Anodic Bonding of a Substrate of Glass having Contact Vias to a Substrate of Silicon

Abstract

Anodic bonding method are disclosed. In one embodiment, an anodic bonding method may include: (1) providing a first substrate ( 100 ) having a semiconductor material; (2) providing a second substrate ( 200 ) having a bondable passivation material and contact vias ( 210 ); (3) contacting the first substrate and the second substrate ( 100, 200 ); (4) providing a resistance layer ( 300, 220 ) on the second substrate ( 200 ); and (5) applying a potential between the resistance layer and the first substrate.

1 - 82 . (canceled) 
     
     
         83 . An anodic bonding method, comprising the steps of:
 providing a first substrate ( 100 ) having a semiconductor material;   providing a second substrate ( 200 ) having a bondable passivation material and contact vias ( 210 );   contacting the first substrate and the second substrate ( 100 ,  200 );   providing a resistance layer ( 300 ,  220 ) on the second substrate ( 200 ); and   applying a potential between the resistance layer and the first substrate.   
     
     
         84 . The anodic bonding method according to claim  1  wherein the bondable passivation material is provided as an alkaline glass material having an adapted thermal expansion coefficient, when providing the second substrate ( 200 ). 
     
     
         85 . The anodic bonding method according to claim  1 , wherein the providing of the resistance layer comprises creating at least one portion ( 220 ) of the resistance layer during the production of the second substrate ( 200 ). 
     
     
         86 . The anodic bonding method according to  claim 84 , wherein the providing of the resistance layer further comprises providing a third substrate that includes a further portion of the resistance layer and a conductive material. 
     
     
         87 . The anodic bonding method according to  claim 85 , wherein an upper electrode ( 3 ;  4 ) is insulated in order to avoid a short circuit between the electrode and the contact vias ( 210 ). 
     
     
         88 . The anodic bonding method according to  claim 87 , wherein an electrode wafer ( 300 ) is produced that has an insulating layer ( 320 ) on one side, said side facing the second substrate. 
     
     
         89 . The anodic bonding method according to  claim 88 , wherein one or more of the following steps are given:
 the insulating layer ( 320 ) comprises SiO 2  or Si 3 N 4 ;   the electrode wafer ( 300 ) is made of silicon;   the second substrate comprises or is a glass wafer.   
     
     
         90 . The anodic bonding method according to  claim 85 , wherein an upper electrode ( 3 ;  4 ) is insulated in a manner avoiding a short circuit between the electrode and the contact vias ( 210 ), and the electrode wafer ( 300 ) is made of silicon;
 the electrode wafer ( 300 ) comprises an insulating layer ( 320 ) including at least SiO 2  or Si 3 N 4  on a side facing the second substrate, as a glass wafer.   
     
     
         91 . The anodic bonding method according to  claim 87 , wherein the silicon wafer is contacted from a backside thereof via a lower electrode ( 2 ), or from a front side thereof through a recess ( 5   a ′). 
     
     
         92 . The anodic bonding method according to  claim 91 , wherein the recess ( 5   a ′) is located in an electrode wafer, and an edge pin ( 5 ) is used for contacting. 
     
     
         93 . The anodic bonding method according to  claim 91 , comprising the use of wafers having a high conductivity due to doping. 
     
     
         94 . The anodic bonding method according to  claim 91 , comprising the use of Si wafers. 
     
     
         95 . The anodic bonding method according to  claim 87 , wherein only a comparatively thin insulating layer ( 320 ) is provided. 
     
     
         96 . The anodic bonding method according to  claim 83 , wherein the providing of the resistance layer comprises contacting a third substrate ( 300 ) to the second substrate ( 200 ) in order to at least indirectly mechanically contact the contact vias ( 210 ) to the third substrate. 
     
     
         97 . The anodic bonding method according to  claim 96 , wherein the third substrate ( 300 ) comprises a barrier layer ( 320 ) that is brought into direct mechanical contact with the contact vias ( 210 ), said barrier layer inhibiting at least a diffusion of oxygen. 
     
     
         98 . The anodic bonding method according to  claim 97 , wherein the third substrate ( 300 ) comprises a potential compensation layer ( 310 ) made of a material containing a metal. 
     
     
         99 . The anodic bonding method according to  claim 86 , wherein the third substrate ( 300 ) comprises a potential compensation layer ( 310 ) containing at least a metal. 
     
     
         100 . The anodic bonding method according to  claim 83 , wherein, when contacting is performed from above only, the second substrate ( 200 ) comprises a recess ( 5   a ′) enabling access to a surface of the first substrate ( 100 ) to be bonded when applying the potential. 
     
     
         101 . The anodic bonding method according to  claim 83 , wherein contacting is performed from above only, and
 the second substrate ( 200 ) comprises a recess ( 5   a ′),   the recess provides access for applying the potential,   the first substrate ( 100 ) comprises the surface to be bonded,   the potential is applied to the surface of the first substrate to be bonded.   
     
     
         102 . The anodic bonding method according to  claim 83 , wherein not more than two wafers are contacted and thus bonded via an upper bonding plate and a lower bonding plate ( 3 ,  2 ).