Inventor · disambiguated record
Robert Seidel
Also filed as: SEIDEL ROBERT · SEIDEL ROBERT V · SEIDEL ROBERT VIKTOR
28 granted patents·10 pending applications·153 citations·filing 1996–2023
95Inventor score
Top patents by PatentIndex Score
38 records- 0190US8344474B2Microstructure device including a metallization structure with self-aligned air gaps and refilled air gap exclusion zonesADVANCED MICRO DEVICES INC·Filed 2010·Granted Jan 1, 2013·12 cites·21 claims
- 0290US7928004B2Nano imprint technique with increased flexibility with respect to alignment and feature shapingADVANCED MICRO DEVICES INC·Filed 2007·Granted Apr 19, 2011·16 cites·6 claims
- 0387US10644099B1Three-dimensional (3D) metal-insulator-metal capacitor (MIMCAP) and methodGLOBALFOUNDRIES INC·Filed 2018·Granted May 5, 2020·5 cites·21 claims
- 0486US8048796B2Microstructure device including a metallization structure with self-aligned air gaps formed based on a sacrificial materialGLOBALFOUNDRIES INC·Filed 2010·Granted Nov 1, 2011·9 cites·16 claims
- 0585US7646045B2Method for fabricating a nanoelement field effect transistor with surrounded gate structureQIMONDA AG·Filed 2008·Granted Jan 12, 2010·20 cites·19 claims
- 0683US8293641B2Nano imprint technique with increased flexibility with respect to alignment and feature shapingSEIDEL ROBERT·Filed 2011·Granted Oct 23, 2012·6 cites·6 claims
- 0783US7425487B2Method for fabricating a nanoelement field effect transistor with surrounded gate structureQIMONDA AG·Filed 2006·Granted Sep 16, 2008·19 cites·22 claims
- 0880US7745327B2Method of forming a copper-based metallization layer including a conductive cap layer by an advanced integration regimeADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 29, 2010·13 cites·18 claims
- 0978US8883610B2Microstructure device including a metallization structure with self-aligned air gaps between closely spaced metal linesSEIDEL ROBERT·Filed 2009·Granted Nov 11, 2014·8 cites·11 claims
- 1078US8420533B2Metallization system of a semiconductor device comprising rounded interconnects formed by hard mask roundingSEIDEL ROBERT·Filed 2010·Granted Apr 16, 2013·4 cites·20 claims
- 1175US8314494B2Metal cap layer of increased electrode potential for copper-based metal regions in semiconductor devicesNOPPER MARKUS·Filed 2009·Granted Nov 20, 2012·9 cites·19 claims
- 1272US8319259B2Semiconductor power switch having nanowiresKREUPL FRANZ·Filed 2005·Granted Nov 27, 2012·5 cites·17 claims
- 1368US7875514B2Technique for compensating for a difference in deposition behavior in an interlayer dielectric materialADVANCED MICRO DEVICES INC·Filed 2010·Granted Jan 25, 2011·2 cites·13 claims
- 1467US8039398B2Method of reducing non-uniformities during chemical mechanical polishing of excess metal in a metallization level of microstructure devicesGLOBALFOUNDRIES INC·Filed 2007·Granted Oct 18, 2011·2 cites·22 claims
- 1565US8198190B2Semiconductor device and method for patterning vertical contacts and metal lines in a common etch processRICHTER RALF·Filed 2008·Granted Jun 12, 2012·3 cites·16 claims
- 1662US7326465B2Integrated electronic componentINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 5, 2008·2 cites·6 claims
- 1755US9478602B2Method of forming an embedded metal-insulator-metal (MIM) capacitorGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 25, 2016·0 cites·7 claims
- 1855US8338314B2Technique for reducing topography-related irregularities during the patterning of a dielectric material in a contact level of closely spaced transistorsRICHTER RALF·Filed 2009·Granted Dec 25, 2012·0 cites·16 claims
- 1954US2024203868A1Serial directed self-assembly (dsa) processes for forming metal layer with cutINTEL CORP·Filed 2022·Application pending·0 cites
- 2054US2025220968A1Integrated circuit structures having direct-assembled links for uniform grid metal gate and trench contact cutINTEL CORP·Filed 2023·Application pending·0 cites
- 2153US8664657B2Electrical circuit with a nanostructure and method for producing a contact connection of a nanostructureDUESBERG GEORG·Filed 2005·Granted Mar 4, 2014·2 cites·22 claims
- 2253US6245174B1Heat recoverable articleFiled 1996·Granted Jun 12, 2001·16 cites·3 claims
- 2352US7785956B2Technique for compensating for a difference in deposition behavior in an interlayer dielectric materialADVANCED MICRO DEVICES INC·Filed 2008·Granted Aug 31, 2010·0 cites·17 claims
- 2452US2009181537A1Semiconductor structure comprising an electrical connection and method of forming the sameADVANCED MICRO DEVICES INC·Filed 2009·Application pending·0 cites
- 2550US11127683B2Semiconductor structure with substantially straight contact profileGLOBALFOUNDRIES US INC·Filed 2019·Granted Sep 21, 2021·0 cites·19 claims
- 2650US9685497B2Embedded metal-insulator-metal capacitorGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 20, 2017·0 cites·14 claims
- 2750US8163594B2Semiconductor device comprising a carbon-based material for through hole viasSEIDEL ROBERT·Filed 2009·Granted Apr 24, 2012·0 cites·16 claims
- 2850US2008265426A1Semiconductor structure comprising an electrical connection and method of forming the sameSEIDEL ROBERT·Filed 2007·Application pending·0 cites
- 2950US2013095648A1Technique for reducing topography-related irregularities during the patterning of a dielectric material in a contact level of closely spaced transistorsADVANCED MICRO DEVICES INC·Filed 2012·Application pending·0 cites
- 3048US2019157213A1Semiconductor structure with substantially straight contact profileGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 3147US8741770B2Semiconductor device and method for patterning vertical contacts and metal lines in a common etch processRICHTER RALF·Filed 2012·Granted Jun 3, 2014·0 cites·4 claims
- 3247US2010052175A1Reducing leakage and dielectric breakdown in dielectric materials of metallization systems of semiconductor devices by forming recessesSEIDEL ROBERT·Filed 2009·Application pending·0 cites
- 3347US2023402555A1Reflective semiconductor device with mirror elements having two oxide layers over aluminum layer, and related methodGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2022·Application pending·0 cites
- 3444US2008182409A1Method of forming a metal layer over a patterned dielectric by electroless deposition using a selectively provided activation layerSEIDEL ROBERT·Filed 2007·Application pending·0 cites
- 3543US9287109B2Methods of forming a protection layer to protect a metal hard mask layer during lithography reworking processesGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 15, 2016·0 cites·20 claims
- 3643US2008003826A1Method for increasing the planarity of a surface topography in a microstructureWERNER THOMAS·Filed 2007·Application pending·0 cites
- 3742US8580684B2Contact elements of semiconductor devices comprising a continuous transition to metal lines of a metallization layerSEIDEL ROBERT·Filed 2010·Granted Nov 12, 2013·0 cites·17 claims
- 3839US8389401B2Contact elements of semiconductor devices formed on the basis of a partially applied activation layerSEIDEL ROBERT·Filed 2010·Granted Mar 5, 2013·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →