         15 . An apparatus as in  claim 14  wherein the bond-and-release system comprises Indium. 
     
     
         16 . An apparatus as in  claim 15  wherein the bond-and-release system is selected from a Cu/In phase, an Ag/In phase, and an Au/In phase. 
     
     
         17 . An apparatus as in  claim 14  further comprising an adhesion layer between the bond-and-release system. 
     
     
         18 . An apparatus as in  claim 17  wherein the adhesion layer comprises Ti. 
     
     
         19 . An apparatus as in  claim 14  wherein the first face is a Ga-face of the cleaved GaN layer and the second face is a N-face of the cleaved GaN layer. 
     
     
         20 . An apparatus as in  claim 14  wherein the first face is a N-face of the cleaved GaN layer and the second face is a Ga-face of the cleaved GaN layer.