Semiconductor device and manufacturing method thereof

Abstract

The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

1 - 39 . (canceled) 
     
     
         40 . A semiconductor device comprising:
 a semiconductor substrate having a device isolation region formed by LOCOS method;   a first insulating film formed over said semiconductor substrate and having a wiring opening;   a wiring embedded in the wiring opening;   a second insulating film formed on said wiring and the first insulating film; and   a third insulating film formed on the second insulating film.