Semiconductor structure with substantially straight contact profile

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a semiconductor structure with a substantially straight contact profile and methods of manufacture. The structure includes a block material comprising an upper oxidized layer at an interface with an insulating material; and an interconnect contact structure with a substantially straight profile through the oxidized layer of the block material.

1 . A structure, comprising:
 a block material comprising an upper oxidized layer at an interface with an insulating material, the insulating material and the oxidized layer having substantially a same etching rate regardless of a thickness of the oxidized layer; and   an interconnect contact structure with a substantially straight profile through the oxidized layer of the block material, the interconnect contact structure extending through the insulating material and contacting an underlying wiring structure,   wherein the substantially straight profile is substantially 90 degrees as measured relative to a horizontal surface of the underlying wiring structure.   
     
     
         2 . (canceled) 
     
     
         3 . The structure of  claim 1 , wherein the insulating material is a dielectric material composed of SiCOH. 
     
     
         4 . The structure of  claim 1 , wherein the oxidized layer is about 20% to 30% of a thickness of the block material. 
     
     
         5 . (canceled) 
     
     
         6 . (canceled) 
     
     
         7 . The structure of  claim 1 , wherein the block material is composed of nitride material. 
     
     
         8 . The structure of  claim 1 , wherein the block material is composed of nitrogen-doped silicon carbide. 
     
     
         9 . The structure of  claim 8 , wherein the insulating layer is bulk SiCOH. 
     
     
         10 . A structure comprising:
 a wiring layer formed in an insulator material;   a low-k dielectric block material comprising an upper surface composed of oxidized material;   an interlevel dielectric material directly on the upper surface, the interlevel dielectric material and the oxidized material of the low-k dielectric block material having substantially a same etching rate regardless of a thickness of the oxidized material; and   a contact extending to the wiring layer, through the block material, oxidized material and the interlevel dielectric material, the contact having a substantially straight profile within the oxidized material, the contact structure extending through the interlevel dielectric material and contacting the wiring layer,   wherein the substantially straight profile is substantially 90 degrees as measured relative to a horizontal surface of the wiring layer.   
     
     
         11 . The structure of  claim 10 , wherein the interlevel dielectric material is composed of bulk SiCOH. 
     
     
         12 . The structure of  claim 10 , wherein the oxidized material is about 20% to 30% of a thickness of the block material. 
     
     
         13 . The structure of  claim 10 , wherein the interlevel dielectric material and the oxidized material have substantially a same etching rate. 
     
     
         14 . The structure of  claim 13 , wherein the low-k dielectric block material is composed of nitride material. 
     
     
         15 . The structure of  claim 14 , wherein the low-k dielectric block material is composed of nitrogen-doped silicon carbide. 
     
     
         16 . The structure of  claim 14 , wherein the oxidized material has a thickness of about 12 nm to 25 nm. 
     
     
         17 .- 20 . (canceled) 
     
     
         21 . The structure of  claim 1 , wherein the block material is a low-k dielectric material that covers insulating material and partially covers an upper surface of the underlying wiring structure. 
     
     
         22 . The structure of  claim 21 , wherein the interconnect contact is tungsten and the insulating material is an oxide material. 
     
     
         23 . The structure of  claim 22 , wherein the underlying wiring structure is a copper material.