Vapor disposition of silicon-containing films using penta-substituted disilanes

Abstract

Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

We claim: 
     
         1 . A thermal vapor deposition method of depositing a silicon film on a substrate, the method comprising:
 a) setting a reactor containing the substrate to a temperature ranging from approximately 550° C. to approximately 800° C. and a pressure ranging from approximately 0.1 to approximately 100 Torr (13 Pa to 13,332 Pa);   b) introducing a vapor of pentachlorodisilane into the reaction chamber to form the silicon film on the substrate.   
     
     
         2 . The method of  claim 1 , further comprising introducing an inert gas. 
     
     
         3 . The method of  claim 2 , wherein the inert gas is N 2 . 
     
     
         4 . The method of  claim 1 , further comprising introducing a reducing gas. 
     
     
         5 . The method of  claim 1 , wherein the silicon film contains between approximately 0 atomic % and 5 atomic % C; between approximately 0 atomic % and 1 atomic % N; and between approximately 0 atomic % and 1 atomic % Cl. 
     
     
         6 . The method of  claim 5 , wherein the silicon film is an amorphous silicon film. 
     
     
         7 . The method of  claim 5 , wherein the silicon film is a polysilicon film. 
     
     
         8 . The method of  claim 3 , wherein the silicon film contains between approximately 0 atomic % and 5 atomic % C; between approximately 0 atomic % and 1 atomic % N; and between approximately 0 atomic % and 1 atomic % Cl. 
     
     
         9 . The method of  claim 8 , wherein the silicon film is an amorphous silicon film. 
     
     
         10 . The method of  claim 8 , wherein the silicon film is a polysilicon film.