Heating method for a reactor for epitaxial deposition and reactor for epitaxial deposition

Abstract

The present invention relates to a heating method for a reactor ( 1 ) for epitaxial deposition; the reactor ( 1 ) comprises a susceptor ( 2 ) and an inductor ( 4 ); the inductor ( 4 ) is adapted to heat the susceptor ( 2 ) by electromagnetic induction when it is electrically powered; the inductor ( 4 ) comprises a plurality of turns ( 41 - 47 ); during heating of the susceptor ( 2 ) from a first temperature to a second temperature, the position of one or more turns ( 43 ) of the inductor ( 4 ) with respect to the susceptor ( 2 ) and to the other turns of the inductor ( 4 ) is changed. The turns ( 43 ) are actuated by means of an appropriate actuation system ( 61,62, 63 ).

1 . Heating method for a reactor for epitaxial deposition;
 wherein the reactor comprises a susceptor and an inductor;   wherein the inductor is adapted to heat the susceptor by electromagnetic induction when electrically powered;   wherein the inductor comprises a plurality of turns;   wherein, during heating of the susceptor from a first temperature to a second temperature, before an epitaxial deposition process, the position of at least one first turn of the inductor with respect to said susceptor and with respect to other turns of the inductor is changed.   
     
     
         2 . Heating method according to  claim 1 , wherein, during heating of the susceptor from a first temperature to a second temperature, before an epitaxial deposition process, the position of at least one second turn of the inductor with respect to said susceptor and with respect to other turns of the inductor is changed. 
     
     
         3 . Heating method according to  claim 1 , wherein, during heating of the susceptor from said first temperature to said second temperature, before an epitaxial deposition process, the position of said at least one turn and/or of said at least one second turn is changed repeatedly. 
     
     
         4 . Heating method according to  claim 1 , wherein, during heating of the susceptor from a first temperature to a second temperature, before an epitaxial deposition process, the position of said at least one turn and/or of said at least one second turn is changed through an open loop control. 
     
     
         5 . Heating method according to  claim 1 , wherein, during the heating of the susceptor from a first temperature to a second temperature, before an epitaxial deposition process, said inductor is electrically powered through an open loop control. 
     
     
         6 . Heating method according to  claim 1 , wherein, during an epitaxial deposition process, the position of none of the turns ( 41 - 48 ) of said inductor is changed. 
     
     
         7 . Heating method according to  claim 1 , wherein, during an epitaxial deposition process, said inductor is electrically powered through a closed loop control. 
     
     
         8 . Heating method according to  claim 1 , wherein said first temperature corresponds to a loading temperature of an epitaxial deposition process, and/or wherein said second temperature corresponds to a process temperature of an epitaxial deposition process. 
     
     
         9 . Heating method according to  claims 8 , wherein, in at least one temperature interval between said first temperature and said second temperature, the position of none of the turns of said inductor is changed. 
     
     
         10 . Reactor for epitaxial deposition comprising at least one susceptor with a disk-like portion adapted to directly or indirectly support one or more substrates, and an inductor with turns adapted to heat said disk-like portion and to be controlled by changing the position of the turns, the reactor comprising:
 a first motor adapted to change the position of at least one first turn of said inductor as a result of its motion,   a first plurality of translating actuators adapted to act on a corresponding plurality of points ( FIG. 3 ) of said at least one first turn and causing translations thereof, and   a first transmission adapted to transmit the motion of said first motor ( 61 ) to said first plurality of actuators.   
     
     
         11 . Reactor for epitaxial deposition according to  claim 10 , comprising:
 a second motor adapted to change the position of at least one second turn of said inductor as a result of its motion,   a second plurality of translating actuators adapted to act on a corresponding plurality of points ( FIG. 3 ) of said at least one second turn and causing translations thereof, and   a second transmission adapted to transmit the motion of said second motor to said second plurality of actuators.   
     
     
         12 . Reactor for epitaxial deposition according to  claim 10 , wherein said first transmission and/or said second transmission consists of one and/or two belts or chains. 
     
     
         13 . Reactor for epitaxial deposition according to  claim 10 , wherein said inductor comprises a continuous conductor in a single elastic mechanical piece. 
     
     
         14 . Reactor for epitaxial deposition according to claim from  10 , comprising potentiometers used to detect rotations of said actuators. 
     
     
         15 . Reactor for epitaxial deposition adapted to implement the heating method according to claim from  1  and comprising at least one motor ( 61 ), at least one plurality of actuators ( 62 ) and at least one transmission ( 63 ).