Semiconductor structure and manufacturing method thereof

Abstract

A semiconductor structure includes a first dielectric layer; a first conductive member extended through and surrounded by the first dielectric layer; a first protective layer disposed over the first dielectric layer and the first conductive member; a second dielectric layer disposed over the first protective layer; a third dielectric layer disposed over the second dielectric layer; and a second conductive member disposed over the first dielectric layer and the first conductive member, and surrounded by the first protective layer, the second dielectric layer and the third dielectric layer, wherein the second conductive member includes a first portion and a second portion disposed over and coupled with the first portion, the first portion is extended through and surrounded by the first protective layer and the second dielectric layer, the second portion is surrounded by the third dielectric layer.

1 . A semiconductor structure, comprising:
 a first dielectric layer;   a first conductive member extended through and surrounded by the first dielectric layer;   a first protective layer disposed over the first dielectric layer and the first conductive member;   a second dielectric layer disposed over the first protective layer;   a third dielectric layer disposed over the second dielectric layer; and   a second conductive member disposed over the first dielectric layer and the first conductive member, and surrounded by the first protective layer, the second dielectric layer and the third dielectric layer,   wherein the second conductive member includes a first portion and a second portion disposed over and coupled with the first portion, the first portion is extended through and surrounded by the first protective layer and the second dielectric layer, the second portion is surrounded by the third dielectric layer, at least a portion of the second dielectric layer is disposed between the first protective layer and the second portion of the second conductive member.   
     
     
         2 . The semiconductor structure of  claim 1 , wherein a first width of the first portion of the second conductive member is substantially less than a second width of the second portion of the second conductive member. 
     
     
         3 . The semiconductor structure of  claim 1 , wherein at least a portion of the second portion of the second conductive member is protruded from the first portion of the second conductive member. 
     
     
         4 . The semiconductor structure of  claim 1 , wherein the second portion of the second conductive member is tapered towards the first portion of the second conductive member. 
     
     
         5 . The semiconductor structure of  claim 1 , wherein the first portion of the second conductive member is tapered towards the first conductive member. 
     
     
         6 . The semiconductor structure of  claim 1 , wherein the first portion of the second conductive member is disposed above the first conductive member. 
     
     
         7 . The semiconductor structure of  claim 1 , wherein the first portion of the second conductive member is disposed above the first conductive member and the first dielectric layer. 
     
     
         8 . The semiconductor structure of  claim 1 , further comprising a second protective layer disposed between the second dielectric layer and the third dielectric layer, wherein the second protective layer surrounds the second portion of the second conductive member. 
     
     
         9 . The semiconductor structure of  claim 8 , wherein the first protective layer and the second protective layer include nitride. 
     
     
         10 . The semiconductor structure of  claim 1 , wherein the second conductive member includes a third portion surrounded by the third dielectric layer, disposed over and coupled with the second portion of the second conductive member. 
     
     
         11 . The semiconductor structure of  claim 10 , wherein a third width of the third portion of the second conductive member is substantially greater than a first width of the first portion of the second conductive member and a second width of the second portion of the second conductive member. 
     
     
         12 . A semiconductor structure, comprising:
 a first dielectric layer;   a first conductive member extended through and surrounded by the first dielectric layer;   a first protective layer disposed over the first dielectric layer and the first conductive member;   a second dielectric layer disposed over the first protective layer;   a second protective layer disposed over the second dielectric layer;   a third dielectric layer disposed over the second dielectric layer;   a second conductive member disposed over the first dielectric layer and the first conductive member, and surrounded by the first protective layer, the second dielectric layer, the second protective layer and the third dielectric layer; and   a third conductive member disposed over the second conductive member and surrounded by the third dielectric layer,   wherein the second conductive member includes a first portion and a second portion disposed over and coupled with the first portion, the first portion is extended through and surrounded by the first protective layer and the second dielectric layer, the second portion is surrounded by the third dielectric layer, at least a portion of the second dielectric layer is disposed between the first protective layer and the second portion of the second conductive member.   
     
     
         13 . The semiconductor structure of  claim 12 , wherein a curved interface is disposed between the second portion of the second conductive member and the third conductive member. 
     
     
         14 . The semiconductor structure of  claim 12 , wherein the second portion of the second conductive member includes a convex surface curving towards the third conductive member. 
     
     
         15 . The semiconductor structure of  claim 12 , wherein the third conductive member includes a concave surface curving away from the second conductive member. 
     
     
         16 . The semiconductor structure of  claim 12 , wherein the second portion of the second conductive member is protruded from the first portion of the second conductive member in a length of about 3 Å to about 150 Å. 
     
     
         17 . The semiconductor structure of  claim 12 , further comprising a barrier layer surrounding the third conductive member, disposed over the second portion of the second conductive member and separating the third conductive member from the second conductive member. 
     
     
         18 . A method of manufacturing a semiconductor structure, comprising:
 providing a first dielectric layer and a first conductive member surrounded by the first dielectric layer;   disposing a first protective layer over the first dielectric layer and the first conductive member;   disposing a second dielectric layer over the first protective layer;   disposing a second protective layer over the second dielectric layer;   disposing a third dielectric layer over the second protective layer;   removing a first portion of the third dielectric layer to form a first opening;   removing a first portion of the second protective layer exposed by the first opening;   removing a second portion of the third dielectric layer to form a second opening;   removing a first portion of the second dielectric layer exposed from the second protective layer to form a third opening;   removing a portion of the first protective layer exposed by the third opening and a second portion of the second protective layer exposed by the second opening; and   disposing a conductive material into the second opening and the third opening to form a second conductive member.   
     
     
         19 . The method of  claim 18 , wherein a first width of the first opening is substantially less than a second width of the second opening, and the first width is substantially the same as a third width of the third opening. 
     
     
         20 . The method of  claim 18 , wherein a second portion of the second dielectric layer is exposed by the second opening after the removal of the second portion of the second protective layer.