US2019035651A1PendingUtilityA1
Substrate cleaning method, substrate cleaning device, and method of selecting cluster generating gas
Est. expiryJan 21, 2036(~9.5 yrs left)· nominal 20-yr term from priority
Inventors:Kazuya Dobashi
H10P 72/0604H10P 72/0602H10P 72/0406H10P 72/0402H10P 70/60H10P 70/12H10P 70/00H10P 72/0414B08B 7/0071H01L 21/02041H01L 21/67051H10P 72/0408H10P 52/00H10P 14/6529
37
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Claims
Abstract
A substrate cleaning method includes injecting a cluster generating gas from a cluster nozzle into a processing chamber, generating gas clusters by adiabatically expanding the cluster generating gas, and removing particles adhered to a target substrate in the processing chamber by irradiating the gas clusters onto the target substrate. The cluster generating gas is selected based on a product Φ of energy K per molecule or atom of the cluster generating gas that is expressed by the following equation (1) and an index C indicating the ease with which the gas forms clusters that is expressed by the following equation (2), K=1/2mv 2 =γ/γ−1k B T 0 . . . (1) C=(T b /T 0 ) γ/γ−1 . . . (2) where k B : a Boltzmann constant, γ: a specific heat ratio of the cluster generating gas, m: a mass of the cluster generating gas, v: a speed of the cluster generating gas, T 0 : a gas supply temperature, T b : a boiling point of the cluster generating gas.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A substrate cleaning method comprising:
supplying a cluster generating gas to a cluster nozzle at a predetermined pressure; injecting the cluster generating gas from the cluster nozzle into a processing chamber accommodating a target substrate and maintained in a vacuum state; generating gas clusters by adiabatically expanding the cluster generating gas; and removing particles adhered to the target substrate by irradiating the gas clusters onto the target substrate in the processing chamber, wherein the cluster generating gas is selected based on a product Φ of energy K per molecule or atom of the cluster generating gas injected from the cluster nozzle that is expressed by the following equation (1) and an index C indicating the ease with which the gas forms clusters that is expressed by the following equation (2),
K
=
1
2
mv
2
=
γ
γ
-
1
k
B
T
0
(
1
)
where k B represents a Boltzmann constant; γ represents a specific heat ratio of the cluster generating gas; m represents a mass of the cluster generating gas; v represents a speed of the cluster generating gas; and T 0 represents a gas supply temperature,
C
=
(
T
b
T
0
)
γ
γ
-
1
(
2
)
where T b represents a boiling point of the cluster generating gas, T 0 represents a gas supply temperature and γ represents a specific neat ratio of the cluster generating gas.
2 . The substrate cleaning method of claim 1 , wherein a gas having a value of Φ greater than a value of Φ of CO 2 gas is used as the cluster generating gas.
3 . The substrate cleaning method of claim 2 , wherein a supply temperature of the cluster generating gas is 220K or more.
4 . The substrate cleaning method of claim 3 , wherein the cluster generating gas is any one of C 3 H 6 , C 3 H 8 , and C 4 H 10 .
5 . The substrate cleaning method of claim 1 , wherein an accelerating gas for accelerating the gas cluster is mixed with the cluster generating gas and the mixed gas is supplied to the cluster nozzle.
6 . The substrate cleaning method of claim 5 , wherein the accelerating gas is H 2 or He.
7 . The substrate cleaning method of claim 1 , wherein a size of the gas cluster is controlled by a supply pressure of the cluster generating gas or the mixed gas, a supply temperature of the cluster generating gas or the mixed gas, or an orifice diameter of the cluster nozzle.
8 . A substrate cleaning apparatus for cleaning a substrate by using gas clusters, comprising:
a processing chamber accommodating a target substrate and maintained in a vacuum state; a substrate holding unit configured to hole the target substrate in the processing chamber; a gas exhaust unit configured to exhaust the processing chamber; a cluster generating gas supply unit configured to supply a cluster generating gas; and a cluster nozzle configured to inject the cluster generating gas supplied from the cluster generating gas supply unit at a predetermined pressure into the processing chamber and irradiate gas clusters generated by adiabatic expansion of the cluster generating gas onto the target substrate, wherein the cluster gas supply unit uses as the cluster generating gas a gas selected based on a product Φ of energy K per molecule or atom of the cluster generating gas injected from the cluster nozzle that is expressed by the following equation (1) and an index C indicating the ease with which the gas forms clusters that is expressed by the following equation (2),
K
=
1
2
mv
2
=
γ
γ
-
1
k
B
T
0
(
1
)
where k B represents a Boltzmann constant; γ represents a specific heat ratio of the cluster generating gas; m represents a mass of the cluster generating gas; v represents a speed of the cluster generating gas; and T 0 represents a gas supply temperature,
C
=
(
T
b
T
0
)
γ
γ
-
1
(
2
)
where T b represents a boiling point of the cluster generating gas, T 0 represents a gas supply temperature and γ represents a specific heat ratio of the cluster generating gas.
9 . The substrate cleaning apparatus of claim 8 , wherein a gas having a value of Φ greater than a value of Φ of CO 2 gas is used as the cluster generating gas.
10 . The substrate cleaning apparatus of claim 9 , wherein a supply temperature of the cluster generating gas is 220K or more.
11 . The substrate cleaning apparatus of claim 9 , wherein the cluster generating gas is any one of C 3 H 6 , C 3 H 8 , and C 4 H 10 .
12 . The substrate cleaning apparatus of claim 8 , further comprising an accelerating gas supply unit configured to supply an accelerating gas for accelerating the gas clusters,
wherein the acceleration gas is mixed with the cluster generating gas and the mixed gas is supplied to the cluster nozzle.
13 . The substrate cleaning apparatus of claim 12 , wherein the accelerating gas is H 2 or He.
14 . The substrate cleaning apparatus of claim 8 , wherein a size of the gas clusters is controlled by a supply pressure of the cluster generating gas or the mixed gas, a supply temperature of the cluster generating gas or the mixed gas, or an orifice diameter of the cluster nozzle.
15 . A method of selecting a cluster generating gas in supplying a cluster generating gas to a cluster nozzle at a predetermined pressure, injecting the cluster generating gas from the cluster nozzle into a processing chamber accommodating a target substrate and maintained in a vacuum state, and removing particles of the target object by irradiating gas clusters generated by adiabatic expansion of the cluster generating gas onto the target substrate,
wherein the cluster generating gas is selected based on a product Φ of energy K per molecule or atom of the cluster generating gas injected from the cluster nozzle that is expressed by the following equation (1) and an index C indicating the ease with which the gas forms clusters that is expressed by the following equation (2),
K
=
1
2
mv
2
=
γ
γ
-
1
k
B
T
0
(
1
)
where k B represents a Boltzmann constant; γ represents a specific heat ratio of the cluster generating gas; m represents a mass of the cluster generating gas; v represents a speed of the cluster generating gas; and T 0 represents a gas supply temperature, and
C
=
(
T
b
T
0
)
γ
γ
-
1
(
2
)
where T b represents a boiling point of the cluster generating gas; T 0 represents a gas supply temperature; and γ represents a specific heat ratio of the cluster generating gas.
16 . The method of selecting a cluster generating gas of claim 15 , wherein a gas having a value of Φ greater than Φ of CO 2 gas is selected.Join the waitlist — get patent alerts
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